STPS640CT

STPS640C Power Schottky rectifier Main product characteristics IF(AV) VRRM Tj (max) VF(max) A1 K A2 2x3A 40 V 150° C 0.57 V K A2 Features and benefits ■ ■ ■ ■ ■ ■ ■ A1 A1 A2 K Very small conduction losses Negligible switching losses Extremely fast switching Low forward drop voltage Low capacitance Low thermal resistance Insulated package: TO-220FPAB Insulating voltage = 2000 V DC Capacitance = 12 pF Avalanche capability specified DPAK STPS640CB TO-220AB STPS640CT A2 K A1 TO-220FPAB STPS640CFP ■ Description Dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters. This device is intended for use in low and medium voltage operation, and particulary, in high frequency circuitries where low switching losses are required (free wheeling and polarity protection). March 2007 Rev 7 1/9 www.st.com 9 Characteristics STPS640C 1 Characteristics Table 1. Symbol VRRM Absolute ratings (limiting values, per diode) Parameter Repetitive peak reverse voltage TO-220AB /TO-220FPAB DPAK TO-220AB Tc = 135° C Tc = 130° C Tc = 120° C 75 1 1300 -65 to + 150 150 10000 A A W °C °C V/µs 3 A TO-220FPAB DPAK Value 40 10 6 Unit V A IF(RMS) RMS forward voltage IF(AV) Average forward current δ = 0.5 Surge non repetitive forward current Repetitive peak reverse current Storage temperature range IFSM IRRM PARM Tstg Tj dV/dt tp = 10 ms Sinusoidal tp = 2 µs square F = 1 kHz Repetitive peak avalanche power tp = 1 µs Tj = 25° C Maximum operating junction temperature Critical rate of rise of reverse voltage Table 2. Symbol Thermal resistances Parameter TO-220AB / DPAK Per diode Total Per diode Total Value 5.5 3 5.5 5.2 0.5 3 Unit Rth (j-c) Junction to case TO-220FPAB °C/W Rth(c) Coupling TO-220AB TO-220FPAB °C/W When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics (per diode) Parameter Reverse leakage current Test Conditions Tj = 25° C Tj = 125° C Tj = 25° C Tj = 25° C Tj = 125° C Tj = 125° C VR = VRRM IF = 3 A IF = 6 A IF = 3 A IF = 6 A 0.5 0.67 Min. Typ. Max. 100 2 10 0.63 0.84 0.57 0.72 V Unit µA mA VF(1) Forward voltage drop 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.050 IF2(RMS) 2/9 STPS640 Characteristics Figure 1. Average forward power dissipation versus average forward current (per diode) δ = 0.1 δ = 0.2 Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) PF(AV)(W) 2.50 2.25 2.00 3.0 4.0 IF(AV)(A) δ = 0.05 δ = 0.5 3.5 Rth(j-a)=Rth(j-c) TO-220AB / DPAK 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0.0 0.5 1.0 1.5 δ=1 2.5 TO-220FPAB 2.0 1.5 T Rth(j-a)=15°C/W 1.0 0.5 tp T IF(AV)(A) 2.0 2.5 δ=tp/T 3.0 3.5 0.0 δ=tp/T 0 25 tp Tamb(°C) 50 75 100 125 150 4.0 Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature PARM(tp) PARM(1µs) 1 1.2 1 0.1 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 PARM(tp) PARM(25°C) 0.01 tp(µs) 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 Figure 5. Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (TO-220AB / DPAK) Figure 6. Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (TO-220FPAB) IM(A) 45 40 35 30 25 TC=75°C IM(A) 40 35 30 25 20 15 10 5 0 1E-3 IM t TC=75°C TC=100°C 20 TC=100°C 15 10 5 0 1E-3 IM t TC=135°C TC=130°C δ=0.5 t(s) 1E-2 1E-1 1E+0 δ=0.5 t(s) 1E-2 1E-1 1E+0 3/9 Characteristics STPS640C Figure 7. Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AB/DPAK) Figure 8. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 Zth(j-c)/Rth(j-c) 1.0 0.8 δ = 0.5 0.8 0.6 0.6 δ = 0.5 0.4 δ = 0.2 δ = 0.1 0.4 δ = 0.2 T 0.2 Single pulse 0.2 δ = 0.1 T tp(s) 1E-2 1E-1 0.0 1E-3 δ=tp/T tp Single pulse tp(s) 1E-2 1E-1 1E+0 0.0 1E-3 δ=tp/T 1E+0 tp 1E+1 Figure 9. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 500 IR(A) 1E-2 Tj=150°C F=1MHz VOSC=30mVRMS Tj=25°C Tj=125°C 1E-3 100 Tj=100°C 1E-4 Tj=75°C VR(V) 1E-5 0 5 10 15 20 25 30 35 40 VR(V) 10 1 2 5 10 20 50 Figure 11. Forward voltage drop versus forward current (maximum values, per diode) Figure 12. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) Rth(j-a)(°C/W) 80 70 IFM(A) 10.0 Tj=150°C (typical values) 60 Tj=25°C 50 40 30 20 10 1.0 0.1 0.0 0.1 0.2 0.3 0.4 VFM(V) 0.5 0.6 0.7 0.8 0.9 1.0 S(Cu)(cm²) 0 4 8 12 16 20 24 28 32 36 40 0 4/9 STPS640 Package information 2 Package information ● ● ● ● Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm Maximum torque value: 0.70 Nm TO-220FPAB dimensions Dimensions Ref Millimeters Min. A A H B Table 4. Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 B D E Dia L6 L2 L3 L5 F1 L4 F2 D L7 F F1 F2 G G1 H L2 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 E L3 L4 G L5 L6 L7 Dia. 5/9 Package information Table 5. DPAK dimensions Dimensions Ref Millimeters Min. A E B2 C2 L2 A STPS640C Inches Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 A1 A2 B D B2 C C2 H L4 B G A1 R R C D E A2 0.60 MIN. G H V2 L2 L4 V2 0.80 typ. 0.60 0° 1.00 8° 0.031 typ. 0.023 0° 0.039 8° Figure 13. Footprint (dimensions in millimeters) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 6/9 STPS640 Table 6. TO-220AB dimensions Package information Dimensions Ref Millimeters Min. A H2 Dia L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information STPS640C 3 Ordering information Ordering type STPS640CT STPS640CB STPS640CB-TR STPS640CFP Marking STPS640CT S640C S640C STPS640CFP Package TO-220AB DPAK DPAK TO-220FPAB Weight 2.20 g 0.30 g 0.30 g 2.08 g Base qty 50 75 2500 50 Delivery mode Tube Tube Tape and reel Tube 4 Revision history Date Aug-2003 22-Mar-2007 Revision 6B 7 Last release. Removed ISOWATT package. Description of Changes 8/9 STPS640 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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