STPS20L40CFP

STPS20L40C Low drop power Schottky rectifier Main product characteristics A1 K IF(AV) VRRM Tj (max) VF(max) 2 x 10 A 40 V 150° C 0.5 V A2 Features and benefits ■ ■ ■ A2 K A1 Low forward voltage drop meaning very small conduction losses Low dynamic losses as a result of the schottky barrier Insulated package: TO-220FPAB insulating voltage = 200 V DC capacitance = 12 pF Avalanche capability specified TO-220FPAB STPS20L40CFP ■ Description Dual center tap Schottky rectifiers designed for high frequency switched mode power supplies and DC to DC converters. These devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. March 2007 Rev 5 1/7 www.st.com 7 Characteristics STPS20L40C 1 Characteristics Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt 1. d Ptot --------------dTj Absolute Ratings (limiting values) Parameter Repetitive peak reverse voltage RMS forward voltage Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature (1) Critical rate of rise of reverse voltage Tc = 115° C Per diode δ = 0.5 Per device tp = 10 ms Sinusoidal tp = 2 µs square F = 1 kHz tp = 100 µs square tp = 1 µs Tj = 25°C Value 40 30 10 20 180 1 2 4000 -65 to + 150 150 10000 Unit V A A A A A W °C °C V/µs < 1 ------------------------Rth ( j – a ) condition to avoid thermal runaway for a diode on its own heatsink Table 2. Symbol Rth(j-c) Thermal resistances Parameter Junction to case Per diode Total Coupling Value 4.5 3.5 2.5 Unit °C/W When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c). Table 3. Symbol IR(1) Static electrical characteristics (per diode) Parameter Reverse leakage current Test Conditions Tj = 25° C Tj = 100° C Tj = 25° C VR = VRRM I F = 10 A I F = 10 A I F = 20 A I F = 20 A 0.62 0.44 Min. Typ. Max. 0.7 15 35 0.55 0.5 V 0.73 0.72 Unit mA mA VF(1) Forward voltage drop Tj = 125° C Tj = 25° C Tj = 125° C 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.28 x IF(AV) + 0.022 IF2(RMS) 2/7 STPS20L40C Characteristics Figure 1. Average forward power Figure 2. dissipation versus average forward current (per diode) IF(AV)(A) δ = 0.1 12 Average forward current versus ambient temperature (δ = 0.5, per diode) PF(AV)(W) 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 T δ = 0.2 δ = 0.05 δ = 0.5 11 10 9 8 7 6 5 4 3 2 tp T Rth(j-a)=Rth(j-c) δ=1 Rth(j-a)=15°C/W IF(AV)(A) δ=tp/T 1 0 0 δ=tp/T 25 tp Tamb(°C) 50 75 100 125 150 Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature PARM(tp) PARM(1µs) 1 1.2 1 0.1 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 PARM(tp) PARM(25°C) 0.01 tp(µs) 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration IM(A) 100 90 80 70 60 50 40 30 20 10 0 1E-3 IM t Zth(j-c)/Rth(j-c) 1.0 0.8 TC=25°C 0.6 δ = 0.5 TC=50°C 0.4 δ = 0.2 δ = 0.1 TC=100°C T 0.2 δ=0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-3 tp(s) Single pulse δ=tp/T 1E+0 tp 1E-2 1E-1 1E+1 3/7 Characteristics STPS20L40C Figure 7. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8. Junction capacitance versus reverse voltage applied (typical values, per diode) IR(mA) 2E+2 1E+2 C(pF) 2000 Tj=150°C Tj=125°C F=1MHz VOSC=30mVRMS Tj=25°C 1E+1 Tj=75°C 1000 1E+0 1E-1 Tj=25°C 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 VR(V) 100 1 2 5 10 20 50 Figure 9. Forward voltage drop versus forward current (maximum values) (per diode) IFM(A) 100.0 Tj=150°C (typical values) Tj=125°C 10.0 Tj=25°C 1.0 Tj=75°C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 4/7 STPS20L40C Package Information 2 Package Information ● ● ● ● Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm Maximum torque value: 0.70 Nm TO-220FPAB dimensions Dimensions Ref Millimeters Min. A A H B Table 4. Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 B D E Dia L6 L2 L3 L5 F1 L4 F2 D L7 F F1 F2 G G1 H L2 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 E L3 L4 G L5 L6 L7 Dia. In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STPS20L40C 3 Ordering information Delivery mode Tube Ordering type STPS20L40CFP Marking STPS20L40CFP Package TO-220FPAB Weight 2g Base qty 50 4 Revision history Date Jul_2003 26-Mar-2007 Revision 4B 5 Last release. Removed ISOWATT, TO-220AB and TO-247 packages. Description of Changes 6/7 STPS20L40C Please Read Carefully: Information in this document is provided solely in connection with ST products. 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