STPS20S100CFP

STPS20S100C Datasheet 100 V power Schottky rectifier Features • • • • High junction temperature capability for converters located in confined environment Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier Avalanche specification • ECOPACK®2 compliant A1 K A2 K A1 K A2 K A1 A2 TO-220AB TO-220FPAB Applications • • • • • Switching diode SMPS DC/DC converter LED lighting Desktop power supply Description Schottky barrier rectifier designed for high frequency miniature switched mode power supplies such as adaptors and on board DC/DC converters. The STPS20S100C is housed in TO-220AB and TO-220FPAB packages. Product status link STPS20S100C Product summary Symbol Value IF(AV) 2 x 10 A VRRM 100 V Tj 175 °C VF (typ.) 0.66 V DS4269 - Rev 3 - May 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS20S100C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 30 A TO-220AB IF(AV) Average forward current TO-220FPAB Tc = 155 °C, δ = 0.5 Per diode 10 Tc = 150 °C, δ = 0.5 Per device 20 Tc = 135 °C, δ = 0.5 Per diode 10 Tc = 115 °C, δ = 0.5 Per device 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 518 W -65 to +175 °C 175 °C Tstg Tj Storage temperature range Maximum operating junction temperature(1) 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Max. value TO-220AB Rth(j-c) Junction to case TO-220FPAB Rth(c) Coupling Per diode 2.2 Total 1.3 Per diode 4.5 Total 3.5 TO-220AB 0.3 TO-220FPAB 2.5 Unit °C/W When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 3. Static electrical characteristics (per diode) Symbol IR(1) DS4269 - Rev 3 Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C VR = VRRM Min. Typ. - 1.3 Max. Unit 3.5 µA 4.5 mA page 2/12 STPS20S100C Characteristics Symbol Parameter Test conditions Tj = 25 °C Tj = 125 °C VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 5 A IF = 10 A IF = 20 A Min. Typ. - 0.57 0.61 0.85 0.66 - Unit 0.73 - Max. 0.71 V 0.94 0.74 0.80 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.62 x IF(AV) + 0.009 x IF2(RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS4269 - Rev 3 page 3/12 STPS20S100C Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) 10 PF(AV)(W) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) 11 δ = 0.05 9 δ = 0.5 δ = 0.2 δ = 0.1 δ=1 IF(AV) (A) Rth(j-a) = Rth(j-c) 10 TO-220AB 9 8 8 7 TO-220FPAB 7 6 6 5 Rth(j-a) = 15 °C/W 5 4 4 3 3 T 2 T 2 1 IF(AV)(A) δ=tp/T 1 tp 0 δ=tp/T tp T amb (°C) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) 1 PARM (t p ) PARM (10 µs) 0 25 50 75 100 125 150 175 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB) 1.0 Zth(j-c) /Rth(j-c) TO-220AB 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 0.2 0.1 t p(µs) 0.001 1 DS4269 - Rev 3 10 100 1000 Single pulse 0.0 1.E-03 t P(s) 1.E-02 1.E-01 1.E+00 page 4/12 STPS20S100C Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) 1.0 Zth (j-c) /Rth (j-c) Figure 6. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+01 IR(mA) Tj = 150 °C TO-220FPAB 0.9 1.E+00 0.8 Tj = 125 °C 0.7 Tj = 100 °C 1.E-01 0.6 0.5 Tj = 75 °C 0.4 1.E-02 Tj = 50 °C 0.3 0.2 1.E-03 Tj = 25 °C 0.1 t P(s) Single pulse 0.0 1.E-03 VR(V) 1.E-04 1.E-02 1.E-01 1.E+00 1.E+01 Figure 7. Junction capacitance versus reverse voltage applied (typical values, per diode) 1000 C(pF) 0 10 20 30 40 50 60 70 80 90 100 Figure 8. Forward voltage drop versus forward current (per diode) 100 IF (A) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C Tj = 125 °C (Maximum values) 100 Tj = 25 °C (Maximum values) Tj = 125 °C (Typical values) 10 VR(V) VF (V) 10 1 1 DS4269 - Rev 3 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 page 5/12 STPS20S100C Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220FPAB package information • • • • Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.70 N·m Figure 9. TO-220FPAB package outline A B H Dia L6 L2 L7 L3 L5 F1 L4 D F2 F G1 E G DS4269 - Rev 3 page 6/12 STPS20S100C TO-220FPAB package information Table 4. TO-220FPAB package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1.00 0.03 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 0.106 H 10.00 10.40 0.393 0.409 L2 DS4269 - Rev 3 Inches 16.00 typ. 0.63 typ. L3 28.60 30.60 1.126 1.205 L4 9.80 10.60 0.386 0.417 L5 2.90 3.60 0.114 0.142 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia 3.00 3.20 0.118 0.126 page 7/12 STPS20S100C TO-220AB package information 2.2 TO-220AB package information • • • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.70 N·m Figure 10. TO-220AB package outline Table 5. TO-220AB package mechanical data Dimensions Ref. DS4269 - Rev 3 Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.240 0.035 b1 1.14 1.55 0.045 0.061 page 8/12 STPS20S100C TO-220AB package information Dimensions Ref. Millimeters Min. Max. Min. Max. c 0.48 0.70 0.019 0.028 D 15.25 15.75 0.600 0.620 D1 DS4269 - Rev 3 Inches 1.27 typ. 0.050 typ. E 10.00 10.40 0.394 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.260 J1 2.40 2.72 0.094 0.107 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L20 16.40 typ. 0.646 typ. L30 28.90 typ. 1.138 typ. θP 3.75 3.85 0.148 0.152 Q 2.65 2.95 0.104 0.116 page 9/12 STPS20S100C Ordering information 3 Ordering information Table 6. Ordering information DS4269 - Rev 3 Order code Marking Package Weight STPS20S100CT STPS20S100CT TO-220AB 1.95 g STPS20S100CFP STPS20S100CFP TO-220FPAB 1.90 g Base qty. Delivery mode 50 Tube page 10/12 STPS20S100C Revision history Table 7. Document revision history Date Version Changes 16-Mar-2005 1 First issue. 03-Feb-2010 2 Added cathode indicator K to illustration of TO-220AB on cover page. Changed parameter in Table 2 from “ RMS forward voltage “ to “ Forward rms current “. Removed figure 4, figure 5 and figure 6. 11-May-2018 3 Updated Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C), Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode), Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB) and Figure 5. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB). Updated Section 3 Ordering information. Removed I²PAK package. Minor text changes to improve readability. DS4269 - Rev 3 page 11/12 STPS20S100C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS4269 - Rev 3 page 12/12