STPS20LCD80CB
High voltage power Schottky rectifier
Datasheet - production data
Description
A1
This dual diode Schottky rectifier is suited for
high frequency switched mode power supplies.
K
A2
Packaged in DPAK, this device is intended to be
used in high density converters, providing these
applications with a good efficiency at both low
and high load.
K
K
Table 1: Device summary
A1
A1
A2
A2
DPA K
Features
Symbol
Value
IF(AV)
2 x 10 A
VRRM
80 V
Tj (max)
175 °C
VF (typ)
0.66 V
High junction temperature capability
Good trade-off between leakage current and
forward voltage drop
Low leakage current
Avalanche capability specified
ECOPACK®2 compliant component for
DPAK on demand
September 2017
DocID024228 Rev 2
This is information on a product in full production.
1/9
www.st.com
Characteristics
1
STPS20LCD80CB
Characteristics
Table 2: Absolute ratings (limiting values, per diode, at Tamb 25 °C, unless otherwise stated)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
80
V
IF(RMS)
Forward rms current
20
A
Average forward current δ = 0.5,
square wave
Per diode
TC = 145 °C
10
IF(AV)
Per device
TC = 140 °C
20
Surge non repetitive forward current
tp = 10 ms sinusoidal
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
IFSM
PARM(1)
Tstg
A
125
Storage temperature range
230
W
-65 to + 175
°C
+ 175
°C
Maximum operating junction temperature (2)
Tj
A
Notes:
(1)For
pulse time duration derating, please refer to Figure 3: "Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)". More details regarding the avalanche energy measurements and diode
validation in the avalanche are provided in the application notes AN1768 and AN2025.
(2)(dP
tot/dTj)
< (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameter
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Value
Per diode
3.20
Total
1.95
0.70
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
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DocID024228 Rev 2
Unit
°C/W
°C/W
STPS20LCD80CB
Characteristics
Table 4: Static electrical characteristics (per diode)
Symbol
IR(1)
Parameter
Test conditions
Reverse leakage current
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
VF(2)
Forward voltage drop
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 10 A
IF = 20 A
Min.
Typ.
Max.
Unit
-
3.2
15
µA
-
2.8
8
mA
-
0.815
0.880
-
0.660
0.710
-
1.030
1.160
-
0.765
0.865
V
Notes:
(1)Pulse
test: tp = 5 ms, δ < 2%
(2)Pulse
test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.555 x IF(AV) + 0.0155 IF2(RMS)
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Characteristics
1.1
STPS20LCD80CB
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus ambient
temperature (δ = 0.5, per diode)
IF(A V) (A)
P F(AV)(W)
12
10
δ = 0.2
δ = 0.1
δ = 0.05
9
δ= 1
δ = 0.5
R th(j - a) = Rth(j - c)
11
10
8
9
7
8
6
7
5
6
4
5
4
3
3
T
2
2
1
IF(A V) (A)
δ =tp/T
0
0
1
2
3
4
5
6
7
8
9
10
0
11
12
13
Figure 3: Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
1
Tamb (°C)
1
tp
0
25
50
75
100
125
150
175
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
PARM (t p )
PARM (10 µs)
Zth(j-c) / Rth(j-c)
1.0
0.9
0.8
0.7
0.1
0.6
0.5
0.4
0.01
Single pulse
0.3
0.2
t p (µs)
0.1
0.001
1
10
100
1000
0.0
1.E-04
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
1.E+05 IR(µA)
1.E-03
1.E-02
1.E-01
1.E+00
Figure 6: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
1.E+04
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj = 150 °C
Tj = 125 °C
1.E+03
Tj = 100 °C
1.E+02
100
Tj = 75 °C
Tj = 50 °C
1.E+01
Tj = 25 °C
1.E+00
VR (V)
1.E-01
10
0
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10
20
30
40
50
60
70
80
DocID024228 Rev 2
1
10
100
STPS20LCD80CB
Characteristics
Figure 7: Thermal resistance junction to ambient
versus copper surface under tab
Figure 8: Forward voltage drop versus forward
current (per diode)
IFM (A)
20
18
Tj=125°C
(Maximum values)
16
14
12
Tj=125°C
(Typical values)
10
8
Tj=25°C
(Maximum values)
6
4
2
VFM (V)
0
0.0
DocID024228 Rev 2
0.2
0.4
0.6
0.8
1.0
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1.2
Package information
2
STPS20LCD80CB
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1
Cooling method: by conduction (C)
Epoxy meets UL 94,V0
DPAK package information
Figure 9: DPAK package outline
This package drawing may slightly differ from the physical package. However, all
the specified dimensions are guaranteed.
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DocID024228 Rev 2
Package information
STPS20LCD80CB
Table 5: DPAK package mechanical data
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.18
2.40
0.085
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
b
0.64
0.90
0.025
0.035
b4
4.95
5.46
0.194
0.215
c
0.46
0.61
0.018
0.024
c2
0.46
0.60
0.018
0.023
D
5.97
6.22
0.235
0.244
D1
4.95
5.60
0.194
0.220
E
6.35
6.73
0.250
0.265
E1
4.32
5.50
0.170
0.216
e
2.286 typ.
0.090 typ.
e1
4.40
4.70
0.173
0.185
H
9.35
10.40
0.368
0.409
L
1.0
1.78
0.039
0.070
L2
1.27
0.050
L4
0.60
1.02
0.023
0.040
V2
-8°
+8°
-8°
+8°
Figure 10: DPAK recommended footprint (dimensions in mm)
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Ordering information
3
STPS20LCD80CB
Ordering information
Table 6: Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPS20LCD80CB-TR
S20LC D80C
DPAK
0.32 g
2500
Tape and reel
Revision history
Table 7: Document revision history
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Date
Revision
Changes
07-Jan-2015
1
First full version, consolidating the previous internal release of march
2013. Updated the DPAK package information.
27-Sep-2017
2
Updated description in cover page.
Minor text changes.
DocID024228 Rev 2
STPS20LCD80CB
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DocID024228 Rev 2
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