STPS8H100

STPS8H100 High voltage power Schottky rectifier Main product characteristics IF(AV) VRRM Tj VF(max) 8A 100 V 175° C 0.58 V NC K A D2PAK STPS8H100G Features and benefits ■ ■ ■ ■ ■ Negligible switching losses High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Insulated package: – TO-220FPAC Insulating voltage = 2000 V DC Typical package capacitance = 12 pF Avalanche capability specified A K K A TO-220AC STPS8H100D TO-220FPAC STPS8H100FP Order Codes Part Number STPS8H100D Marking STPS8H100D STPS8H100G STPS8H100G STPS8H100FP ■ Description Schottky barrier rectifier designed for high frequency compact Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj Repetitive peak reverse voltage RMS forward voltage Average forward current δ = 0.5 TO-220AC, D PAK DO-15 2 STPS8H100G STPS8H100G-TR STPS8H100FP Absolute ratings (limiting values) Parameter Value 100 30 TC = 165° C TC = 150° C tp = 10 ms sinusoidal tp = 1 µs Tj = 25° C 8 250 10800 -65 to + 175 175 Unit V A A A W Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature °C °C June 2006 Rev 10 1/9 www.st.com 9 Characteristics STPS8H100 1 Table 2. Symbol Rth(j-c) Characteristics Thermal resistance Parameter TO-220AC, D2PAK Junction to case TO-220FPAC 4 Value 1.6 ° C/W Unit Table 3. Symbol IR (1) Static electrical characteristics (per diode) Parameter Reverse leakage current Tests conditions Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C VR = VRRM Min. Typ Max. 4.5 2 6.0 0.71 IF = 8 A 0.56 0.58 0.77 IF = 1 0 A V 0.59 0.64 0.81 IF = 1 6 A 0.65 0.68 Unit µA mA VF (2) Forward voltage drop Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C 1. tp = 5 ms, δ < 2% 2. tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.48 x IF(AV) + 0.0125 IF2(RMS) Figure 1. Average forward power dissipation versus average forward current Figure 2. Normalized avalanche power derating versus pulse duration PF(av)(W) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 1 PARM(tp) PARM(1µs) δ=1 0.1 T 0.01 IF(av) (A) 0 1 2 3 4 5 6 7 δ=tp/T tp 0.001 tp(µs) 0.1 1 10 100 1000 8 9 10 0.01 2/9 STPS8H100 Characteristics Figure 3. Normalized avalanche power derating versus junction temperature Figure 4. Average forward current versus ambient temperature, δ = 0.5, (TO-220AC, D2PAK) PARM(tp) PARM(25°C) 1.2 1 0.8 0.6 0.4 0.2 IF(av)(A) 10 Rth(j-a)=Rth(j-c) 8 6 4 T Rth(j-a)=15°C/W 2 Tj(°C) =t δ p/T tp 0 25 50 75 100 125 150 0 Tamb(°C) 60 80 100 120 140 160 180 0 20 40 Figure 5. Average forward current versus ambient temperature, δ = 0.5, (TO-220FPAC) Figure 6. Non repetitive surge peak forward current versus overload duration - maximum values, per diode (TO-220AC, D2PAK) IF(av)(A) IM(A) 160 Rth(j-a)=Rth(j-c) 10 8 6 4 T 140 120 100 Tc=75°C Rth(j-a)=50°C/W 80 60 40 IM t 2 δ=tp/T tp Tc=100°C Tc=125°C 0 Tamb(°C) 20 0 20 40 60 80 100 120 140 160 180 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 Figure 7. Non repetitive surge peak forward current versus overload duration - maximum values (TO-220FPAC) Figure 8. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC, D2PAK) IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=75°C 0.6 0.4 δ = 0.5 Tc=100°C Tc=125°C t δ = 0.2 T Single pulse 0.2 δ = 0.1 δ=0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-4 tp(s) 1E-3 1E-2 δ=tp/T tp 1E-1 1E+0 3/9 Characteristics STPS8H100 Figure 9. Relative variation of thermal Figure 10. Reverse leakage current versus impedance junction to case versus reverse voltage applied (typical pulse duration (TO-220FPAC) values) IR(µA) 5E+3 1E+3 Tj=125°C Zth(j-c)/Rth(j-c) 1.0 0.8 1E+2 0.6 0.4 δ = 0.2 δ = 0.5 1E+1 T Single pulse 1E+0 Tj=25°C 0.2 δ = 0.1 1E-1 tp(s) δ=tp/T tp 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 1E-2 VR(V) 0 10 20 30 40 50 60 70 80 90 100 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Tj=25°C Figure 12. Forward voltage drop versus forward current (maximum values) IFM(A) 50.0 10.0 Tj=125°C 500 Tj=25°C 200 VR(V) 1 10 100 1.0 VFM(V) 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 100 Figure 13. Thermal resistance junction to ambient versus copper surface under tab - Epoxy printed circuit board FR4, ecu = 35 µm (D2PAK) Rth(j-a) (°C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 S(Cu) (cm²) 16 20 24 28 32 36 40 4/9 STPS8H100 Package information 2 Package information Epoxy meets UL94, V0. Table 4. D2PAK Dimensions Dimensions REF. Millimeters Min. A E L2 C2 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 A A1 A2 B D 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R B2 C C2 D E G L L2 L3 M R V2 0.40 typ. 0° 8° 0.016 typ. 0° 8° Figure 14. D2PAK footprint dimensions (in mm) 16.90 10.30 1.30 5.08 3.70 8.90 5/9 Package information Table 5. TO-220AC Dimensions STPS8H100 Dimensions REF. Millimeters Min. A H2 ØI L5 L7 C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 C D E F L6 L2 F1 G F1 L9 L4 F D H2 L2 L4 L5 16.40 typ. 13.00 2.65 15.25 6.20 3.50 14.00 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 M E G L6 L7 L9 M Diam. I 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 6/9 STPS8H100 Table 6. TO-220FPAC Dimensions Package information Dimensions REF. Millimeters Min. A H B Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 5.20 2.7 10.4 A B D 4.4 2.5 2.5 0.45 0.75 1.15 4.95 2.4 10 Dia L6 L2 L3 L5 F1 L4 D L7 E F F1 G G1 H L2 L3 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 G E L4 L5 L6 L7 Dia. In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information STPS8H100 3 Ordering information Ordering type STPS8H100D STPS8H100FP STPS8H100G STPS8H100G-TR Marking STPS8H100D STPS8H100FP STPS8H100G STPS8H100G Package TO-220AC TO-220FPAC D2PAK D2 PAK Weight 1.86 g 1.9 g 1.48 g 1.48 g Base qty 50 50 50 500 Delivery mode Tube Tube Tube Tape and reel 4 Revision history Date Jul-2003 1-June-2006 Revision 6D 10 Last update. Reformatted to current standard. Added ECOPACK statement. Changed nF to pF in Figure 11. Revision number set to 10 to align with on-line versioning. Description of Changes 8/9 STPS8H100 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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