®
STPS60L30CW
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
n n n n n n
2 x 30 A 30 V 150 °C 0.38 V
A2
K
VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED TO247
A2 K A1
DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO247, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise reverse voltage Tc = 130°C δ = 0.5 Per diode Per device
Value 30 50 30 60 600 2 11000 - 65 to + 150 150 10000
Unit V A A A A W °C °C V/µs
tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz square tp = 1µs Tj = 25°C
*:
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a )
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July 2003 - Ed: 3A
STPS60L30CW
THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Parameter Junction to case Per diode Total Coupling Value 0.8 0.45 0.1 Unit °C/W °C/W
When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
Min.
Typ. 250
VR = VRRM IF = 30 A IF = 30 A IF = 60 A IF = 60 A 0.45 0.33
Max. 4 500 0.46 0.38 0.55 0.5
Unit mA mA V
To evaluate the conduction losses use the following equation : P = 0.26x IF(AV) + 0.004 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 18 16 14 12 10 8 6 4 2 0 0 5 10 15 IF(av) (A) 20 25 30
δ=tp/T
tp T
δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1
Fig. 2: Average forward current versus ambient temperature (δ=0.5) (per diode).
IF(av)(A) 35 30 25 20 15 10 5
δ=tp/T
T
Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c)
tp
Tamb(°C) 50 75 100 125 150
35
40
0
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
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STPS60L30CW
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode).
IM(A) 500 450 400 350 300 250 200 150 100 IM 50 0 1E-3
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
1.0 0.8 0.6 0.4
Zth(j-c)/Rth(j-c)
Tc=25°C Tc=75°C Tc=125°C
t
δ=0.5
δ=0.2
T
0.2
δ=0.1
δ=0.5
t(s) 1E-2 1E-1 1E+0
Single pulse
tp(s) 1E-2
δ=tp/T
tp
0.0 1E-4
1E-3
1E-1
1E+0
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values) (per diode).
IR(mA) 2E+3 1E+3
Tj=150°C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode).
C(nF) 10
F=1MHz Tj=25°C
1E+2
Tj=125°C
5
1E+1 1E+0
2
1E-1 1E-2 0 5 10
Tj=25°C
VR(V) 15 20 25 30
VR(V) 1 1 2 5 10 20 50
Fig. 9: Forward voltage drop versus forward current (maximum values - per diode).
IFM(A) 200 100
Tj=150°C (typical values)
Tj=25°C
Tj=125°C
10
VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
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STPS60L30CW
PACKAGE MECHANICAL DATA TO247 DIMENSIONS
V
REF.
Millimeters
Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143
Min. Typ. Max. Min. Typ. Max.
V Dia.
H
A
L5
L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3
F1
L1 D
A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139
n n n
Cooling method: C Recommended torque value: 0.8 m.N Maximum torque value: 1 m.N
Ordering type STPS60L30CW
n
Marking STPS60L30CW
Package TO247
Weight 4.36g
Base qty 30
Delivery mode Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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