STPS30M60DJF-TR

STPS30M60DJF-TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    PowerFLAT_5.2X6.15MM

  • 描述:

    60 V、30 A PowerFLAT低压降低漏电流高效功率肖特基二极管

  • 详情介绍
  • 数据手册
  • 价格&库存
STPS30M60DJF-TR 数据手册
STPS30M60DJF High efficiency power Schottky diode Datasheet − production data Features ■ Very low conduction losses ■ Low forward voltage drop ■ Low thermal resistance ■ High specified avalanche capability ■ High integration ■ ECOPACK®2 compliant component A K A K K Description The STPS30M60DJF is a power Schottky rectifier, suited for high frequency switch mode power supply and DC to DC converters. Packaged in PowerFLAT™, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Its low profile was especially designed to be used in applications with space-saving constraints. A A PowerFLAT 5x6 STPS30M60DJF Table 1. Device summary Symbol Value IF(AV) 30 A VRRM 60 V VF(typ) 0.46 V Tj(max) 150 °C TM: PowerFLAT is a trademark of STMicroelectronics April 2012 This is information on a product in full production. Doc ID 023120 Rev 1 1/8 www.st.com 8 Characteristics 1 STPS30M60DJF Characteristics Table 2. Absolute ratings (limiting values, anode terminals 1 and 3 short circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) Forward rms current 45 A IF(AV) Average forward current δ = 0.5 Tc = 100 °C 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 250 A 3500 W 80 V -65 to +175 °C 150 °C PARM (1) VARM Tstg Tj Repetitive peak avalanche power Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C IAR < 13 A Storage temperature range Maximum operating junction temperature (2) 1. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics’ application notes AN1768 and AN2025. 2. 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Rth(j-c) Table 4. Symbol IR(1) Parameter Junction to case Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C 2.0 °C/W VR = VRRM IF = 15 A Min. Typ. Max. Unit - - 90 µA - 20 50 mA - - 0.59 - 0.46 0.52 - - 0.72 - 0.57 0.67 V IF = 30 A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.55 x IF(AV) + 0.004 x IF2(RMS) 2/8 Unit Static electrical characteristics (anode terminals short circuited) Tj = 25 °C VF(2) Value Doc ID 023120 Rev 1 STPS30M60DJF Figure 1. Characteristics Average forward power dissipation Figure 2. versus average forward current PF(AV)(W) 30 Average forward current versus ambient temperature (δ = 0.5) IF(AV)(A) 35 Rth(j-a) = Rth(j-c) 30 δ = 0.5 25 δ=1 25 20 δ = 0.2 20 δ = 0.1 15 δ = 0.05 T 15 δ = tp / T 10 tp 10 T 5 5 δ = tp / T IF(AV)(A) Tamb(°C) tp 0 0 0 5 10 Figure 3. 15 20 25 30 35 0 40 Normalized avalanche power derating versus pulse duration 25 50 Figure 4. PARM(tp) PARM(1 µs) 75 100 125 150 Normalized avalanche power derating versus junction temperature PARM(Tj) PARM(25 °C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 0.1 Figure 5. 280 Tj(°C) tp(µs) 1 0 10 100 1000 Non repetitive surge peak forward current versus overload duration (maximum values) IM(A) 25 50 Figure 6. 