STPS3L60UY

STPS3L60U-Y Automotive power Schottky rectifier Datasheet  production data Features  Negligible switching losses A  Low forward voltage drop  Avalanche capability specified  AEC-Q101 qualified K SMB STPS3L60UY Description Table 1. Device summary Symbol Value IF(AV) 3A VRRM 60 V Tj (max) 150 °C VF (max) 0.61 V March 2013 This is information on a product in full production. Surface mount power Schottky rectifier suited for high frequency DC to DC converters. Packaged in SMB, this device is intended for use in low voltage, high frequency inverters and small battery chargers and for applications where there are space constraints. DocID024414 Rev 1 1/7 www.st.com 7 Characteristics 1 STPS3L60U-Y Characteristics Table 2. Absolute ratings(1) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) RMS forward current 10 A 3 A IF(AV) Average forward current TL = 105 °C = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2000 W -65 to + 150 °C -40 to + 150 °C 10000 V/µs Tstg Storage temperature range Operating junction Tj dV/dt temperature(2) range Critical rate of rise reverse voltage 1. limiting values, per diode 2. dPtot --------------dTj 1 - condition to avoid thermal runaway for a diode on its own heatsink  ------------------------Rth  j – a  Table 3. Thermal resistance Symbol Rth (j-l) Parameter Value Unit 20 C/W Junction to leads Table 4. Static electrical characteristics Symbol Parameter Tests Conditions Min. Typ. Max. Unit - - 150 µA - 4 15 Tj = 125 °C - 14 30 Tj = 25 °C - - 0.62 - 0.53 0.61 Tj = 125 °C - 0.51 0.59 Tj = 25 °C - - 0.79 - 0.62 0.71 - 0.6 0.69 Tj = 25 °C IR (1) Reverse leakage current Tj = 100 °C Tj = 100 °C VF (1) Forward voltage drop Tj = 100 °C VR = VRRM IF = 3 A V IF = 6 A Tj = 125 °C 1. Pulse test: tp = 380 µs,  < 2% To evaluate the conduction losses use the following equation: P = 0.44 x IF(AV) + 0.05 x IF2(RMS) 2/7 mA DocID024414 Rev 1 STPS3L60U-Y Characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (= 0.5) PF(AV)(W) 2.50 δ = 0.05 2.25 δ = 0.1 3.5 δ = 0.2 IF(AV)(A) δ = 0.5 Rth(j-a)=Rth(j-I) 3.0 2.00 δ=1 1.75 2.5 1.50 2.0 Rth(j-a)=80°C/W 1.25 1.5 1.00 1.0 0.75 T 0.50 0.5 0.25 IF(AV)(A) δ=tp/T 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tamb(°C) tp 3.5 0.0 0 4.0 25 50 75 100 125 150 Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating versus pulse duration versus junction temperature PARM(tp) PARM(1 µs) PARM(Tj) PARM(25 °C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 1000 Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values) 25 50 75 100 125 150 Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration IM(A) Zth(j-a)/Rth(j-a) 11 1.0 10 0.9 9 0.8 8 0.7 7 Ta=25 °C 6 0.6 0.5 5 Ta=50 °C 4 0.3 3 2 0.4 Ta=100 °C IM 1 0 1.E-03 t(s) t δ =0.5 0.2 Single pulse 0.1 tp(s) 0.0 1.E-02 1.E-01 1.E+00 1.E-01 DocID024414 Rev 1 1.E+00 1.E+01 1.E+02 1.E+03 3/7 Characteristics STPS3L60U-Y Figure 7. Reverse leakage current versus reverse voltage applied (typical values) 1.E+02 Figure 8. Junction capacitance versus reverse voltage applied (typical values) IR(mA) C(pF) 1000 F=1MHz Vosc=30mV Tj=25°C Tj=125°C 1.E+01 Tj=100°C 1.E+00 100 1.E-01 Tj=25°C 1.E-02 VR(V) VR(V) 10 1.E-03 0 5 10 15 20 25 30 35 40 45 50 55 1 60 10 100 Figure 9. Forward voltage drop versus forward Figure 10. Forward voltage drop versus forward current (high level) current (low level) IFM(A) IFM(A) 5 30 Tj=100°C (Typical values) 25 4 Tj=100°C (Typical values) 20 Tj=100°C (Maximum values) 3 Tj=25°C (Maximum values) 15 Tj=100°C (Maximum values) 2 10 Tj=25°C (Maximum values) 1 5 VFM(V) VFM(V) 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 11. Thermal resistance junction to ambient versus copper surface under each lead Rth(j-a)(°C/W) 120 Expoxy printed circuit FR4, copper thickness = 35 µm SMB 100 80 60 40 20 S(Cu)(cm²) 0 0.0 4/7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DocID024414 Rev 1 4.0 4.5 5.0 STPS3L60U-Y 2 Package information Package information  Epoxy meets UL94,V0  Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 12. SMB dimension definitions E1 D E A1 A2 C L b Table 5. SMB dimension values Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.40 0.006 0.016 D 3.30 3.95 0.130 0.156 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 L 0.75 1.50 0.030 0.059 Figure 13. SMB footprint, dimensions in mm (inches) 1.62 2.60 (0.064) (0.102) 1.62 (0.064) 2.18 (0.086) 5.84 (0.300) DocID024414 Rev 1 5/7 Ordering information 3 STPS3L60U-Y Ordering information Table 6. Ordering information 4 Order codes Marking Package Weight Base qty Delivery mode STPS3L60UY G36Y SMB 0.107 g 2500 Tape and reel Revision history Table 7. Document revision history 6/7 Date Revision 22-Mar-2013 1 Changes Initial release. DocID024414 Rev 1 STPS3L60U-Y Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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