STPS6045CP_03

® STPS6045CP/CPI/CW POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2x30 A VRRM Tj (max) VF (max) 45 V 175 °C 0.63 V A1 K A2 K A1 A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: TOP-3I Insulating voltage = 2500VRMS Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED s s s s s s Insulated TOP-3I STPS6045CPI DESCRIPTION Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged either in SOT-93, TOP-3I or TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 SOT-93 TO-247 TOP-3I IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive Peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage A2 A1 K A1 K A2 SOT-93 STPS6045CP TO-247 STPS6045CW Value 45 60 Tc = 150°C Tc = 130°C Per diode Per device 30 60 400 1 3 10600 - 65 to + 175 175 10000 Unit V A A tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C A A A W °C °C V/µs dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/5 July 2003 - Ed: 7B STPS6045CP/CPI/CW THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter SOT-93 / TO-247 TOP-3I Rth (c) Per diode Total Per diode Total Value 0.95 0.55 1.8 1.1 0.15 0.4 Unit °C/W SOT-93 / TO-247 Coupling TOP-3I When the diodes 1 and 2 are used simultaneously: ∆ TJ(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : ** tp = 380 µs, δ < 2% Min. Typ. 20 VR = VRRM IF = 30 A IF = 60 A IF = 60 A 0.68 0.53 Max. 500 80 0.63 0.84 0.78 Unit µA mA V To evaluate the conduction losses use the following equation: P = 0.48 x IF(AV) + 0.005 IF2(RMS) Fig. 1: Average forward power dissipation Fig. 2: Average current versus ambient versus average forward current (per diode). temperature ( δ =0.5, per diode). PF(av)(W) 25 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 IF(av)(A) 35 30 δ=1 Rth(j-a)=Rth(j-c) SOT-93 TO-247 20 15 10 25 20 15 Rth(j-a)=10°C/W TOP-3I T 10 5 tp T 5 IF(av) (A) 0 0 5 10 15 20 25 δ=tp/T δ=tp/T tp Tamb(°C) 50 75 100 125 150 175 30 35 40 0 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/5 STPS6045CP/CPI/CW Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (SOT-93 and TO-247). IM(A) 350 300 250 200 Tc=75°C Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TOP-3I). IM(A) 250 200 150 Tc=75°C 150 100 IM Tc=100°C Tc=125°C 100 50 IM t Tc=100°C Tc=125°C δ=0.5 50 0 1E-3 t δ=0.5 t(s) 1E-2 1E-1 1E+0 t(s) 1E-2 1E-1 1E+0 0 1E-3 Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(µA) 1E+5 Tj=150°C Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 δ = 0.2 δ = 0.5 1E+4 1E+3 1E+2 T δ = 0.1 Single pulse Tj=125°C Tj=100°C Tj=75°C Tj=50°C 0.2 1E+1 tp Tj=25°C 0.0 1E-4 tp(s) 1E-3 1E-2 δ=tp/T 1E+0 1E-1 1E+0 0 5 10 15 20 25 VR(V) 30 35 40 45 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). C(nF) 5.0 F=1MHz Tj=25°C IFM(A) 200 100 Typical values Tj=125°C Tj=25°C 1.0 10 Tj=125°C VR(V) 0.1 1 2 5 10 20 50 1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/5 STPS6045CP/CPI/CW PACKAGE MECHANICAL DATA SOT-93 DIMENSIONS REF. A C D D1 E F F3 F4 G H L L2 L3 L5 L6 O Millimeters Min. 4.70 1.90 0.50 1.10 1.75 2.10 10.80 14.70 18.0 3.95 31.00 4.00 Typ. Inches Max. Min. Typ. Max. 4.90 1.185 0.193 2.10 0.075 0.083 0.098 0.078 0.78 0.020 0.031 1.30 0.043 0.051 0.069 0.083 11.10 0.425 0.437 15.20 0.279 0.598 12.20 0.480 16.20 0.638 0.709 4.15 0.156 0.163 1.220 4.10 0.157 0.161 2.50 2.00 PACKAGE MECHANICAL DATA TOP-3I (isolated) DIMENSIONS REF. A B C D E F G H J K L P R Millimeters Min. 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 4.60 Typ. Max. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40 Min. 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.213 0.134 0.161 0.047 0.181 Inches Typ. Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.222 0.144 0.164 0.055 4/5 STPS6045CP/CPI/CW PACKAGE MECHANICAL DATA TO-247 V DIMENSIONS REF. Millimeters Max. 5.15 2.60 0.80 1.40 2.40 3.40 15.75 20.15 4.30 14.80 3.00 3.65 Inches Min. Typ. Max. 0.191 0.203 0.086 0.102 0.015 0.031 0.039 0.055 0.118 0.078 0.078 0.094 0.118 0.133 0.429 0.608 0.620 0.781 0.793 0.145 0.169 0.728 0.559 0.582 1.362 0.216 0.078 0.118 5° 60° 0.139 0.143 Min. Typ. A 4.85 D 2.20 E 0.40 F 1.00 F1 3.00 F2 2.00 F3 2.00 F4 3.00 G 10.90 H 15.45 L 19.85 L1 3.70 L2 18.50 L3 14.20 L4 34.60 L5 5.50 M 2.00 V 5° V2 60° Dia. 3.55 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Type STPS6045CP STPS6045CPI STPS6045CW s Marking STPS6045CP STPS6045CPI STPS6045CW Package SOT-93 TOP-3I TO-247 Weight 3.97 g. 4.46 g. 4.36 g. Base qty 30 120 30 Delivery mode Tube Bulk Tube s s s Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5