0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
STPS60H100CT

STPS60H100CT

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-220-3

  • 描述:

    DIODE ARRAY SCHOTTKY 100V TO220

  • 数据手册
  • 价格&库存
STPS60H100CT 数据手册
STPS60H100C Datasheet 100 V power Schottky rectifier A1 A2 Features K K A1 TO-220AB K • • • • • High junction temperature capability Low leakage current Low thermal resistance High frequency operation Avalanche capability • ECOPACK®2 compliant A2 Applications • • • • • Switching diode SMPS DC/DC converter Telecom power Desktop power supply Description This dual diode common cathode Schottky rectifier is suited for high frequency switched mode power supplies. Packaged in TO-220AB, the STPS60H100C is optimized for use to enhance the reliability of the application. Product status STPS60H100C Product summary IF(AV) 2 x 30 A VRRM 100 V Tj(max.) 175 °C VF(typ.) 0.67 V DS3978 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS60H100C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 60 A Tc = 150 °C Per diode 30 Tc = 140 °C Per device 60 IF(AV) Average forward current, δ = 0.5, square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 300 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 1300 W -65 to +175 °C +175 °C Tstg Tj Storage temperature range Maximum operating junction temperature (1) A 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Max. value Per diode 1.0 Total 0.7 Unit °C/W 0.4 °C/W When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol IR (1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF (2) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 30 A IF = 60 A Min. Typ. Max. Unit - 2 10 µA - 3 10 mA - 0.84 0.67 - 0.72 0.98 0.80 V 0.84 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp =380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.6 x IF(AV) + 0.004 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS3978 - Rev 3 page 2/9 STPS60H100C Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) PF(AV)(W) 26 IF(AV) (A) δ=0.2 δ=0.1 24 22 35 δ=0.5 Rth(j-a)=Rth(j-c) δ=0.05 δ=1.0 20 30 25 18 16 20 14 12 15 10 Rth(j-a)=15°C/W 8 10 T T 6 5 4 IF(AV) (A) 2 δ=tp/T 0 0 5 10 15 20 25 30 δ=tp/T tp 35 Figure 3. Normalized avalanche power derating versus pulse duration (Tj= 125 °C) 1 T amb (°C) tp 0 0 25 50 75 100 125 150 175 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Z th(j-c) / R th(j-c) PARM (t p ) PARM (10 µs) 1.0 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 0.2 0.001 0.1 t p(µs) 1 DS3978 - Rev 3 10 100 1000 t p(s) Single pulse 0.0 1.E-03 1.E-02 1.E-01 1.E+00 page 3/9 STPS60H100C Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) C(nF) I R (mA) 1.E+02 Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) 10.0 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C Tj = 150 °C 1.E+01 Tj = 125 °C 1.E+00 Tj = 100 °C 1.E-01 1.0 Tj = 75 °C 1.E-02 Tj = 50 °C 1.E-03 Tj = 25 °C VR(V) 1.E-04 0 10 20 30 40 VR(V) 0.1 50 60 70 80 90 100 1 10 100 Figure 7. Forward voltage drop versus forward current (per diode) IF (A) 100 Tj = 125 °C (maximum values) Tj = 125 °C (typical values) 10 Tj = 25 °C (maximum values) VF(V) 1 0.0 DS3978 - Rev 3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 page 4/9 STPS60H100C Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220AB package information • • • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.70 N·m Figure 8. TO-220AB package outline DS3978 - Rev 3 page 5/9 STPS60H100C TO-220AB package information Table 4. TO-220AB package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.240 0.035 b1 1.14 1.55 0.045 0.061 c 0.48 0.70 0.019 0.028 D 15.25 15.75 0.600 0.620 D1 DS3978 - Rev 3 Inches (for reference only) 1.27 typ. 0.050 typ. E 10.00 10.40 0.394 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.260 J1 2.40 2.72 0.094 0.107 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L20 16.40 typ. 0.646 typ. L30 28.90 typ. 1.138 typ. θP 3.75 3.85 0.148 0.152 Q 2.65 2.95 0.104 0.116 page 6/9 STPS60H100C Ordering information 3 Ordering information Table 5. Order code DS3978 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode STPS60H100CT STPS60H100CT TO-220AB 1.95 g 50 Tube page 7/9 STPS60H100C Revision history Table 6. Document revision history DS3978 - Rev 3 Date Revision Changes 02-Aug-2004 1 First issue. 07-Feb-2007 2 Reformatted to current standards. Added ECOPACK statement on page 5. Corrected typographical errors on pages 1 and 3. 09-Aug-2018 3 Updated Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) and Figure 3. Normalized avalanche power derating versus pulse duration (Tj= 125 °C). page 8/9 STPS60H100C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS3978 - Rev 3 page 9/9
STPS60H100CT 价格&库存

很抱歉,暂时无法提供与“STPS60H100CT”相匹配的价格&库存,您可以联系我们找货

免费人工找货
STPS60H100CT
  •  国内价格
  • 1+19.45080
  • 10+16.79400
  • 50+15.13080

库存:20