STPS30M120SR

STPS30M120S Power Schottky rectifier Datasheet − production data Features A K ■ High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A A Description A This Schottky diode is suited for high frequency switch mode power supply. Packaged in TO-220AB narrow leads and I2PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. e t e l o s Table 1. "Forward" ro I 2 x IO P e let VRRM VR VAR so du I V Ob ) s ( ct Electrical characteristics(a) Figure 1. IF IO K X c u d o r P TO-220AB narrow leads STPS30M120STN b O - ) s t( K K A A K I2PAK STPS30M120SR Device summary Symbol Value IF(AV) 30 A VRRM 120 V VF (typ) 0.45 V Tj (max) 150 °C X V IR VTo VF(Io) VF VF(2xIo) "Reverse" IAR a. VARM and IARM must respect the reverse safe operating area defined in Figure 9. VAR and IAR are pulse measurements (tp < 10 µs). VR, IR, VRRM and VF, are static characteristics April 2012 This is information on a product in full production. Doc ID 022918 Rev 1 1/8 www.st.com 8 Characteristics 1 STPS30M120S Characteristics Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at Tamb = 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 120 V IF(RMS) Forward rms current 50 A A IF(AV) Average forward current, δ = 0.5 Tc = 110 °C 30 IFSM Surge non repetitive forward current tp = 10 ms sine-wave 260 PARM(1) Repetitive peak avalanche power Tj = 125 °C, tp = 10 µs 1450 VARM(2) Maximum repetitive peak tp < 10 µs, Tj < 125 °C, IAR < 9.7 A avalanche voltage VASM(2) Maximum single-pulse peak avalanche voltage Tstg Tj o r P e t e Storage temperature range Maximum operating junction ol temperature(3) s b O A ct W 150 V 150 V -65 to +175 °C 150 °C du tp < 10 µs, Tj < 125 °C, IAR < 9.7 A ) s ( 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”. ) (s 2. See Figure 9 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj 3. t c u Table 3. Thermal resistance Symbol Rth(j-c) let Symbol Ob Junction to case P e Table 4. so d o r IR(1) VF(2) Parameter Unit 1.3 °C/W Static electrical characteristics (terminals 1 and 3 short circuited) Parameter Reverse leakage current Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C VR = VRM Min. Typ. Max. Unit - 70 345 µA - 25 65 mA Tj = 125 °C IF = 5 A - 0.45 0.50 Tj = 125 °C IF = 10 A - 0.52 0.57 Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 15 A IF = 30 A - 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.53 x IF(AV) + 0.0067 x IF2(RMS) Doc ID 022918 Rev 1 0.75 0.57 - 1. Pulse test: tp = 5 ms, δ < 2% 2/8 Value 0.62 0.90 0.66 0.73 V STPS30M120S Figure 2. 35 Characteristics Average forward power dissipation Figure 3. versus average forward current PF(AV)(W) δ=1 δ = 0.5 Rth(j-a) = Rth(j-c) 30 δ = 0.2 δ = 0.1 25 IF(AV)(A) 35 30 Average forward current versus ambient temperature (δ = 0.5) 25 δ = 0.05 20 20 15 15 10 10 T 5 IF(AV)(A) tp 0 Tamb(°C) 0 0 5 Figure 4. 1 10 15 20 25 30 35 40 Normalized avalanche power derating versus pulse duration 0 25 Figure 5. PARM (t p ) PARM (10 µs) 1.0 75 100 125 150 c u d Relative variation of thermal impedance junction to case versus pulse duration e t le o r P o s b 0.8 0.7 0.1 -O 0.6 0.5 (s) 0.01 t c u d o r 0.001 1 10 P e 0.4 0.3 o s b Single pulse 0.2 0.1 t p(µs) tp(s) 0.0 1.E-04 100 1.E-03 1.E-02 1.E-01 1.E+00 1000 let Figure 6. 1.E+03 50 Zth(j-c)/Rth(j-c) 0.9 O ) s t( 5 δ = tp / T Reverse leakage current versus reverse voltage applied (typical values) Figure 7. IR(mA) 10000 Junction capacitance versus reverse voltage applied (typical values) C(pF) F=1MHz Vosc =30mVRMS Tj =25°C 1.E+02 Tj =150°C 1.E+01 Tj =125°C Tj =100°C 1000 1.E+00 Tj =75°C Tj =50°C 1.E-01 Tj =25°C 1.E-02 VR(V) 1.E-03 0 10 20 30 40 50 60 70 80 90 100 110 120 VR(V) 100 1 Doc ID 022918 Rev 1 10 100 1000 3/8 Characteristics Figure 8. 1000.0 STPS30M120S Forward voltage drop versus forward current Figure 9. Reverse safe operating area (tp < 10 µs and Tj < 125 °C) IFM(A) Iarm (A) Tj =125°C (Maximum values) 100.0 Tj =125°C (Typical values) 10.0 Tj =25°C (Maximum values) 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 12.5 12.0 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8.0 120 Varm (V) 130 140 150 t c u d o r P e et l o s ) s ( ct b O - u d o r P e t e l o s b O 4/8 ) s ( 160 1.6 Doc ID 022918 Rev 1 170 STPS30M120S 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. Max. c u d Max. 4.60 0.17 0.18 Dimensions Ref. Millimeters Min. E D ct L20 L30 du L1 s b O e t e ol o r P 1 2 L C b (x3) e1 0.024 0.034 0.95 1.20 0.037 0.047 0.48 0.70 0.019 0.027 15.25 15.75 0.60 0.62 l o s 1.27 0.05 E 10.00 10.40 0.39 0.41 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.19 0.20 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.24 0.26 J1 2.40 2.72 0.095 0.107 L 13.00 14.00 0.51 0.55 L1 2.60 2.90 0.102 0.114 J1 3 e 0.88 D1 D1 Typ. 0.61 D H1 Min. b c ) (s Q e t e o r P 4.40 Ob F Typ. Inches A b1 A P b1(x3) ) s t( TO-220AB narrow leads dimensions L20 15.40 0.61 L30 28.90 1.14 ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 Doc ID 022918 Rev 1 5/8 Package information STPS30M120S Devices in I2PAK with nickel-plated back frame must NOT be mounted by frame soldering like SMDs. Such devices are intended to be through-hole mounted ONLY and in no circumstances shall ST be held liable for any lack of performance or damage arising out of soldering of nickel-plated back frames. Table 6. I2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 b1 1.14 1.70 c 0.49 c2 1.23 A E L2 D L1 A1 0.035 0.044 0.067 0.70 0.019 0.028 1.32 0.048 0.052 8.95 9.35 0.352 0.368 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 E 10 10.40 0.394 0.409 L 13 14 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 Ob c e )- e1 s ( t c u d o r P e t e l o s b O 6/8 e t le so e b Doc ID 022918 Rev 1 uc 0.024 D b1 L ) s t( c2 od Pr STPS30M120S 3 Ordering information Ordering information Table 7. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STPS30M120SR PS30M120SR I2PAK 1.49 g 50 Tube STPS30M120STN PS30M120STN TO-220AB narrow leads 1.9 g 50 Tube ) s t( Revision history Table 8. c u d Document revision history Date Revision 02-Apr-2012 1 o r P Changes e t le First issue. o s b O ) s ( t c u d o r P e t e l o s b O Doc ID 022918 Rev 1 7/8 STPS30M120S ) s t( c u d Please Read Carefully: o r P Information in this document is provided solely in connection with ST products. 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