STPS30170CW

STPS30170C High voltage power Schottky rectifier Datasheet - production data Features A1 K   A2    Description A2 TO-247 High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current Avalanche capability specified ECOPACK®2 compliant component for D²PAK on demand K Dual center tap Schottky rectifier designed for high frequency switch mode power supply. A1 Table 1: Device summary K K A2 A2 A1 A1 D2PAK May 2017 DocID11640 Rev 2 This is information on a product in full production. Symbol Value IF(AV) 2 x 15 A VRRM 170 V Tj (max) 175 °C VF (typ) 0.69 V 1/13 www.st.com Characteristics 1 STPS30170C Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5, square wave TC = 150 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 220 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 750 W -65 to +175 °C +175 °C Tstg 15 Per device 30 Storage temperature range Maximum operating junction temperature Tj Per diode A (1) Notes: (1)(dP tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameter Symbol Parameter Max. value D2PAK TO-247 Rth(j-c) Junction to case Unit 1.6 Per diode 1.5 °C/W D2PAK 0.95 Total TO-247 0.9 D2PAK Rth(c) Coupling TO-247 Coupling When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) 2/13 DocID11640 Rev 2 0.3 °C/W STPS30170C Characteristics Table 4: Static electrical characteristics (per diode) Symbol IR(1) Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 15 A IF = 30 A Min. Typ. - 5 - Unit 20 µA 20 mA 0.92 0.69 - Max. 0.75 1 0.8 V 0.86 Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.0073 IF2(RMS) DocID11640 Rev 2 3/13 Characteristics 1.1 STPS30170C Characteristics (curves) Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode) Figure 1: Average forward power dissipation versus average forward current (per diode) IF(AV)(A) 18 P F (AV ) (W ) 14 =0.2 =0.1 12 =1 =0.5 16 =0.05 14 10 12 8 10 6 8 Rth(j-a)=15 °C/W 6 4 T T 4 2 tp =tp/T IF( AV) (A) 2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1 Tamb(°C) 0 0 Figure 3: Normalized avalanche power derating versus pulse duration (Tj = 125 °C) tp =tp/T 0 25 50 75 100 125 150 175 Figure 4: Relative variation of thermal impedance junction to case versus pulse duration (D²PAK and TO-247) Zth(j-c) /Rth(j-c) PARM(t p ) PARM(10 µs) 1.0 0.9 0.8 0.7 0.1 =0.5 0.6 0.5 0.01 0.4 =0.2 0.3 =0.1 T 0.2 t p (µs) 0.001 Single pulse 0.1 1 10 100 1000 0.0 1.E-03 Figure 5: Reverse leakage current versus reverse voltage applied (typical values, per diode) =tp/T t P(s) 1.E-02 tp 1.E+00 1.E-0 Figure 6: Junction capacitance versus reverse voltage applied (typical values, per diode) IR(µA) C(pF) 1.E+06 1000 1.E+05 F=1MHz VOSC =30mVRMS Tj =25°C Tj=175°C Tj=150°C 1.E+04 Tj=125°C 1.E+03 100 1.E+02 Tj=75°C 1.E+01 Tj=25°C 1.E+00 V R (V) V R(V) 1.E-01 0 4/13 10 10 20 30 40 50 60 70 80 90 10 0 11 0 12 0 13 0 140 15 0 16 0 170 DocID11640 Rev 2 1 10 100 1000 STPS30170C Characteristics Figure 7: Forward voltage drop versus forward current (per diode, low level) 15.0 Figure 8: Forward voltage drop versus forward current (per diode, high level) IF (A) IF (A) 100 12.5 Tj=125°C (Maximum values) Tj=125°C (Maximum values) 10.0 7.5 Tj=125°C (Typical values) Tj=125°C (Typical values) 10 Tj=25°C (Maximum values) 5.0 Tj=25°C (Maximum values) 2.5 VF (V) VF (V) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 9: Thermal resistance junction to ambient versus copper surface under tab for D²PAK (typical values) 80 Rth(j-a) (°C/W) 70 60 50 40 30 20 Epoxy printed board FR4, eCU= 35 µm 10 SCu(cm²) 0 0 5 10 15 20 DocID11640 Rev 2 25 30 35 40 5/13 1.6 Package information 2 STPS30170C Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     6/13 Cooling method: by conduction (C) Epoxy meets UL 94,V0 Recommended torque values: 0.55 N·m (for TO-247) Maximum torque values: 1.0 N·m maximum (for TO-247) DocID11640 Rev 2 STPS30170C 2.1 Package information D²PAK package information Figure 10: D²PAK package outline This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. DocID11640 Rev 2 7/13 Package information STPS30170C Table 5: D²PAK package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.36 4.60 0.172 0.181 A1 0.00 0.25 0.000 0.010 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.38 0.69 0.015 0.027 c2 1.19 1.36 0.047 0.053 D 8.60 9.35 0.339 0.368 D1 6.90 8.00 0.272 0.311 D2 1.10 1.50 0.043 0.060 E 10.00 10.55 0.394 0.415 E1 8.10 8.90 0.319 0.346 E2 6.85 7.25 0.266 0.282 e 2.54 typ. 0.100 e1 4.88 5.28 0.190 0.205 H 15.00 15.85 0.591 0.624 J1 2.49 2.90 0.097 0.112 L 1.90 2.79 0.075 0.110 L1 1.27 1.65 0.049 0.065 L2 1.30 1.78 0.050 0.070 R V2 8/13 Inches 0.4 typ. 0° 0.015 8° DocID11640 Rev 2 0° 8° STPS30170C Package information Figure 11: D²PAK recommended footprint (dimensions in mm) DocID11640 Rev 2 9/13 Package information 2.2 STPS30170C TO-247 package information Figure 12: TO-247 package outline 0075325_8 10/13 DocID11640 Rev 2 STPS30170C Package information Table 6: TO-247 package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D(1) 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 5.45 18.50 0.215 0.220 0.728 ØP(2) 3.55 3.65 0.139 0.143 ØR 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 5.50 0.216 0.224 Notes: (1)Dimension (2)Resin D plus gate protusion does not exceed 20.5 mm thickness around the mounting hole is not less than 0.9 mm. DocID11640 Rev 2 11/13 Ordering information 3 STPS30170C Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPS30170CW STPS30170CW TO-247 4.40g 30 Tube STPS30170CG-TR STPS30170CG D2PAK 1.48g 1000 Tape and reel Revision history Table 8: Document revision history Date Revision 16-Sep-2005 1 First issue. 2 Updated features, package silhouette and Table 1: "Device summary". Updated Section 1: "Characteristics", Section 1.1: "Characteristics (curves)", Section 2: "Package information" and Table 7: "Ordering information". 16-May-2017 12/13 Changes DocID11640 Rev 2 STPS30170C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID11640 Rev 2 13/13