STPS40M120C
Datasheet
120 V power Schottky rectifier
Features
A1
K
A2
K
A2
A1
•
•
•
•
High current capability
Avalanche rated
Low forward voltage drop current
High frequency operation
•
ECOPACK®2 compliant
Applications
TO-220AB
•
•
•
•
•
Switching diode
SMPS
DC/DC converter
LED lighting
Notebook adapter
Description
This Schottky rectifier is suited for high frequency switch mode power supply.
The voltage drop versus leakage current trade-off is in keeping with medium power
hi-density adapter design.
Product status link
Packed in TO-220AB, the STPS40M120C is optimized for use in notebook, game
station and desktop adaptors, providing in these applications a good efficiency at
both low and high load.
STPS40M120C
Product summary
Symbol
Value
IF(AV)
2 x 20 A
VRRM
120 V
Tj (max.)
150 °C
VF (typ.)
0.61 V
DS8939 - Rev 3 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STPS40M120C
Characteristics
1
Characteristics
Table 1. Absolute Ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
120
V
IF(RMS)
Forward rms current
30
A
TC = 130 °C
Per diode
20
TC = 120 °C
Per device
40
IF(AV)
Average forward current, δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
PARM
Repetitive peak avalanche power
tp = 10 µs , Tj = 125 °C
1600
W
-65 to +175
°C
150
°C
Tstg
Storage temperature range
Tj
Maximum operating junction temperature(1)
A
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameters
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Value
Per diode
1.10
Total
0.80
Unit
°C/W
0.50
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
For more information, please refer to the following application note :
•
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (per diode)
Symbol
IR (1)
VF (2)
Parameter
Reverse leakage current
Forward voltage drop
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Min.
Typ.
Max.
Unit
-
75
370
µA
-
25
70
mA
Tj = 125 °C
IF = 5 A
-
0.44
0.49
Tj = 125 °C
IF = 10 A
-
0.52
0.57
Tj = 25 °C
Tj = 125 °C
IF = 20 A
-
0.79
0.61
V
0.67
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation: P = 0.54 x IF(AV) + 0.0065 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
DS8939 - Rev 3
page 2/9
STPS40M120C
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (per diode)
20
PF(AV) (W)
Figure 2. Average forward current versus ambient
temperature (δ = 0.5, per diode)
24
IF(AV)(A)
δ=0.5
Rth(j-a)=Rth(j-c)
δ=1
20
16
δ=0.2
16
δ=0.1
12
δ=0.05
12
8
8
T
T
4
4
IF(AV)( A)
Tamb (°C)
tp
δ =tp/T
tp
δ =tp/T
0
0
0
4
8
12
16
20
24
28
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
1
PARM (t p )
PARM (10 µs)
0
25
50
75
100
125
150
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration
1.0
Zth(j-c)/ Rth(j-c)
0.9
0.8
0.7
0.1
0.6
0.5
0.4
0.3
0.01
0.2
0.1
0.001
t p(µs)
1
DS8939 - Rev 3
10
Single pulse
t p (s)
0.0
100
1000
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
page 3/9
STPS40M120C
Characteristics (curves)
Figure 5. Reverse leakage current versus reverse voltage
applied (typical values, per diode)
Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode)
IR (mA)
1.E+03
10000
1.E+02
C(pF)
F=1 MHz
Vosc=30 mVRMS
Tj=25 °C
Tj=150 °C
1.E+01
Tj=125 °C
Tj=100 °C
1.E+00
1000
Tj=75 °C
Tj=50 °C
1.E-01
Tj=25 °C
1.E-02
V R (V)
VR (V)
100
1.E-03
0
10
20
30
40
50
60
70
80
90
100
110
1
120
10
100
1000
Figure 7. Forward voltage drop versus forward current (per diode)
IF (A)
1000.0
Tj=125 °C
Maximum values
100.0
Tj=125 °C
Typical values
10.0
Tj=25 °C
Maximum values
1.0
V (V)
F
0.1
0.0
DS8939 - Rev 3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
page 4/9
STPS40M120C
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
2.1
TO-220AB package information
•
•
•
•
Epoxy meets UL 94,V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 N·m
Maximum torque value: 0.70 N·m
Figure 8. TO-220AB package outline
DS8939 - Rev 3
page 5/9
STPS40M120C
TO-220AB package information
Table 4. TO-220AB package mechanical data
Dimensions
Ref.
Millimeters
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.240
0.035
b1
1.14
1.55
0.045
0.061
c
0.48
0.70
0.019
0.028
D
15.25
15.75
0.600
0.620
D1
DS8939 - Rev 3
Inches (for reference only)
1.27 typ.
0.050 typ.
E
10.00
10.40
0.394
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.195
0.203
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.260
J1
2.40
2.72
0.094
0.107
L
13.00
14.00
0.512
0.551
L1
3.50
3.93
0.138
0.155
L20
16.40 typ.
0.646 typ.
L30
28.90 typ.
1.138 typ.
θP
3.75
3.85
0.148
0.152
Q
2.65
2.95
0.104
0.116
page 6/9
STPS40M120C
Ordering information
3
Ordering information
Table 5. Ordering information
DS8939 - Rev 3
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STPS40M120CT
PS40M120CT
TO-220AB
1.95 g
50
Tube
page 7/9
STPS40M120C
Revision history
Table 6. Document revision history
DS8939 - Rev 3
Date
Version
Changes
02-Apr-2012
1
First issue.
27-Jun-2018
2
Updated Table 1. Absolute Ratings (limiting values, per diode, at 25 °C, unless
otherwise specified) and Figure 3. Normalized avalanche power derating
versus pulse duration (Tj = 125 °C). Removed TO-220AB narrow leads and
I2PAK package information.
13-Nov-2018
3
Updated Table 5.
page 8/9
STPS40M120C
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS8939 - Rev 3
page 9/9
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