®
STPS2L60
POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS
■ ■ ■ ■
2A 60 V 150°C 0.55 V SMA (JEDEC DO-214AC) STPS2L60A DO-41 STPS2L60
Negligible switching losses Low forward voltage drop Surface mount miniature package Avalanche capability specified
DESCRIPTION Axial and Surface Mount Power Schottky rectifiers suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMA and DO-41, this device is especially intended for use in low voltage, high frequency inverters and small battery chargers.
Table 2: Order Codes Part Number STPS2L60A STPS2L60 STPS2L60RL
Marking S26 STPS2L60 STPS2L60
Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM PARM Tstg Tj dV/dt Average forward current SMA DO-41 TL = 115°C δ = 0.5 TL = 110°C δ = 0.5 tp = 10ms sinusoidal tp = 1µs Tj = 25°C Value 60 10 2 75 1600 -65 to + 150 150 10000 Unit V A A A W °C °C V/µs
Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range
Maximum operating junction temperature * Critical rate of rise of reverse voltage
dPt ot 1 * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j – a )
August 2004
REV. 3
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Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter Lead length = 10 mm SMA DO-41 Value 25 30 Unit °C/W
Table 5: Static Electrical Characteristics Symbol IR * Tests conditions Tj = 25°C VR = VRRM Reverse leakage current Tj = 100°C Tj = 25°C VF ** Forward voltage drop Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test: * tp = 380 µs, δ < 2%
Parameter
Min.
Typ 2 0.51 0.62
Max. 100 10 0.60 0.55 0.77 0.67
Unit µA mA
IF = 2 A IF = 4 A
V
To evaluate the conduction losses use the following equation: P = 0.43 x IF(AV) + 0.06 IF (RMS)
2
Figure 1: Average forward power dissipation versus average forward current
PF(AV)(W)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Figure 2: Average forward current versus ambient temperature (δ = 0.5)
IF(AV)(A)
2.2
Rth(j-a)=Rth(j-I)
δ = 0.1 δ = 0.05
δ = 0.2
δ = 0.5
2.0 1.8
DO-41
δ=1
1.6
SMA
1.4 1.2
Rth(j-a)=100°C/W
1.0 0.8
T
0.6 0.4
T
IF(AV)(A)
δ=tp/T
tp
0.2 0.0 0
δ=tp/T
25
tp
50
Tamb(°C)
75 100 125 150
Figure 3: Normalized avalanche derating versus pulse duration
PARM(tp) PARM(1µs)
1
power
Figure 4: Normalized avalanche derating versus junction temperature
PARM(tp) PARM(25°C)
1.2 1
power
0.1
0.8 0.6 0.4 0.2
0.01
0.001 0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 25 50 75 100 125 150
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Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA)
IM(A)
10 9 8 7 6
Ta=25°C
Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (DO-41)
IM(A)
10 9 8 7
Ta=25°C
6 5
Ta=75°C Ta=75°C
5 4 3 2 1 0 1.E-03 1.E-02 1.E-01 1.E+00
IM t
4 3
Ta=125°C
2 1 0 1.E-03
IM t
Ta=125°C
δ=0.5
t(s)
δ=0.5
t(s)
1.E-02 1.E-01 1.E+00
Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMA)
Zth(j-a)/Rth(j-a)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
δ = 0.2 δ = 0.1 Single pulse δ = 0.5
Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41)
Zth(j-a)/Rth(j-a)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3
δ = 0.5
T
0.2 0.1
δ = 0.2 δ = 0.1
T
tp(s)
δ=tp/T
tp
Single pulse
tp(s)
1.E+01
δ=tp/T
1.E+02
tp
1.E+03
0.0 1.E-01 1.E+00
Figure 9: Reverse leakage current versus reverse voltage applied (typical values)
IR(µA)
1.E+05
Tj=150°C
Figure 10: Junction capacitance versus reverse voltage applied (typical values)
C(pF)
1000
F=1MHz VOSC=30mV Tj=25°C
1.E+04
Tj=125°C Tj=100°C
1.E+03
Tj=75°C
100
1.E+02
Tj=50°C
1.E+01
Tj=25°C
VR(V)
1.E+00 0 10 20 30 40 50 60 10 1
VR(V)
10 100
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Figure 11: Forward voltage drop versus forward current (maximum values, low level) Figure 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMA)
Rth(j-)(°C/W)
130
Tj=125°C (maximum values)
IFM(A)
10 9 8 7 6 5 4 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tj=125°C (typical values) Tj=25°C (maximum values)
120 110 100 90 80 70 60 50 40 30 20
VFM(V)
10 0 0.0 0.5 1.0 1.5
S(Cu)(cm²)
2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 13: Thermal resistance versus lead length (DO-41)
Rth(°C/W)
120
Rth(j-a)
100
80
60
Rth(j-I)
40
20
Lleads(mm)
0 5 10 15 20 25
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Figure 14: SMA Package Mechanical Data DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60
Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063
D
A1 A2 b
1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75
E
c
A1
E E1
b
C L
A2
D L
Figure 15: SMA Foot Print Dimensions (in millimeters)
1.65
1.45
2.40
1.45
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Figure 16: DO-41 Package Mechanical Data
C A
C
/ OB
OD /
OD /
REF. A B C D Table 6: Ordering Information Ordering type STPS2L60A STPS2L60 STPS2L60RL
■ ■
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.07 5.20 0.160 0.205 2.04 2.71 0.080 0.107 28 1.102 0.712 0.863 0.028 0.034
Marking S26 STPS2L60 STPS2L60
Package SMA DO-41 DO-41
Weight 0.068 g 0.34 g 0.34 g
Base qty 5000 2000 5000
Delivery mode Tape & reel Ammopack Tape & reel
Band indicates cathode Epoxy meets UL94, V0
Table 7: Revision History Date Jul-2003 Aug-2004 Revision 2A 3 Description of Changes Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080).
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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