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STPS4045CW

STPS4045CW

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    DIODE ARRAY SCHOTTKY 45V TO247-3

  • 数据手册
  • 价格&库存
STPS4045CW 数据手册
® STPS4045CP/CW POWER SCHOTTKY RECTIFIERS MAIN PRODUCTS CHARACTERISTICS IF(av) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE DESCRIPTION Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged either in SOT-93 or TO-247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive Peak reverse current Non repetitive peak reverse current Tc = 150°C δ = 0.5 Per diode Per device Value 45 30 20 40 220 1 3 - 65 to + 175 175 10000 Unit V A A A A A °C °C V/µs SOT-93 STPS4045CP TO-247 STPS4045CW 2 x 20 A 45 V 175 °C 0.63 V A1 K A2 A2 A1 K A2 K A1 tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage 1 dPtot thermal runaway condition for a diode on its own heatsink < Rth(j−a) dTj June 1999 - Ed: 3B 1/5 STPS4045CP/CW THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Rth (c) Parameter Per diode total Coupling Value 1.5 0.8 0.1 Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ TJ(diode 1) = P(diode1)x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.46 x IF(AV) + 0.0085 IF2(RMS) IF = 20 A IF = 40 A IF = 40 A 0.7 VR = VRRM 11 0.56 Min. Typ. Max. 200 40 0.63 0.94 0.83 Unit µA mA V VF * Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus ambient temperature (per diode). PF(av)(W) 18 16 14 12 10 8 6 4 2 0 δ = 0.2 δ = 0.1 δ = 0.05 δ= 1 δ = 0.5 IF(av)(A) 22 20 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T T IF(av) (A) 0 2 4 6 8 δ=tp/T tp δ=tp/T tp Tamb( °C) 50 75 100 125 150 175 10 12 14 16 18 20 22 24 26 0 25 2/5 STPS4045CP/CW Fig. 3: Nonrepetitivesurgepeakforwardcurrentversus overloadduration(maximum values)(per diode). Fig. 4: Relative variation of thermal transient impedancejunction to case versus pulse duration. IM(A) 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3 Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=75°C Tc=100°C Tc=125°C 0.6 0.4 δ = 0.5 δ = 0.2 T 0.2 t δ = 0.1 Single pulse δ=0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E-3 1E-2 δ=tp/T tp 0.0 1E-4 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) (per diode). IR(µA) 5E+4 Tj=150°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(nF) 5.0 Tj=125°C Tj=100°C Tj=75°C 1E+4 1E+3 1E+2 1E+1 1E+0 1.0 Tj=50°C Tj=25°C VR(V) 0 5 10 15 20 25 30 35 40 45 VR(V) 0.1 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (maximum values) (per diode). IFM(A) 200 100 Typical values Tj=125°C Tj=25°C Tj=125°C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/5 STPS4045CP/CW PACKAGE MECHANICAL DATA SOT-93 DIMENSIONS REF. A C D D1 E F F3 F4 G H L L2 L3 L5 L6 O Millimeters Min. Typ. Max. 4.70 4.90 1.90 2.10 2.50 2.00 0.50 0.78 1.10 1.30 1.75 2.10 10.80 11.10 14.70 15.20 12.20 16.20 18.0 3.95 4.15 31.00 4.00 4.10 Inches Min. Typ. Max. 1.185 0.193 0.075 0.083 0.098 0.078 0.020 0.031 0.043 0.051 0.069 0.083 0.425 0.437 0.279 0.598 0.480 0.638 0.709 0.156 0.163 1.220 0.157 0.161 4/5 STPS4045CP/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Min. Typ. Max. Min. A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Type STPS4045CP STPS4045CW Marking STPS4045CP STPS4045CW Package SOT-93 TO-247 Weight 3.97 g. 4.46 g. Base qty 30 30 Delivery mode Tube Tube Cooling method: by conduction (C) Recommended torque value: 0.8 N.m Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5
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