1.0 75 100 125 150 Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.9 240 0.8 200 0.7 0.6 160 Tc = 25 °C 120 0.4 Tc = 75 °C 80 40 0.5 Tc = 125 °C IM 0 1.E-03 t δ = 0.5 0.3 0.2 0.1 Single pulse tp(s) t(s) 0.0 1.E-02 1.E-01 1.E+00 1.E-05 Doc ID 023120 Rev 1 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 3/8 Characteristics Figure 7. 1.E+03 STPS30M60DJF Reverse leakage current versus reverse voltage applied (typical values) Figure 8. IR(mA) 10000 Junction capacitance versus reverse voltage applied (typical values) C(pF) F = 1 MHz Vosc = 30 mVRMS T = 25 °C 1.E+02 j Tj = 150 °C 1.E+01 Tj = 125 °C 1.E+00 1000 Tj = 100 °C Tj = 75 °C 1.E-01 Tj = 50 °C 1.E-02 Tj = 25 °C VR(V) 1.E-03 0 5 Figure 9. 100.0 10 15 20 25 30 35 40 45 50 55 1 60 Forward voltage drop versus forward current 10 100 Figure 10. Thermal resistance junction to ambient versus copper surface under tab IFM(A) Rth(j-a)(°C/W) 250 epoxy printed board FR4, copper thickness = 35 µm Tj = 125 °C (Maximum values) 200 Tj = 125 °C (Typical values) 10.0 VR(V) 100 150 100 1.0 Tj = 25 °C (Maximum values) 50 VFM(V) Scu(cm²) 0 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 1 2 3 4 Figure 11. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) Iarm (A) 20 15 10 Varm 5 60 4/8 65 70 75 80 85 90 95 Doc ID 023120 Rev 1 100 105 110 5 6 7 8 9 10 STPS30M60DJF Package information ● Epoxy meets UL94,V0 ● Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. PowerFLAT 5x6 dimensions Dimensions Ref. Millimeters Min. D2 E2 K Typ. b L Max. Min. Typ. Max. A 0.80 1.00 0.031 0.039 A1 0.02 0.05 0.001 0.002 A2 e Inches b 0.25 0.30 0.010 0.50 0.012 0.020 A A1 D A2 D D2 E 5.20 4.11 0.205 4.31 0.162 0.170 e 1.27 0.050 E 6.15 0.242 E2 3.50 3.70 0.138 0.146 L 0.50 0.80 0.020 0.031 K 1.275 1.575 0.050 0.062 Figure 12. Footprint (dimensions in mm) 5.35 4.41 3.86 4.33 6.29 2 Package information 0.98 0.95 0.62 1.27 Doc ID 023120 Rev 1 5/8 Package information STPS30M60DJF Figure 13. Tape and reel specifications Dot identifying Pin A1 location 2.0 Ø 1.55 1.75 4.0 0.30 Ø 1.5 5.30 12.0 5.5 0.20 R 0.50 6.30 8.0 1.20 All dimensions are typical values in mm 6/8 User direction of unreeling Doc ID 023120 Rev 1 STPS30M60DJF 3 Ordering information Ordering information Table 6. 4 Ordering information Order code Marking Package STPS30M60DJF-TR PS30 M60 PowerFLAT 5x6 Weight Base qty Delivery mode 95 mg 3000 Tape and reel Revision history Table 7. Document revision history Date Revision 18-Apr-2012 1 Changes First issue. Doc ID 023120 Rev 1 7/8 STPS30M60DJF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 Doc ID 023120 Rev 1
STPS30M60DJF-TR
1. 物料型号: STPS30M60DJF 2. 器件简介: 该器件是一款高效率的功率肖特基整流二极管,适合用于高频开关电源和DC-DC转换器。它具有非常低的导通损耗、低正向电压降、低热阻、高规范的雪崩能力、高集成度,并符合ECOPACK®2标准。 3. 引脚分配: 引脚分配图显示了PowerFLAT™ 5x6封装的引脚布局,但文档中没有提供具体的引脚功能描述。 4. 参数特性: 包括重复峰值反向电压(VRRM)为60V,正向RMS电流(IF(RMS))为45A,平均正向电流(IF(AV))为250A,最大工作结温(T(max))为150°C等。 5. 功能详解: 提供了关于器件的绝对额定值、热阻、静态电气特性等详细描述,并附有图表说明正向功率耗散、雪崩能量测量、反向漏电流与反向电压的关系等。 6. 应用信息: 该器件适用于笔记本电脑、游戏机和桌面适配器等,特别是在空间受限的应用中,其低轮廓设计具有优势。 7. 封装信息: 提供了PowerFLAT 5x6封装的尺寸信息和胶带及卷轴规格。
STPS30M60DJF-TR 价格&库存

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STPS30M60DJF-TR
  •  国内价格
  • 1+14.78140
  • 10+12.56420
  • 30+10.34700
  • 100+9.23840
  • 500+8.49930
  • 1000+7.39070

库存:0

STPS30M60DJF-TR

    库存:0