STPS80170CWLY

STPS80170C Datasheet 170 V power Schottky rectifier Features A1 K A2 A2 TO-247 K A1 • • • • • • High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Low thermal resistance High frequency operation Avalanche capability • ECOPACK®2 compliant Applications • • • • Switching diode SMPS DC/DC converter Telecom power Description This dual diode common cathode Schottky rectifier is suited for high frequency switched mode power supplies. Packaged in TO-247, the STPS80170C is optimized for use to enhance the reliability of the application. Product status STPS80170C Product summary IF(AV) 2 x 40 A VRRM 170 V Tj(max.) 175 °C VF(typ.) 0.68 V DS4415 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS80170C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) Forward rms current 80 A Tc = 150 °C Per diode 40 Tc = 140 °C Per device 80 IF(AV) Average forward current, δ = 0.5, square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 500 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 2750 W -65 to +175 °C +175 °C Tstg Tj Storage temperature range Maximum operating junction temperature (1) A 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Max. value Per diode 0.7 Total 0.5 Unit °C/W 0.3 °C/W When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol IR (1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF (2) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 40 A IF = 80 A Min. Typ. - 20 - Unit 80 µA 80 mA 0.84 0.68 - Max. 0.74 0.96 0.80 V 0.86 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp =380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.62 x IF(AV) + 0.003 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS4415 - Rev 3 page 2/9 STPS80170C Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) 40 PF(AV)(W) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) 45 δ = 0.1 δ = 0.2 IF(AV)(A) Rth(j-a) = Rth(j-c) δ=1 δ = 0.5 40 35 δ = 0.05 30 35 30 25 25 20 20 15 Rth(j-a) = 15 °C/W 15 10 T IF(AV)(A) δ=tp/T 0 0 5 10 15 20 25 30 35 40 5 tp δ=tp/T 0 45 50 Figure 3. Normalized avalanche power derating versus pulse duration (Tj= 125 °C) 1 T 10 5 PARM (t p ) PARM (10 µs) 0 T amb (°C) tp 25 50 75 100 125 150 175 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c) /Rth(j-c) 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.3 0.01 0.2 0.1 0.001 t p(µs) 1 DS4415 - Rev 3 10 100 1000 Single pulse 0.0 1.E-03 t P(s) 1.E-02 1.E-01 1.E+00 page 3/9 STPS80170C Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+06 IR(µA) Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) 10000 1.E+05 C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 ° C Tj = 150 °C 1.E+04 Tj = 125 °C Tj = 100 °C 1.E+03 1000 Tj = 75 °C 1.E+02 Tj = 50 °C 1.E+01 Tj = 25 °C 1.E+00 VR(V) VR(V) 100 1.E-01 0 Figure 7. Forward voltage drop versus forward current (per diode, low level) 40 1 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 IF (A) 10 100 1000 Figure 8. Forward voltage drop versus forward current (per diode, high level) 100.0 IF (A) 35 Tj = 125 °C (Maximum values) 30 Tj = 125 °C Tj=125°C (Maximum values) 10.0 25 Tj = 125 °C (Typical values) 20 Tj=125°C T j = 125 °C (Typical values) Tj = 25 °C (Maximum values) Tj = 25 °C (Maximum values) 15 1.0 10 5 VF(V) VF (V) 0 0.0 0.1 DS4415 - Rev 3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 page 4/9 STPS80170C Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-247 package_information • • • • Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 N·m Maximum torque value: 1.0 N·m Figure 9. TO-247 package outline Heat-sink plane A E ∅P S ∅R D L2 L1 b1 L b2 1 2 3 b c A1 3 2 1 Back view e DS4415 - Rev 3 page 5/9 STPS80170C TO-247 package information Table 4. TO-247 package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 DS4415 - Rev 3 Typ. Inches (for reference only) 5.45 18.50 0.620 0.215 0.220 0.728 ØP 3.55 3.65 0.139 0.143 ØR 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 5.50 0.216 0.224 page 6/9 STPS80170C Ordering information 3 Ordering information Table 5. Order code DS4415 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode STPS80170CW STPS80170CW TO-247 4.36 g 30 Tube page 7/9 STPS80170C Revision history Table 6. Document revision history DS4415 - Rev 3 Date Revision Changes 16-Sep-2005 1 First issue. 18-Jan-2018 2 Minor text change to improve readability. Updated Section 2.1: "TO-247 package information". 09-Aug-2018 3 Updated Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) and Figure 3. Normalized avalanche power derating versus pulse duration (Tj= 125 °C). page 8/9 STPS80170C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS4415 - Rev 3 page 9/9