STPS30H100CT

STPS30H100CW/CT ® HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) K 2 x 15 A VRRM 100 V Tj (max) 175 °C VF (max) 0.67 V A2 FEATURES AND BENEFITS ■ ■ ■ ■ ■ A2 NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED K A1 A1 K A2 TO-220AB STPS30H100CT TO-247 STPS30H100CW DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) RMS forward current 30 A 15 30 A 250 A IF(AV) Average forward current Tc = 155°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 3 A PARM Repetitive peak avalanche power tp = 1µs 10800 W - 65 to + 175 °C 175 °C 10000 V/µs Tstg Tj dV/dt * : Storage temperature range Per diode Per device Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 5E 1/5 STPS30H100CW/CT THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Rth (c) Value Unit Per diode Total 1.6 0.9 °C/W Coupling 0.1 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions IR * Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 125°C VF ** Pulse test : Forward voltage drop Typ. 2 Tj = 25°C IF = 15 A Tj = 125°C IF = 15 A Tj = 25°C IF = 30 A Tj = 125°C IF = 30 A 0.64 Max. Unit 5 µA 6 mA 0.80 V 0.67 0.93 0.74 0.80 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.54 x IF(AV) + 0.0086 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode). PF(av)(W) IF(av)(A) 14 δ = 0.1 12 δ = 0.2 δ = 0.5 δ = 0.05 10 δ=1 8 6 T 4 2 0 δ=tp/T IF(av) (A) 0 2/5 2 4 6 8 10 12 14 16 tp 18 20 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T δ=tp/T 0 25 tp Tamb(°C) 50 75 100 125 150 175 STPS30H100CW/CT Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 240 220 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3 0 1000 25 50 75 100 125 150 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 Tc=25°C Tc=75°C 0.4 δ = 0.5 δ = 0.2 T δ = 0.1 Tc=150°C t 0.2 Single pulse t(s) δ=0.5 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-4 δ=tp/T tp(s) 1E-3 1E-2 tp 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) IR(mA) 1000 2E+0 1E+0 Tj=125°C F=1MHz Tj=25°C 1E-1 500 1E-2 1E-3 200 Tj=25°C 1E-4 VR(V) VR(V) 1E-5 0 10 20 30 40 50 60 70 80 90 100 100 1 2 5 10 20 50 100 3/5 STPS30H100CW/CT Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 200 100 Tj=125°C Tj=25°C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Min. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = ■ ■ ■ = COOLING METHOD: C RECOMMENDED TORQUE VALUE: 0.8 N.M. MAXIMUM TORQUE VALUE: 1 N.M. 4/5 Millimeters E Typ. Max. Inches Min. Typ. Max. A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 STPS30H100CW/CT PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 F M G1 E G 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. Diam. ■ Inches 3.75 0.102 typ. 3.85 0.147 0.151 Ordering type Marking Package Weight Base qty Delivery mode STPS30H100CW STPS30H100CW TO-247 4.36g 30 Tube STPS30H100CT STPS30H100CT TO-220AB 2.20 g 50 Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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