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STPS20L45C

STPS20L45C

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STPS20L45C - Low drop power Schottky rectifier - STMicroelectronics

  • 数据手册
  • 价格&库存
STPS20L45C 数据手册
STPS20L45C Low drop power Schottky rectifier Main product characteristics IF(AV) VRRM Tj (max) VF(max) A1 K A2 2 x 10 A 45 V 150° C 0.5 V Features and benefits ■ ■ ■ A2 K A1 K A1 A2 Low forward voltage drop meaning very small conduction losses Low switching losses allowing high frequency operation Insulated package: TO-220FPAB Insulating voltage = 2000 V DC Capacitance = 12 pF Avalanche capability specified TO-220FPAB STPS20L45CFP TO-220AB STPS20L45CT K ■ A2 A1 Description Dual center tap Schottky rectifiers designed for high frequency switched mode power supplies and DC to DC converters. These devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. D2PAK STPS20L45CG March 2007 Rev 4 1/9 www.st.com 9 Characteristics STPS20L45C 1 Characteristics Table 1. Symbol VRRM IF(RMS) Absolute Ratings (limiting values) Parameter Repetitive peak reverse voltage RMS forward voltage Average forward current Tc =135° C TO-220AB / D2PAK δ = 0.5 TO-220FPAB Per diode Per device Value 45 30 10 20 10 20 180 1 2 4000 -65 to + 150 150 10000 Unit V A A A A A A IF(AV) Tc = 115° C Per diode δ = 0.5 Per device tp = 10 ms Sinusoidal tp = 2 µs square F = 1 kHz tp = 100 µs square tp = 1 µs Tj = 25°C IFSM IRRM IRSM PARM Tstg Tj dV/dt 1. d Ptot --------------dTj Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range W °C °C V/µs Maximum operating junction temperature (1) Critical rate of rise of reverse voltage < 1 ------------------------Rth ( j – a ) condition to avoid thermal runaway for a diode on its own heatsink Table 2. Symbol Rth(j-c) Thermal resistances Parameter Junction to case TO-220FPAB Per diode Total Coupling Per diode Total Coupling Value 4.5 3.5 2.5 2.2 1.3 0.3 Unit °C/W Rth(j-c) Junction to case TO-220AB / D2PAK °C/W When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c). Table 3. Symbol IR(1) Static electrical characteristics (per diode) Parameter Reverse leakage current Test Conditions Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C VR = VRRM I F = 10 A I F = 10 A I F = 20 A I F = 20 A 0.62 0.44 Min. Typ. Max. 0.2 65 130 0.55 0.5 0.73 0.72 V Unit mA mA VF(1) Forward voltage drop 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.28 x IF(AV) + 0.022 IF2(RMS) 2/9 STPS20L45C Characteristics Figure 1. Average forward power Figure 2. dissipation versus average forward current (per diode) IF(AV)(A) 12 Average forward current versus ambient temperature (δ = 0.5, per diode) PF(AV)(W) 8 δ = 0.1 δ = 0.2 7 6 5 δ = 0.05 δ = 0.5 11 10 9 8 Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) TO-220AB / TO-247 TO-220FPAB δ=1 7 6 5 4 T 4 3 2 1 3 2 1 0 T IF(AV)(A) 0 0 2 4 6 8 10 δ=tp/T 12 tp δ=tp/T 0 25 tp Tamb(°C) 50 75 100 125 150 14 Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature PARM(tp) PARM(1µs) 1 1.2 1 0.1 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 PARM(tp) PARM(25°C) 0.01 tp(µs) 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values, per diode, TO-220AB, D2PAK) Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values, per diode, TO-220FPAB) IM(A) 140 120 100 80 TC=25°C IM(A) 100 90 80 70 60 Tj=25°C 50 40 30 TC=50°C 60 40 IM TC=75°C TC=125°C t 20 10 IM t TC=100°C 20 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 δ=0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 3/9 Characteristics STPS20L45C Figure 7. Relative variation of thermal Figure 8. impedance junction to case versus pulse duration (TO-220AB, D2PAK) 1.0 Relative variation of thermal impedance junction to case versus pulse duration ( TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 Zth(j-c)/Rth(j-c) 0.8 δ = 0.5 0.8 0.6 0.6 δ = 0.5 0.4 δ = 0.2 δ = 0.1 0.4 δ = 0.2 T 0.2 Single pulse 0.2 δ = 0.1 T tp(s) 1E-2 1E-1 0.0 1E-3 δ=tp/T tp Single pulse tp(s) 1E-2 1E-1 1E+0 0.0 1E-3 δ=tp/T 1E+ 0 tp 1E+ 1 Figure 9. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 2000 IR(mA) 2E+2 1E+2 Tj=150°C F=1MHz VOSC=30mVRMS Tj=25°C 1E+1 Tj=125°C 1000 Tj=75°C 1E+0 1E-1 Tj=25°C 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 100 1 2 5 VR(V) 10 20 50 Figure 11. Forward voltage drop versus forward current (maximum values, per diode) Figure 12. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)( D2PAK) Rth(j-a)(°C/W) 80 IFM(A) 100.0 Tj=150°C (typical values) 70 60 10.0 Tj=125°C 50 Tj=25°C 40 30 1.0 Tj=75°C 20 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 0 5 10 15 S(Cu)(cm²) 20 25 30 35 40 4/9 STPS20L45C Package information 2 Package information ● ● ● ● Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm Maximum torque value: 0.70 Nm TO-220FPAB dimensions Dimensions Ref Millimeters Min. A A H B Table 4. Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 B D E Dia L6 L2 L3 L5 F1 L4 F2 D L7 F F1 F2 G G1 H L2 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 E L3 L4 G L5 L6 L7 Dia. 5/9 Package information Table 5. TO-220AB dimensions STPS20L45C Dimensions Ref Millimeters Min. A H2 Dia L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 4.40 C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 6/9 STPS20L45C Table 6. D2PAK dimensions Package information Dimensions Ref Millimeters Min. A A E L2 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 A1 C2 A2 B D L L3 A1 B2 B G A2 B2 C C2 C R D E G L M * V2 L2 L3 M R V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0° 8° 0.016 typ. 0° 8° Figure 13. Footprint (dimensions in millimeters) 16.90 10.30 1.30 5.08 8.90 3.70 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering Information STPS20L45C 3 Ordering Information Delivery mode Tube Tube Tube Tape & Reel Ordering type STPS20L45CFP STPS20L45CT STPS20L45CG STPS20L45CG-TR Marking STPS20L45CFP STPS20L45CT STPS20L45CG STPS20L45CG Package TO-220FPAB TO-220AB D PAK D2PAK 2 Weight 2g 2g 1.48 g 1.48 g Base qty 50 50 50 1000 4 Revision history Date Jul_2003 22-Mar-2007 Revision 3C 4 Last release. Removed ISOWATT and TO-247 packages. Description of Changes 8/9 STPS20L45C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9
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