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STPS20LCD80CB-TR

STPS20LCD80CB-TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-252

  • 描述:

    DIODE SCHOTTKY 80V DPAK

  • 数据手册
  • 价格&库存
STPS20LCD80CB-TR 数据手册
STPS20LCD80CB High voltage power Schottky rectifier Datasheet - production data Description A1 This dual diode Schottky rectifier is suited for high frequency switched mode power supplies. K A2 Packaged in DPAK, this device is intended to be used in high density converters, providing these applications with a good efficiency at both low and high load. K K Table 1: Device summary A1 A1 A2 A2 DPA K Features      Symbol Value IF(AV) 2 x 10 A VRRM 80 V Tj (max) 175 °C VF (typ) 0.66 V High junction temperature capability Good trade-off between leakage current and forward voltage drop Low leakage current Avalanche capability specified ECOPACK®2 compliant component for DPAK on demand September 2017 DocID024228 Rev 2 This is information on a product in full production. 1/9 www.st.com Characteristics 1 STPS20LCD80CB Characteristics Table 2: Absolute ratings (limiting values, per diode, at Tamb 25 °C, unless otherwise stated) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 80 V IF(RMS) Forward rms current 20 A Average forward current δ = 0.5, square wave Per diode TC = 145 °C 10 IF(AV) Per device TC = 140 °C 20 Surge non repetitive forward current tp = 10 ms sinusoidal Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C IFSM PARM(1) Tstg A 125 Storage temperature range 230 W -65 to + 175 °C + 175 °C Maximum operating junction temperature (2) Tj A Notes: (1)For pulse time duration derating, please refer to Figure 3: "Normalized avalanche power derating versus pulse duration (Tj = 125 °C)". More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. (2)(dP tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameter Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value Per diode 3.20 Total 1.95 0.70 When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) 2/9 DocID024228 Rev 2 Unit °C/W °C/W STPS20LCD80CB Characteristics Table 4: Static electrical characteristics (per diode) Symbol IR(1) Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 10 A IF = 20 A Min. Typ. Max. Unit - 3.2 15 µA - 2.8 8 mA - 0.815 0.880 - 0.660 0.710 - 1.030 1.160 - 0.765 0.865 V Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.555 x IF(AV) + 0.0155 IF2(RMS) DocID024228 Rev 2 3/9 Characteristics 1.1 STPS20LCD80CB Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode) IF(A V) (A) P F(AV)(W) 12 10 δ = 0.2 δ = 0.1 δ = 0.05 9 δ= 1 δ = 0.5 R th(j - a) = Rth(j - c) 11 10 8 9 7 8 6 7 5 6 4 5 4 3 3 T 2 2 1 IF(A V) (A) δ =tp/T 0 0 1 2 3 4 5 6 7 8 9 10 0 11 12 13 Figure 3: Normalized avalanche power derating versus pulse duration (Tj = 125 °C) 1 Tamb (°C) 1 tp 0 25 50 75 100 125 150 175 Figure 4: Relative variation of thermal impedance junction to case versus pulse duration PARM (t p ) PARM (10 µs) Zth(j-c) / Rth(j-c) 1.0 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 Single pulse 0.3 0.2 t p (µs) 0.1 0.001 1 10 100 1000 0.0 1.E-04 Figure 5: Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+05 IR(µA) 1.E-03 1.E-02 1.E-01 1.E+00 Figure 6: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 1.E+04 F=1MHz VOSC=30mVRMS Tj=25°C Tj = 150 °C Tj = 125 °C 1.E+03 Tj = 100 °C 1.E+02 100 Tj = 75 °C Tj = 50 °C 1.E+01 Tj = 25 °C 1.E+00 VR (V) 1.E-01 10 0 4/9 10 20 30 40 50 60 70 80 DocID024228 Rev 2 1 10 100 STPS20LCD80CB Characteristics Figure 7: Thermal resistance junction to ambient versus copper surface under tab Figure 8: Forward voltage drop versus forward current (per diode) IFM (A) 20 18 Tj=125°C (Maximum values) 16 14 12 Tj=125°C (Typical values) 10 8 Tj=25°C (Maximum values) 6 4 2 VFM (V) 0 0.0 DocID024228 Rev 2 0.2 0.4 0.6 0.8 1.0 5/9 1.2 Package information 2 STPS20LCD80CB Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.   2.1 Cooling method: by conduction (C) Epoxy meets UL 94,V0 DPAK package information Figure 9: DPAK package outline This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. 6/9 DocID024228 Rev 2 Package information STPS20LCD80CB Table 5: DPAK package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 2.18 2.40 0.085 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 4.95 5.46 0.194 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.60 0.018 0.023 D 5.97 6.22 0.235 0.244 D1 4.95 5.60 0.194 0.220 E 6.35 6.73 0.250 0.265 E1 4.32 5.50 0.170 0.216 e 2.286 typ. 0.090 typ. e1 4.40 4.70 0.173 0.185 H 9.35 10.40 0.368 0.409 L 1.0 1.78 0.039 0.070 L2 1.27 0.050 L4 0.60 1.02 0.023 0.040 V2 -8° +8° -8° +8° Figure 10: DPAK recommended footprint (dimensions in mm) DocID024228 Rev 2 7/9 Ordering information 3 STPS20LCD80CB Ordering information Table 6: Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPS20LCD80CB-TR S20LC D80C DPAK 0.32 g 2500 Tape and reel Revision history Table 7: Document revision history 8/9 Date Revision Changes 07-Jan-2015 1 First full version, consolidating the previous internal release of march 2013. Updated the DPAK package information. 27-Sep-2017 2 Updated description in cover page. Minor text changes. DocID024228 Rev 2 STPS20LCD80CB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID024228 Rev 2 9/9
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