STPS3L25S

STPS3L25S ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 25 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS n n n n VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS HIGH POWER SURFACE MOUNT MINIATURE PACKAGE AVALANCHE CAPABILITY SPECIFIED SMC JEDEC DO-214AB DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMC, this device is especially intended for use as an antiparallel diode on synchronous rectification freewheel MOSFET’s at the secondary of 3.3V SMPS and DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 25 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current TL = 115°C δ = 0.5 3 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp= 2 µs square F=1kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 1 A Tstg Storage temperature range - 65 to + 150 °C 1500 W 150 °C 10000 V/µs PARM Tj dV/dt * : Repetitive peak avalanche power tp = 1µs Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 4A 1/4 STPS3L25S THERMAL RESISTANCES Symbol Parameter Rth(j-l) Junction to lead Value Unit 20 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions Tests Conditions IR * Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 125°C VF * Forward voltage drop Tj = 25°C 15 IF = 3 A Tj = 125°C Tj = 25°C Typ. 0.37 IF = 6 A Max. Unit 90 µA 30 mA 0.49 V 0.44 0.6 Tj = 125°C 0.5 0.58 * tp = 380 µs, δ < 2% Pulse test: To evaluate the maximum conduction losses use the following equation : P = 0.3 x IF(AV) + 0.047 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 2/5 IF(av)(A) 3.5 δ = 0.1 δ = 0.2 δ = 0.05 δ = 0.5 Rth(j-a)=Rth(j-l) 3.0 2.5 δ=1 2.0 Rth(j-a)=90°C/W 1.5 1.0 T T 0.5 IF(av) (A) 0.5 1.0 1.5 2.0 2.5 δ=tp/T 3.0 3.5 δ=tp/T tp 0.0 4.0 0 Tamb(°C) tp 25 50 75 100 125 150 STPS3L25S Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 1000 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). 0 25 50 75 100 125 150 Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) IM(A) 14 1.0 12 0.8 10 8 6 Ta=25°C 0.6 Ta=50°C 0.4 δ = 0.5 4 δ = 0.2 Ta=100°C IM 2 t 0.2 T δ = 0.1 t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 0.0 1E-2 Single pulse 1E-1 δ=tp/T tp(s) 1E+0 1E+1 tp 1E+2 5E+2 Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(mA) 1E+2 500 F=1MHz Tj=25°C Tj=150°C 1E+1 Tj=125°C Tj=100°C 1E+0 100 1E-1 Tj=25°C 1E-2 1E-3 VR(V) 0 5 10 VR(V) 15 20 25 10 1 2 5 10 20 30 3/5 STPS3L25S Fig. 9-1: Forward voltage drop versus forward current (maximum values, high level). IFM(A) 50 Typical values Tj=150°C Tj=25°C 10 Tj=125°C Tj=100°C 1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: Rth(j-a) (°C/W) 100 90 80 70 60 50 40 30 S(Cu) (cm²) 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/5 Fig. 9-2: Forward voltage drop versus forward current (maximum values, low level). IFM(A) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 0.2 Typical values Tj=150°C Tj=125°C Tj=25°C Tj=100°C VFM(V) 0.3 0.4 0.5 0.6 STPS3L25S PACKAGE MECHANICAL DATA SMC DIMENSIONS REF. E1 D E A1 Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 L 0.75 1.60 0.030 0.063 A2 C E2 L b FOOT PRINT DIMENSIONS (in millimeters) 3.3 2.0 n n 4.2 2.0 Ordering type Marking Package Weight Base qty Delivery mode STPS3L25S S23 SMC 0.243g 2500 Tape & reel BAND INDICATES CATHODE EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5