STPS80H100CY

® STPS80H100CY HIGH VOLTAGE POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s A1 K A2 2 x 40 A 100 V 175 °C 0.70 V s s s s s s HIGH REVERSE VOLTAGE NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT HIGH TEMPERATURE LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 K A1 Max247 DESCRIPTION Dual center tap Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in Max247, this device is intended for use in high frequency computer and telecom converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 155°C δ = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 100 50 40 80 400 2 39200 - 65 to + 175 175 10000 Unit V A A A A W °C °C V/µs tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 1µs Tj = 25°C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/4 July 2003 - Ed: 2B STPS80H100CY THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% Value 0.7 0.5 0.3 Unit °C/W Min. Typ. 7 Max. 20 20 0.8 0.7 0.94 0.84 Unit µA mA V VR =VRRM IF = 40 A IF = 40 A IF = 80 A IF = 80 A 0.79 0.65 To evaluate the maximum conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0035 x IF2(RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current (per diode). temperature (δ=0.5, per diode). PF(av)(W) 35 30 25 20 15 10 5 0 0 5 10 15 IF(av) (A) 20 25 30 35 δ=tp/T T IF(av)(A) δ = 0.5 δ = 0.2 δ = 0.1 δ=1 δ = 0.05 tp 40 45 50 50 45 40 35 30 25 20 15 10 5 0 Rth(j-a)=Rth(j-c) Rth(j-a)=5°C/W T δ=tp/T tp Tamb(°C) 50 75 100 125 150 175 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/4 STPS80H100CY Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 500 400 Tc=50°C Fig. 6: Relative variation of thermal impedance junction to case versus pulse (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=75°C 300 200 0.6 0.4 δ = 0.5 δ = 0.2 δ = 0.1 Tc=110°C IM T 100 0 1E-3 t 0.2 δ=0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-3 Single pulse tp(s) 1E-2 1E-1 δ=tp/T tp 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(µA) 1E+4 Tj=125°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 5.0 F=1MHz Tj=25°C 1E+3 1E+2 1E+1 1E+0 1E-1 0 10 20 Tj=25°C 1.0 VR(V) 30 40 50 60 70 80 90 100 VR(V) 0.1 1 2 5 10 20 50 100 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 Tj=125°C 100 Tj=25°C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 STPS80H100CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E A Millimeters Min. Max. 5.30 2.60 1.40 2.40 3.40 0.80 10.30 5.55 15.90 15.20 4.30 Inches Min. 0.185 0.087 0.038 0.079 0.118 0.016 0.776 0.211 0.602 0.559 0.146 Max. 0.209 0.102 0.055 0.094 0.133 0.031 0.799 0.219 0.626 0.598 0.169 A A1 b D 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 b1 b2 c L1 A1 L b1 b2 e b c D e E L L1 Ordering type STPS80H100CY s Marking STPS80H100CY Package Max247 Weight 4.4g Base qty 30 Delivery mode Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4