STPS340U_03

® STPS340U/S/B POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n n n n n n n 3A 40 V 150 °C 0.57 V A NC K VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE AVALANCHE CAPABILITY SPECIFIED DPAK STPS340B DESCRIPTION Single chip Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB, SMC and DPAK this device is intended for use in low and medium voltage operation, high frequency inverters, free wheeling and polarity protection applications where low switching losses are required. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage SMB (JEDEC DO-214AA) STPS340U SMC (JEDEC DO-214AB) STPS340S Value 40 DPAK SMB / SMC 6 10 Unit V A A Tc = 135°C δ = 0.5 TL = 105°C δ = 0.5 DPAK SMB / SMC 3 75 1 1300 - 65 to + 150 + 150 10000 A A W °C °C V/µs 1/7 tp = 10 ms Sinusoidal tp = 2 µs tp = 1µs F = 1kHz square Tj = 25°C July 2003 - Ed: 7B STPS340U/S/B THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-c) Parameter Junction to leads Junction to case SMC SMB DPAK Value 20 25 5.5 °C/W Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions IR * Reverse leakage current VF * Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2 % Min. Typ. 2 VR = VRRM VR = VRRM IF = 3 A IF = 6 A IF = 3 A IF = 6 A 0.52 0.63 Max. 20 10 0.63 0.84 0.57 0.72 Unit µA mA V To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.050 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 2.5 2.0 1.5 1.0 T Fig. 2: Average current temperature (δ =0.5). IF(av)(A) versus ambient δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 3.5 3.0 δ=1 Rth(j-a)=Rth(j-c) (DPAK) 2.5 2.0 1.5 1.0 tp Rth(j-a)=65°C/W Rth(j-a)=Rth(j-l) (SMB/SMC) T 0.5 0.0 0.0 IF(av) (A) 0.5 1.0 1.5 2.0 2.5 δ=tp/T 0.5 4.0 3.0 3.5 0.0 δ=tp/T tp Tamb(°C) 50 75 100 125 150 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/7 STPS340U/S/B Fig. 5-1: Non repetitive surge peak forward current versus overload duration (SMB)(Maximum values). Fig. 5-2: Non repetitive surge peak forward current versus overload duration (SMC) (Maximum values). IM(A) 10 9 8 7 6 5 4 3 IM 2 1 0 1E-3 IM(A) 12 10 Ta=25°C 8 6 Ta=25°C Ta=50°C 4 Ta=100°C t Ta=50°C IM t 2 Ta=100°C δ=0.5 δ=0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 t(s) 1E-2 1E-1 1E+0 Fig. 5-3: Non repetitive surge peak forward current versus overload duration (DPAK) (Maximum values). IM(A) 50 40 30 20 10 IM t Fig. 6-1: Relative variation of thermal transient impedance junction to lead versus pulse duration (SMB). Zth(j-a)/Rth(j-a) 1.0 0.9 Printed circuit board (e=35µm) 0.8 0.7 0.6 0.5 δ = 0.5 0.4 0.3 0.2 δ = 0.2 0.1 δ = 0.1 tp(s) Single pulse 0.0 1.0E-2 1.0E-1 1.0E+0 1.0E+1 Tc=25°C Tc=50°C Tc=100°C δ=0.5 T 0 1E-3 t(s) 1E-2 1E-1 1E+0 δ=tp/T tp 1.0E+2 1.0E+3 Fig. 6-2: Relative variation of thermal transient impedance junction to lead versus pulse duration (SMC). Zth(j-a)/Rth(j-a) 1.0 0.9 Printed circuit board (e=35µm) 0.8 0.7 0.6 0.5 δ = 0.5 0.4 0.3 0.2 δ = 0.2 0.1 δ = 0.1 tp(s) Single pulse 0.0 1.0E-2 1.0E-1 1.0E+0 1.0E+1 Fig. 6-3: Relative variation of thermal transient impedance junction to lead versus pulse duration(DPAK). Zth(j-a)/Rth(j-a) T δ=tp/T tp 1.0E+2 1.0E+3 1.0 0.9 Printed circuit board (e=35µm) 0.8 0.7 0.6 δ = 0.5 0.5 0.4 0.3 δ = 0.2 0.2 δ = 0.1 Single pulse 0.1 0.0 1E-3 1E-2 T tp(s) δ=tp/T tp 1E-1 1E+0 3/7 STPS340U/S/B Fig. 7: Reverse leakage current versus reverse voltage applied (Typical values). Fig. 8: Junction capacitance versus reverse voltage applied (Typical values). IR(A) 1E-2 Tj=150°C C(pF) 500 F=1MHz Tj=25°C Tj=125°C 200 100 50 1E-3 Tj=100°C 1E-4 Tj=75°C 20 VR(V) 1E-5 0 5 10 15 20 25 30 35 40 10 1 2 5 VR(V) 10 20 50 Fig. 9: Forward voltage drop versus forward current (Maximum values). Fig. 10-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMB). Rth(j-a) (°C/W) 120 10.00 IFM(A) Typical values Tj=150°C 100 Tj=125°C 1.00 80 60 0.10 VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 40 20 S(Cu) (cm²) 0 0 1 2 3 4 5 Fig. 10-2: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMC). Rth(j-a) (°C/W) 100 80 60 40 20 S(Cu) (cm²) 0 0 1 2 3 4 5 Fig. 10-3: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (DPAK). Rth(j-a) (°C/W) 100 80 60 40 20 S(Cu) (cm²) 0 0 2 4 6 8 10 12 14 16 18 20 4/7 STPS340U/S/B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0° 8° FOOTPRINT DIMENSIONS (in millimeters) 6.7 6.7 3 3 1.6 2.3 2.3 1.6 5/7 STPS340U/S/B PACKAGE MECHANICAL DATA SMB E1 DIMENSIONS REF. D Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 A2 b E 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 c E A1 E1 D L b C L A2 FOOTPRINT DIMENSIONS (in millimeters) 2.3 1.52 2.75 1.52 6/7 STPS340U/S/B PACKAGE MECHANICAL DATA SMC E1 DIMENSIONS REF. A1 A2 b c E E1 E2 D L b Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 D E A1 C L A2 E2 FOOTPRINT DIMENSIONS (in millimeters) 3.3 2.0 Ordering type STPS340U STPS340S STPS340B STPS340B-TR n n 4.2 Marking U34 S34 S340 S340 2.0 Package SMB SMC DPAK DPAK Weight 0.107g 0.243g 0.30g 0.30g Base qty 2500 2500 75 2500 Delivery mode Tape and reel Tape and reel Tube Tape and reel BAND INDICATES CATHODE ON SMB, SMC EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7