STPS2L25U

® STPS2L25U LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2A 25 V 150 °C 0.375 V FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS SMB JEDEC DO-214AA DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB (JEDEC DO214-AA), this device is especially intended for use in parallel with MOSFETs in synchronous rectification. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 125°C δ = 0.5 tp = 10 ms Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square Parameter Repetitive peak reverse voltage Value 25 10 2 75 1 1 - 65 to + 150 150 10000 Unit V A A A A A °C °C V/µs dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj 1/4 June 1999 - Ed: 3A STPS2L25U THERMAL RESISTANCES Symbol Rth(j-l) Junction to lead Parameter Value 25 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min. Typ. 15 Max. 90 30 0.45 Unit µA mA V VR = VRRM IF = 2 A IF = 4 A 0.43 0.325 0.375 0.53 0.51 To evaluate the maximum conduction losses use the following equation : P = 0.24 x IF(AV) + 0.068 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 1.2 1.0 0.8 δ=1 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Average forward current versus ambient temperature (δ=0.5). 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF(av)(A) Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W 0.6 0.4 0.2 tp δ=tp/T IF(av) (A) 0.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 T T δ=tp/T tp Tamb(°C) 50 75 100 125 150 0 25 2/4 STPS2L25U Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 10 9 8 7 6 5 4 3 2 IM 1 0 1E-3 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.0 0.8 Ta=25°C 0.6 Ta=50°C δ = 0.5 0.4 Ta=100°C δ = 0.2 T 0.2 t δ = 0.1 Single pulse δ=0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E+1 0.0 1E-2 δ=tp/T tp 1E-1 1E+0 1E+2 5E+2 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1E+2 Tj=150°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 F=1MHz Tj=25°C 1E+1 1E+0 1E-1 1E-2 1E-3 Tj=125°C Tj=100°C 100 Tj=25°C VR(V) 0 5 10 15 20 25 VR(V) 10 1 2 5 10 20 30 Fig. 7: Forward voltage drop versus forward current (maximum values). Fig. 8: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) IFM(A) 10.00 Typical values Tj=150°C 120 100 1.00 Tj=125°C 80 Tj=25°C Tj=100°C 60 40 20 0.10 VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 S(Cu) (cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/4 STPS2L25U PACKAGE MECHANICAL DATA SMB DIMENSIONS REF. E1 Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c E A1 E1 C L A2 D b L FOOT PRINT DIMENSIONS (in millimeters) 2.3 1.52 2.75 1.52 Ordering type STPS2L25U Marking G23 Package SMB Weight 0.107g Base qty 2500 Delivery mode Tape & reel Band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4