STPS40L40CT

® STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n A1 K A2 2 x 20 A 40 V 150 °C 0.49 V n n LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHE CAPABILITY SPECIFIED A1 K A2 A2 K A1 TO-220AB STPS40L40CT TO-247 STPS40L40CW DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-220AB and TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 130°C δ = 0.5 Per diode Per device Value 40 30 20 40 230 2 3 8100 - 65 to + 150 150 10000 Unit V A A A A A W °C °C V/µs tp = 10 ms Sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/5 July 2003 - Ed: 7A STPS40L40CT/CW THERMAL RESISTANCES Symbol Rth (j-c) Rth(c) Parameter Junction to case Per diode Total Coupling Value 1.5 0.8 0.1 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min. Typ. 30 VR = VRRM IF = 20 A IF = 20 A IF = 40 A IF = 40 A 0.6 0.42 Max. 0.8 70 0.53 0.49 0.69 0.7 Unit mA mA V To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0105 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). 16 14 12 10 8 6 4 2 0 0 2 4 6 8 IF(av) (A) δ=tp/T T Fig. 2: Average current versus temperature (δ = 0.5, per diode). 22 20 18 16 14 12 10 8 6 4 2 0 IF(av)(A) Rth(j-a)=Rth(j-c) ambient PF(av)(W) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 δ=1 Rth(j-a)=15°C/W T tp δ=tp/T tp Tamb(°C) 50 75 100 125 150 10 12 14 16 18 20 22 24 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/5 STPS40L40CT/CW Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 250 225 200 175 150 125 100 75 IM 50 25 0 1E-3 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 Single pulse δ = 0.5 Tc=25°C Tc=75°C Tc=125°C t δ = 0.2 δ = 0.1 T δ=0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-4 1E-3 tp(s) 1E-2 δ=tp/T tp 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) Tj=150°C Tj=125°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 5.0 F=1MHz Tj=25°C 5E+2 1E+2 1E+1 1.0 Tj=75°C 1E+0 1E-1 1E-2 Tj=25°C VR(V) 0 5 10 15 20 25 30 35 40 VR(V) 0.1 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 200 100 Typical values Tj=150°C 10 Tj=125°C Tj=75°C Tj=25°C 1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 3/5 STPS40L40CT/CW PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. n n n COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55M.N MAXIMUM TORQUE VALUE : 0.70 M.N 4/5 STPS40L40CT/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 n n n COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.8M.N MAXIMUM TORQUE VALUE : 1.0M.N Ordering type Marking Package TO-220AB TO-247 Weight 2g 4.4g Base qty 50 30 Delivery mode Tube Tube STPS40L40CT STPS40L40CT STPS40L40CW STPS40L40CW n EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5