STPS3L60S

® STPS3L60S POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 3A 60 V 150°C 0.65 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE DESCRIPTION Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMC, this device is intended for use in DC/DC chargers. SMC (JEDEC DO-214AB) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 100°C δ = 0.5 tp = 10 ms Sinusoidal tp=2 µs square F=1kHz Value 60 10 3 75 1 - 65 to + 175 150 10000 Unit V A A A A °C °C V/µs *: dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j−a) July 1999 - Ed: 1A 1/4 STPS3L60S THERMAL RESISTANCES Symbol Rth(j-l) Junction to leads Parameter Value 20 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.54 x IF(AV) + 0.037 IF2(RMS) VR = VRRM 10 IF = 3 A IF = 3 A IF = 6 A IF = 6 A 0.67 0.56 Min. Typ. Max. 55 15 0.7 0.65 0.94 0.76 Unit µA mA V Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 2.5 δ = 0.1 δ = 0.2 Fig. 2: Average forward current versus ambient temperature(δ = 0.5). IF(av)(A) δ = 0.5 3.5 δ=1 2.0 1.5 1.0 δ = 0.05 3.0 2.5 2.0 1.5 Rth(j-a)=Rth(j-l) Rth(j-a)=75°C/W T 1.0 0.5 tp T 0.5 IF(av) (A) δ=tp/T δ=tp/T tp Tamb(°C) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0 25 50 75 100 125 150 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) Fig. 4: Relative variation of thermal impedance junction to lead versus pulse duration. Zth(j-l)/Rth(j-l) 1.0 0.9 0.8 0.7 δ = 0.5 0.6 0.5 0.4 δ = 0.2 0.3 δ = 0.1 0.2 Single pulse 0.1 0.0 1E-3 14 12 10 8 6 4 IM Tc=25°C Tc=50°C T 2 0 1E-3 Tc=100°C t δ=0.5 t(s) tp(s) δ=tp/T tp 1E-2 1E-1 1E+0 1E-2 1E-1 1E+0 2/4 STPS3L60S Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 5E+1 1E+1 1E+0 1E-1 1E-2 1E-3 IR(mA) Tc=150°C Tc=125°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 200 F=1MHz Tj=25°C Tc=100°C Tc=75°C 100 50 20 Tc=50°C Tc=25°C VR(V) 0 5 10 15 20 25 30 35 40 45 50 55 60 10 1 VR(V) 10 100 Fig. 7-1: Forward voltage drop versus forward current (low level, maximum values). IFM(A) 5.0 Tj=150°C 4.5 (typical values) 4.0 Tj=25°C 3.5 3.0 Tj=125°C 2.5 2.0 1.5 1.0 0.5 VFM(V) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 7-2: Forward voltage drop versus forward current (high level, maximum values). 20 10 5 IFM(A) Tj=150°C (typical values) Tj=25°C Tj=125°C 2 1 0.2 VFM(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 8: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35mm) 100 80 60 40 20 S(Cu) (cm²) 0 0 1 2 3 4 5 Rth(j-a) (°C/W) 3/4 STPS3L60S PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. A1 A2 b c E E1 E2 D L Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 D E A1 C L A2 E2 b FOOT PRINT ( in millimeters) 3.3 2.0 4.2 2.0 Ordering type STPS3L60S Marking S36 Package SMC Weight 0.24g Base qty 2500 Delivery mode Tape and reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4