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STPS40L15

STPS40L15

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STPS40L15 - LOW DROP OR-ing POWER SCHOTTKY DIODE - STMicroelectronics

  • 数据手册
  • 价格&库存
STPS40L15 数据手册
® STPS40L15CW/CT LOW DROP OR-ing POWER SCHOTTKY DIODE MAJOR PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) 2 x 20 A 15 V 150°C 0.33 V A2 K FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE REVERSE VOLTAGE SUITED TO OR-ing OF 3V, 5V and 12V RAILS A1 K A2 A2 K A1 DESCRIPTION Dual center tap schottky rectifier packaged in TO-220AB and TO-247, this device is especially intended for use as OR-ing diode in fault tolerant power supply equipments. TO-220AB STPS40L15CT TO-247 STPS40L15CW ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tcase = 140°C δ=1 Total Per diode Value 15 30 40 20 310 2 3 - 65 to + 150 150 10000 A A A °C °C V/µs Unit V A A tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz tp = 100 µs dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj November 1999 - Ed: 4A 1/5 STPS40L15CW/CT THERMAL RESISTANCES Symbol Rth(j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 1.6 0.85 0.1 Unit °C/W °C/W STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.18 x IF(AV) + 0.008 IF2(RMS) IF = 19 A IF = 40 A IF = 19 A IF = 40 A 0.28 0.42 VR = VRRM 200 Min. Typ. Max. 6 500 0.41 0.52 0.33 0.50 V Unit mA VF * Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 δ=1 Fig. 2: Average forward current versus ambient temperature (δ=1, per diode). IF(av)(A) 22 20 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) 8 7 6 5 4 3 2 1 0 Rth(j-a)=15°C/W T T IF(av) (A) 0 2 4 6 8 10 12 14 16 δ=tp/T tp δ=tp/T tp Tamb(°C) 50 75 100 125 150 18 20 22 0 25 2/5 STPS40L15CW/CT Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values per diode). IM(A) 250 200 150 Tc=50°C Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 Tc=75°C δ = 0.5 100 IM 0.4 0.2 δ = 0.2 δ = 0.1 T 50 0 1E-3 Tc=110°C t δ=0.5 t(s) Single pulse tp (s) 1E-1 1E+0 δ=tp/T tp 1E-2 0.0 1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values per diode). IR(mA) Fig. 6: Junction capacitance versus reverse voltage applied (typical values per diode). C(nF) 5.0 5E+2 1E+2 Tj=100°C F=1MHz Tj=25°C 1E+1 1.0 1E+0 Tj=25°C 1E-1 VR(V) 0 2 4 6 8 10 12 14 16 VR(V) 0.1 1 2 5 10 20 Fig. 7: Forward voltage drop versus forward current (typical values per diode). Fig. 8: Forward voltage drop versus forward current (typical maximum per diode). IFM(A) 200.0 100.0 Tj=150°C 200 100 Tj=25°C Tj=125°C Tj=75°C IFM(A) Tj=100°C 10.0 10 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 VFM(V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 3/5 STPS40L15CW/CT PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Cooling method: C Recommended torque value: 0.55 m.N Maximum torque value: 0.70 m.N 4/5 STPS40L15CW/CT PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Min. Typ. Max. Min. Typ. Max. V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Cooling method: C Recommended torque value: 0.8 m.N Maximum torque value: 1.0 m.N Ordering type Marking Package TO-247 TO-220AB Weight 4.4 g. 2g Base qty 30 50 Delivery mode Tube Tube STPS40L15CW STPS40L15CW STPS40L15CT STPS40L15CT Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5
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