STPS30L30CG-TR

® STPS30L30CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n n n n n n 2 x 15 A 30 V 150 °C 0.37 V A2 K K VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 A1 K A1 A2 TO-220AB STPS30L30CT D2PAK STPS30L30CG DESCRIPTION Dual center tap Schottky rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-220AB, D2PAK and I²PAK, these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise reverse voltage Tc = 140°C δ = 0.5 Per diode Per device Value 30 30 15 30 220 1 3 5300 - 65 to + 150 150 10000 Unit V A A A A A W °C °C V/µs A2 K A1 I2PAK STPS30L30CR tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz square tp = 100µs square tp = 1µs Tj = 25°C July 2003 - Ed: 5C 1/5 STPS30L30CT/CG/CR THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Parameter Junction to case Per diode Total Coupling Value 1.5 0.8 0.1 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min. Typ. 170 VR = VRRM IF = 15 A IF = 15 A IF = 30 A IF = 30 A 0.43 0.33 Max. 1.5 350 0.46 0.37 0.57 0.5 Unit mA mA V To evaluate the conduction losses use the following equation : P = 0.24x IF(AV) + 0.009 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 Fig. 2: Average current versus temperature (δ=0.5) (per diode). IF(av)(A) 16 14 12 10 Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) ambient 10 9 8 7 6 5 4 3 2 1 0 δ=1 8 6 T Rth(j-a)=50°C/W T 4 tp IF(av) (A) 0 2 4 6 8 10 12 14 δ=tp/T 2 δ=tp/T tp Tamb(°C) 50 75 100 125 150 16 18 20 0 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/5 STPS30L30CT/CG/CR Fig. 4: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode). IM(A) 250 225 200 175 150 125 100 75 50 IM 25 0 1E-3 Fig. 5: Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=25°C Tc=75°C Tc=110°C 0.6 0.4 δ = 0.5 δ = 0.2 T 0.2 t δ = 0.1 δ=0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-4 Single pulse tp(s) 1E-3 1E-2 δ=tp/T tp 1E-1 1E+0 Fig. 6: Reverse leakage current versus reverse voltage applied (typical values) (per diode). IR(mA) 1E+3 Tj=150°C Fig. 7: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(nF) 5.0 F=1MHz Tj=25°C 1E+2 Tj=125°C 1E+1 1E+0 Tj=25°C 1.0 1E-1 1E-2 VR(V) 0 5 10 15 20 25 30 0.1 VR(V) 1 2 5 10 20 50 Fig. 8: Forward voltage drop versus forward current (maximum values - per diode). Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board FR4, e(Cu) = 35 µm) (STPS30L30CG). Rth(j-a) (°C/W) 80 70 IFM(A) 200 100 Tj=150°C (typical values) 60 50 Tj=125°C 40 30 20 10 10 Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 S(Cu) (cm²) 0 4 8 12 16 20 24 28 32 36 40 3/5 STPS30L30CT/CG/CR PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. n n n Cooling method: C Recommended torque value: 0.55 m.N Maximum torque value: 0.70 m.N PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A A1 b b1 b2 c c2 D L1 b2 L b1 b e 4/5 A1 D e E L c L1 L2 STPS30L30CT/CG/CR PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm FOOT PRINT (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 Ordering type STPS30L30CT STPS30L30CG STPS30L30CG-TR STPS30L30CR n Marking STPS30L30CT STPS30L30CG STPS30L30CG STPS30L30CR Package TO-220AB D2PAK D2PAK I2PAK Weight 2g 1.8g 1.8g 1.49g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape & reel Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. 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