STPS660CSFY
Datasheet
Automotive 60 V, dual 3 A power Schottky rectifier
Features
•
•
•
•
AEC-Q101 qualified
PPAP capable
175 °C maximum operation junction temperature
VRRM guaranteed from -40 °C to 175 °C
•
•
High surge current capability
ECOPACK2 compliant component
Application
•
•
•
Reverse polarity protection in E.C.U
DC/DC converters
Freewheeling diodes
Description
The STPS660CSFY has been developed for applications requiring an optimized VF
and leakage current characteristics.
These characteristics make it ideal for use in secondary rectification functions, such
as DC/DC converters or freewheeling functions.
Product status link
STPS660CSFY
Product summary
Symbol
Value
IF(AV)
2X3A
VRRM
60 V
Tj (max.)
175 °C
VF (typ.)
0.50 V
DS13525 - Rev 1 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STPS660CSFY
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
60
V
VRRM
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
IF(AV)
Average forward current, δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
120
A
PARM
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
170
W
Storage temperature range
-65 to +175
°C
Operating junction temperature range(1)
-40 to +175
°C
Tstg
Tj
Per diode
Tc = 160 °C
3
Per device
Tc = 160 °C
6
A
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameters
Symbol
Rth(j-c)
Parameter
Typ.
Unit
1.5
°C/W
Junction to case total
For more information, please refer to the following application note:
•
AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (per diode)
Symbol
IR(1)
Parameter
Reverse leakage current
Test conditions
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF(2)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 3 A
IF = 4 A
IF = 6 A
Min.
Typ.
-
Max.
Unit
19
µA
mA
-
3
10
-
0.56
0.61
-
0.50
0.57
-
0.60
0.65
-
0.53
0.60
-
0.67
0.74
-
0.58
0.66
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.37 x IF(AV) + 0.067 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses:
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses in a power diode
DS13525 - Rev 1
page 2/9
STPS660CSFY
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward current versus case
temperature (δ = 0.5, per diode)
Figure 2. Relative variation of thermal impedance junction
to case versus pulse duration
Zth(j-c) /Rth(j-c)
IF(AV)(A)
20
1.0
0.9
0.8
15
0.7
0.6
10
0.5
0.4
5
0.3
T
0.2
δ=tp/T
Single pulse
t P(s)
0.1
T c(°C)
tp
0
0.0
0
25
50
75
100
125
150
175
Figure 3. Reverse leakage current versus reverse voltage
applied (typical values, per diode)
1.E+01
1.E-04
1.E-03
1.E-02
1.E-01
Figure 4. Junction capacitance versus reverse voltage
applied (typical values, per diode)
IR(mA)
C(pF)
1000
Tj = 150 °C
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
Tj = 125 °C
1.E+00
1.E+00
Tj = 100 °C
1.E-01
Tj = 75 °C
100
1.E-02
Tj = 50 °C
1.E-03
Tj = 25 °C
VR(V)
1.E-04
0
VR(V)
10
5
10
15
20
25
30
35
40
45
50
55
60
Figure 5. Forward voltage drop versus forward current
(typical values, per diode)
1
10
100
Figure 6. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
PARM (t p )
PARM (10 µs)
IF(A)
10.0
1
Tj = 25 °C
0.1
Tj = 75 °C
1.0
Tj = 125 °C
Tj = 150 °C
0.01
Tj = -40 °C
VF(V)
0.1
0.0
0.1
DS13525 - Rev 1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.001
t p(µs)
1
10
100
1000
page 3/9
STPS660CSFY
Characteristics (curves)
Figure 7. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy
printed board FR4, eCu = 70 µm) (PSMC (TO-277A))
Rth(j-a)(°C/W)
120
Epoxy printed circuit board, copper thickness = 70 µm
PSMC (TO-277A)
100
80
60
40
20
SCU(cm²)
0
0
DS13525 - Rev 1
1
2
3
4
5
6
7
8
9
10
page 4/9
STPS660CSFY
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1
PSMC (TO-277A) package information
•
•
Epoxy meets UL94,V0
Cooling method : by conduction (C)
Figure 8. PSMC (TO-277A) package outline
DS13525 - Rev 1
page 5/9
STPS660CSFY
PSMC (TO-277A) package information
Table 4. PSMC (TO-277A) package mechanical data
Dimensions
Millimeters
Ref.
Inches (for reference only)
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.00
1.10
1.20
0.039
0.043
0.047
b
1.05
1.20
1.35
0.041
0.047
0.053
b2
1.90
2.05
2.20
0.075
0.081
0.087
b4
0.75
0.029
C
0.15
0.23
0.40
0.006
0.009
0.016
D
4.45
4.60
4.75
0.175
0.181
0.187
D1
4.25
4.40
4.45
0.167
0.173
0.175
D2
3.40
3.60
3.70
0.134
0.142
0.146
E
6.35
6.50
6.65
0.250
0.256
0.262
E1
6.05
6.10
6.15
0.238
0.240
0.242
E2
4.50
4.60
4.70
0.177
0.181
0.185
E3
3.94
1.55
e
2.13
0.084
e1
3.33
0.131
G
1.20
0.047
G1
0.70
0.027
L
0.90
1.05
1.24
0.035
L4
0.02
0.0008
L5
0.02
0.0008
0.041
0.049
Figure 9. PSMC (TO-277A) package footprint in mm (in inches)
Note:
DS13525 - Rev 1
For package and tape orientation, reel and inner box dimensions and tape outline please check TN1173
page 6/9
STPS660CSFY
Ordering information
3
Ordering information
Table 5. Ordering information
DS13525 - Rev 1
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STPS660CSFY
PS660CY
PSMC (TO-277A)
90 mg
6000
Tape and Reel
page 7/9
STPS660CSFY
Revision history
Table 6. Document revision history
DS13525 - Rev 1
Date
Version
26-Oct-2020
1
Changes
Initial release.
page 8/9
STPS660CSFY
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© 2020 STMicroelectronics – All rights reserved
DS13525 - Rev 1
page 9/9
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