STPS30L30C

STPS30L30C Low drop power Schottky rectifier Features ■ ■ ■ ■ ■ ■ A1 K A2 K K Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Low thermal resistance Avalanche capability specified A1 A2 K A2 A1 D2PAK STPS30L30CG Description This dual center tap Schottky rectifier is suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB, D2PAK and I2PAK, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Table 1. Device summary IF(AV) VRRM Tj (max) VF(typ) 2 x 15 A 30 V 150 °C 0.37 V TO-220AB STPS30L30CT A2 A1 I2PAK STPS30L30CR K Figure 1. V I Electrical characteristics (a) I "Forward" 2 x IO IF X VRRM VR VAR IO X V IR VTo VF(Io) VF VF(2xIo) "Reverse" IAR a. VARM and IARM must respect the reverse safe operating area defined in Figure 12 VAR and IAR are pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics April 2010 Doc ID 5506 Rev 6 1/9 www.st.com 9 Characteristics STPS30L30C 1 Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM (1) Characteristics Absolute ratings (limiting values per diode) Parameter Repetitive peak reverse voltage Forward rms current Average forward current δ = 0.5 Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Maximum repetitive peak avalanche voltage Maximum single pulse peak avalanche voltage Storage temperature range Maximum operating junction temperature (3) Critical rate of rise of reverse voltage Tc = 140 °C, tp = 10 ms sinusoidal, tp = 2 µs square, F= 1 kHz square tp = 100 µs square tp = 1 µs Tj = 25 °C tp < 1 µs Tj < 150 °C IAR < 35 A tp < 1 µs Tj < 150 °C IAR < 35 A Per diode Per device Value 30 30 15 30 220 1 3 5300 45 45 -65 to + 175 150 10000 Unit V A A A A A W V V °C °C V/µs VARM (2) VASM (2) Tstg Tj dV/dt 1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. Refer to Figure 12 3. dPtot --------------dTj 1 < -------------------------- condition to avoid thermal runaway for a diode on its own heatsink Rth ( j – a ) Table 3. Symbol Rth(j-c) Rth(c) Thermal resistance(1) Parameter Junction to case Coupling Per diode Total Value 1.5 0.8 0.1 Unit °C/W 1. When the diodes 1 and 2 are used simultaneously: Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4. Symbol IR(1) Static electrical characteristics (per diode) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 15 A IF = 30A Min. Typ. Max. 1.5 170 0.33 0.43 350 0.46 0.37 0.57 0.5 V Unit mA mA VF(1) Forward voltage drop 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.24 x IF(AV) + 0.009 x IF2(RMS) 2/9 Doc ID 5506 Rev 6 STPS30L30C Characteristics Figure 2. Average forward power dissipation Figure 3. versus average forward current (per diode) IF(av)(A) 16 δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 Average forward current per diode versus ambient temperature (δ = 0.5) 10 9 8 7 6 5 4 3 2 1 0 PF(av)(W) 14 12 10 δ=1 Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) 8 6 T Rth(j-a)=50°C/W T 4 tp IF(av) (A) 0 2 4 6 8 10 12 14 δ=tp/T 2 δ=tp/T tp Tamb(°C) 50 75 100 125 150 16 18 20 0 0 25 Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus junction temperature P ARM (t p ) P ARM (1µs) 1 1.2 1 P ARM (T j ) P ARM (25°C) 0.1 0.8 0.6 0.01 0.4 0.2 0.001 t p (µs) T j (°C) 0 0.01 0.1 1 10 100 1000 25 50 75 100 125 150 Figure 6. Non repetitive surge peak forward current versus overload duration, (maximum values per diode) Figure 7. Relative variation of thermal impedance junction to case versus pulse duration IM(A) 250 225 200 175 150 125 100 75 50 IM 25 0 1E-3 Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=25°C Tc=75°C Tc=110°C 0.6 0.4 δ = 0.5 δ = 0.2 T 0.2 t δ = 0.1 δ=0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-4 Single pulse tp(s) 1E-3 1E-2 δ=tp/T tp 1E-1 1E+0 Doc ID 5506 Rev 6 3/9 Characteristics STPS30L30C Figure 8. Reverse leakage current versus reverse voltage applied (typical values per diode) Figure 9. Junction capacitance versus reverse voltage applied (typical values per diode) IR(mA) 1E+3 Tj=150°C C(nF) 5.0 F=1MHz Tj=25°C 1E+2 Tj=125°C 1E+1 1E+0 Tj=25°C 1.0 1E-1 1E-2 VR(V) 0 5 10 15 20 25 30 0.1 VR(V) 1 2 5 10 20 50 Figure 10. Forward voltage drop versus forward current (maximum values per diode) IFM(A) 200 100 Tj=15 0 °C (typical values) Figure 11. Thermal resistance junction to ambient versus copper surface under tab Rth(j-a) (°C/W) 80 70 60 50 Epoxy printed circuit board, copper thickness = 35 µm D2PAK Tj=12 5 °C 10 Tj=25 °C 40 30 20 10 0 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 S(Cu) (cm²) 0 4 8 12 16 20 24 28 32 36 40 Figure 12. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) Iarm (A) 55 50 45 40 35 30 25 20 30 35 40 45 50 55 60 Operating area Varm (V) Forbidden area 4/9 Doc ID 5506 Rev 6 STPS30L30C Package information 2 Package information ● ● ● Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. TO-220AB dimensions Dimensions Ref. Millimeters Min. A C H2 Dia L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 Doc ID 5506 Rev 6 5/9 Package information STPS30L30C Mounting (soldering) the I2PAK metal slug (heatsink) with alloy, like a surface mount device, IS NOT PERMITTED. A standard through-hole mounting is mandatory. Table 6. I2PAK dimensions Dimensions Ref. A E L2 c2 Millimeters Min. Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Inches Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.195 0.394 0.512 0.138 0.050 Max. 0.181 0.107 0.035 0.067 0.028 0.052 0.368 0.106 0.203 0.409 0.551 0.155 0.055 A A1 b 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 D b1 c L1 L b1 A1 c2 D e e1 b e e1 c E L L1 L2 6/9 Doc ID 5506 Rev 6 STPS30L30C Table 7. D2PAK dimensions Package information Dimensions Ref. Millimeters Min. A A E L2 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 A1 C2 A2 B D L L3 A1 B2 B G A2 R B2 C C2 C D E G L M * V2 L2 L3 * FLAT ZONE NO LESS THAN 2mm M R V2 0.40 typ. 0° 8° 0.016 typ. 0° 8° Figure 13. D2PAK footprint (dimensions in mm) 16.90 10.30 1.30 5.08 8.90 3.70 Doc ID 5506 Rev 6 7/9 Ordering information STPS30L30C 3 Ordering information Table 8. Ordering information Marking STPS30L30CT STPS30L30CR STPS30L30CG STPS30L30CG Package TO-220AB D PAK D PAK I2PAK 2 2 Order code STPS30L30CT STPS30L30CG STPS30L30CG-TR STPS30L30CG-TR Weight 2.0 g 1.8 g 1.8 g 1.49 g Base qty Delivery mode 50 50 1000 50 Tube Tube Tape and reel Tube 4 Revision history Table 9. Date Jul-2003 29-Apr-2010 Document revision history Revision 5C 6 Previous issue Added Figure 1 and Figure 12. Added parameters VARM and VASM to Table 2. Changes 8/9 Doc ID 5506 Rev 6 STPS30L30C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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