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STPS40H100CW

STPS40H100CW

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    肖特基二极管 1对共阴极 VR=100V IF=20A IR=10μA TO247-3

  • 数据手册
  • 价格&库存
STPS40H100CW 数据手册
® STPS40H100CW HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS 2 x 20 A 100 V 175 °C 0.61 V A2 K NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE RATED DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM EAS Tstg Tj dV/dt RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Non repetitive avalanche energy Storage temperature range Maximum operating junction temperature Critical rate of rise of rise voltage Tc = 160°C δ = 0.5 Parameter Repetitive peak reverse voltage A2 K1 A1 TO-247 Value 100 30 Per diode Per device 20 40 300 1 4 36 - 65 to + 175 175 10000 Unit V A A A A A mJ °C °C V/µs tp = 10 ms sinusoidal tp = 2 µs F = 1kHz square tp = 100 µs square Tj = 25°C L= 60 mH Ias = 3 A August 1999 - Ed: 3D 1/4 STPS40H100CW THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Junction to case Parameter Per diode Total Coupling Value 0.9 0.55 0.1 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% Min. Typ. Max. 10 Unit µA mA V VR = VRRM 5 IF = 20 A IF = 20 A IF = 40 A IF = 40 A 0.67 0.58 15 0.73 0.61 0.85 0.72 To evaluate the maximum conduction losses use the following equation : P = 0.5 x IF(AV) + 0.0055 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode). IF(av)(A) PF(av)(W) 16 14 12 10 8 6 T δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 δ=1 4 2 0 0.0 2.5 5.0 IF(av) (A) δ=tp/T tp 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 22 20 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T δ=tp/T tp Tamb(°C) 50 75 100 125 150 175 0 25 2/4 STPS40H100CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. IM(A) 400 350 300 250 200 Tc=100°C Tc=50°C Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 t δ = 0.5 150 100 50 0 1E-3 Tc=150°C IM δ = 0.2 δ = 0.1 T Single pulse δ=0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 0.0 1E-3 1E-2 1E-1 δ=tp/T tp 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (maximum values, per diode). Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 3.0 IR(mA) 1E+1 Tj=125°C F=1MHz Tj=25°C 1E+0 1E-1 1E-2 1E-3 1E-4 0 10 20 30 40 Tj=100°C 1.0 Tj=75°C Tj=25°C VR(V) 50 60 70 80 90 100 VR(V) 0.1 1 2 5 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (per diode). IFM(A) 200 100 Tj=125°C Typical values Tj=125°C Maximum values Tj=25°C Maximum values 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 3/4 STPS40H100CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Millimeters Min. Typ. Max. Min. Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Ordering type STPS40H100CW Marking STPS40H100CW Package TO-247 Weight 4.36g Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4
STPS40H100CW 价格&库存

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STPS40H100CW
  •  国内价格 香港价格
  • 600+12.59146600+1.44875
  • 1200+12.532621200+1.44198
  • 1800+12.532341800+1.44195

库存:9600

STPS40H100CW
  •  国内价格
  • 1+9.53113
  • 30+9.20247
  • 100+8.54515
  • 500+7.88783
  • 1000+7.55917

库存:0