STPS640CBY-TR

STPS640C-Y Automotive power Schottky rectifier Datasheet − production data Description A1 K A2 K This dual Schottky rectifier is designed for switch mode power supplies and other power converters. This device is intended for use in low and medium voltage operation, and in particular high frequency circuits where low switching losses are required (free wheeling and polarity protection) in automotive applications. A2 Table 1. Device summary A1 DPAK STPS640CBY-TR Features • Low forward voltage drop Symbol Value IF(AV) 2x3A VRRM 40 V Tj 150 °C VF (Typ) 0.50 V • Very small conduction losses • Negligible switching losses • Extremely fast switching • Low thermal resistance • AEC-Q101 qualified. December 2013 This is information on a product in full production. DocID025068 Rev 2 1/8 www.st.com Characteristics 1 STPS640C-Y Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Value Unit 40 V 6 A per diode 3 per device 6 IF(AV) Average forward current, δ = 0.5, Tc = 135 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C 75 A IRRM Peak repetitive reverse current tp = 2 µs, F = 1kHz 1 A PARM Repetitive peak avalanche power tp = 1 µs, Tc = 25 °C 1300 W Storage temperature range -65 to +150 °C Operating junction temperature -40 to +150 °C Tstg Tj A Table 3. Thermal parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) coupling Value per diode 5.5 per device 3 Unit °C/W 0.5 When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4. Static electrical characteristics (per diode) Symbol IR(1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 3 A Min. Typ Max. Unit - - 100 µA - 2 10 mA - - 0.63 - 0.50 0.57 - - 0.84 - 0.67 0.72 V IF = 6 A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.050 x IF2(RMS) 2/8 DocID025068 Rev 2 STPS640C-Y Characteristics Figure 1. Average forward power dissipation versus average forward current (per diode) PF(AV)(W) 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0.0 δ = 0.2 δ = 0.1 δ = 0.05 Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) 4.0 δ = 0.5 δ=1 3.5 Rth(j-a) = Rth(j-c) 3.0 2.5 2.0 1.5 T IF(AV)(A) 0.5 1.0 1.5 2.0 1.0 tp δ = tp/T 2.5 3.0 Rth(j-a) = 15 °C/W T 3.5 4.0 0.5 tp δ = tp/T 0.0 0 25 Tamb(°C) 50 75 100 125 150 Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating versus pulse duration versus junction temperature 1 PARM(tp) PARM(1µs) PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 tp(µs) 0.1 1 0 10 100 1000 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c)/Rth(j-c) Tj(°C) 25 50 75 100 125 150 Figure 6. Reverse leakage current vs. reverse voltage applied (typical values, per diode) 1E-2 IR(A) Tj = 150 °C 0.8 0.6 0.4 0.2 Tj = 125 °C δ = 0.5 1E-3 δ = 0.2 δ = 0.1 1E-4 Tj = 100 °C T Single pulse 0.0 1E-3 tp(s) 1E-2 δ =tp/T 1E-1 tp 1E+0 1E-5 Tj = 75 °C VR(V) 0 DocID025068 Rev 2 5 10 15 20 25 30 35 40 3/8 8 Characteristics STPS640C-Y Figure 7. Junction capacitance vs. reverse voltage applied (typical values, per diode) 500 Figure 8. Forward voltage drop vs. forward current (per diode) C(pF) 10.0 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C IFM(A) Tj = 150°C (typical values) Tj = 25°C (maximum values) 100 1.0 VR(V) 10 1 2 5 10 20 VFM(V) 0.1 0.0 50 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 9. Thermal resistance junction to ambient versus copper surface under tab 80 Rth(j-a)(°C/W) 70 Epoxy printed circuit board Fr4, copper thickness = 35 µm 60 50 40 30 20 10 S(Cu)(cm²) 0 0 4/8 4 8 12 16 20 24 28 DocID025068 Rev 2 32 36 40 STPS640C-Y 2 Package information Package information • Epoxy meets UL94,V0 • Lead-free packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 10. DPAK dimension definitions E A B2 C2 L2 D R H L4 A1 B G R C A2 0.60 MIN. V2 DocID025068 Rev 2 5/8 8 Package information STPS640C-Y Table 5. DPAK dimension values Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° Figure 11. Footprint dimensions in mm (inches) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 6/8 Max. DocID025068 Rev 2 STPS640C-Y 3 Ordering information Ordering information Table 6. Ordering information 4 Order code Marking Package STPS640CBY-TR STPS640CY DPAK Weight Base qty Delivery mode 0.3 g 2500 Tape and reel Revision history Table 7. Revision history Date Revision Changes 6-Nov-2013 1 First issue 04-Dec-2013 2 Properties changed from preliminary data to production data. DocID025068 Rev 2 7/8 8 STPS640C-Y Please Read Carefully: Information in this document is provided solely in connection with ST products. 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