STPS6M100DEE-TR

STPS6M100DEE Datasheet 100 V, 6 A power Schottky rectifier Features • • • • • • Negligible switching losses Extremely fast switching Low thermal resistance Avalanche capacity specified High junction temperature capability ECOPACK2 compliant Application Product status link STPS6M100DEE Product summary Symbol Value IF(AV) 6A VRRM 100 V Tj (max.) 150 °C VF (typ.) 0.58 V • • • • • • • Cordless appliance SSD Battery charger Telecom power DC / DC converter Polarity protection Freewheeling Description This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC converters. Packaged in PowerFLAT, this device is intended for use in low voltage, high frequency, inverters, free-wheeling, by-pass diode and polarity protection applications. Its low profile was especially designed to be used in applications with space-saving constraints. DS9071 - Rev 2 - May 2022 For further information contact your local STMicroelectronics sales office. www.st.com STPS6M100DEE Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 15 A 6 A IF(AV) Average forward current, δ = 0.5 square wave Tc = 130 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 100 A PARM Repetitive peak avalanche power Tc = 125 °C 480 W -65 to +150 °C +150 °C Tstg Tj tp = 10 µs Storage temperature range Maximum operating junction temperature Table 2. Thermal resistance parameters Symbol Rth(j-c) Parameter Junction to case Max. value Unit 4 °C/W Max. Unit 30 µA 15 mA For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 6 A Min. Typ. - 5 - 0.78 0.58 0.64 V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.56 x IF(AV) + 0.0133 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • • DS9071 - Rev 2 AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode page 2/9 STPS6M100DEE Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature(δ = 0.5) IF(AV) PF(AV) (W) 6 7 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Rth(j-a) =Rth(j- c) 6 5 5 4 δ=1 4 3 3 2 T T 2 1 1 IF(AV) (A) tp δ =tp/T 0 0 1 2 3 4 5 6 7 8 Figure 3. Normalized avalanche power derating versus pulse duration PARM (t p ) PARM (10 µs) 1 0 Tamb (°C) tp δ =tp/T 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c) /Rth(j-c) 1.0 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 0.2 0.1 t p(µs) 0.001 1 10 100 t p (s) Single pulse 0.0 1000 Figure 5. Reverse leakage current versus reverse voltage applied (typical values) IR (mA) 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 6. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 1.E+02 F=1 MHz VOSC=30 mVRMS Tj =25 °C Tj = 150 °C 1.E+01 Tj = 125 °C 1.E+00 Tj = 100 °C 100 Tj = 75 °C 1.E-01 Tj = 50 °C 1.E-02 Tj = 25 °C 1.E-03 VR(V) VR (V) 1.E-04 0 DS9071 - Rev 2 10 20 30 40 50 60 70 80 90 10 100 1 10 100 page 3/9 STPS6M100DEE Characteristics (curves) Figure 7. Forward voltage drop versus forward current Figure 8. Thermal resistance junction to ambient versus copper surface under tab IFM (A) 100.0 Rth(j-a) (°C/W) Tj=125 °C (Maximum values) 250 200 Tj=125 °C (Typical values) 10.0 PowerFLAT (3.3x3.3) epoxy printed board FR4, copper thickness=35µm Tj=25 °C (Maximum values) 150 100 1.0 50 VFM (V) SCu (cm²) 0.1 0.0 DS9071 - Rev 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 1 2 3 4 5 6 7 8 9 10 page 4/9 STPS6M100DEE Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 PowerFLAT 3.3x3.3 mm package information Figure 9. PowerFLAT 3.3x3.3 mm package outline Table 4. PowerFLAT 3.3x3.3 mm mechanical data Dimensions Millimeters Ref. Min. A 0.90 A3 DS9071 - Rev 2 Typ. Max. 1.10 0.20 b 0.29 0.44 D 3.20 3.40 D2 1.61 1.82 E 3.20 3.40 E2 2.19 2.39 E3 1.54 1.74 e 0.55 0.75 L 0.30 0.50 L1 0.50 0.70 page 5/9 STPS6M100DEE PowerFLAT 3.3x3.3 mm package information Figure 10. Recommended footprint (dimensions are in mm) DS9071 - Rev 2 page 6/9 STPS6M100DEE Ordering information 3 Ordering information Table 5. Ordering information DS9071 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STPS6H100DEE-TR S6M100 PowerFLAT 3.3 x 3.3 34 mg 3000 Tape and 13" reel page 7/9 STPS6M100DEE Revision history Table 6. Document revision history DS9071 - Rev 2 Date Version Changes 09-Sep-2012 1 First issue. 16-May-2022 2 Updated package outline PowerFLAT 3.3 x 3.3. page 8/9 STPS6M100DEE IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS9071 - Rev 2 page 9/9