STPS8H100DEE-TR

ST CONFIDENTIAL – SUBJECT TO NON-DISCLOSURE AGREEMENT – DO NOT COPY STPS8H100DEE High voltage power Schottky rectifier Datasheet - production data Description NC l This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC converters. ti a A K A A A NC A n A A NC K Features Table 1. Device summary Symbol Value IF(AV) 8A VRRM 100 V Tj (max) 175 °C VF (typ) 0.68 V C • Very low conduction losses o n PowerFLAT (3.3 x 3.3) fi d K e A A Packaged in PowerFLAT™, this device is intended for use in low voltage, high frequency, inverters, free-wheeling, bypass diode and polarity protection applications. Its low profile was especially designed to be used in applications with space-saving constraints. • Negligible switching losses • Extremely fast switching T • Low thermal resistance • Avalanche capacity specified S • High junction temperature • ECOPACK®2 compliant component TM: PowerFLAT is a trademark of STMicroelectronics January 2015 This is information on a product in full production. DocID023272 Rev 2 1/7 www.st.com ST CONFIDENTIAL – SUBJECT TO NON-DISCLOSURE AGREEMENT – DO NOT COPY Characteristics 1 STPS8H100DEE Characteristics Table 2. Absolute ratings (limiting values Tamb = 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 15 A 8 A IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 100 A Repetitive peak avalanche power 480 W -65 to +175 °C 175 °C Tj Storage temperature range l ti a Tstg tp = 10 µs Tj= 125 °C n PARM(1) Tc = 150 °C Maximum operating junction temperature fi d e 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”. Table 3. Thermal resistance Symbol Junction to case Value Unit 4 °C/W Max. Unit 4.5 µA 6 mA n Rth(j-c) Parameter o Table 4. Static electrical characteristics Reverse leakage current T IR(1) Parameter C Symbol S VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VR = VRRM - 0.60 IF = 10 A - 0.62 IF = 16 A Tj = 125 °C - To evaluate the conduction losses use the following equation: DocID023272 Rev 2 0.70 0.90 2. Pulse test: tp = 380 µs, δ < 2% P = 0.61 x IF(AV) + 0.0088 x IF2(RMS) 0.68 0.85 1. Pulse test: tp = 5 ms, δ < 2% 2/7 2 0.82 - Tj = 125 °C Tj = 25 °C Typ. IF = 8 A Tj = 125 °C Tj = 25 °C Min. 0.68 0.75 V ST CONFIDENTIAL – SUBJECT TO NON-DISCLOSURE AGREEMENT – DO NOT COPY STPS8H100DEE Characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (δ = 0.5) IF(AV)(A) PF(AV)(W) 7 10 δ = 0.5 δ = 0.2 6 Rth(j-a)=Rth(j-c) δ = 0.1 5 8 δ=1 δ = 0.05 6 4 3 4 T δ =tp/T IF(AV)(A) tp 0 0 1 2 3 4 5 6 7 8 9 10 50 75 100 10 100 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse 0.1 t p(µs) C 1 0.0 1.E-05 1000 Figure 5. Reverse leakage current versus reverse voltage applied (typical values) 1.E-04 1.E-03 1.E-02 1.E+00 C(pF) T S 1.E-01 Figure 6. Junction capacitance versus reverse voltage applied (typical values) 1000 F=1 MHz VOSC=30 mVRMS Tj = 25°C Tj = 150 °C 1.E-01 175 e 0.001 1.E+00 150 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration fi d n o 0.01 1.E+01 125 1.0 0.1 IR(mA) 25 Tamb(°C) Zth(j-c)/Rth(j-c) PARM (t p ) PARM (10 µs) 1.E+02 tp 0 Figure 3. Normalized avalanche power derating versus pulse duration 1 δ =tp/T n 0 ti a 2 1 l T 2 Tj = 125 °C Tj = 100 °C 100 Tj = 75 °C 1.E-02 Tj = 50 °C Tj = 25 °C 1.E-03 VR(V) VR(V) 1.E-04 10 0 10 20 30 40 50 60 70 80 90 100 1 DocID023272 Rev 2 10 100 3/7 7 ST CONFIDENTIAL – SUBJECT TO NON-DISCLOSURE AGREEMENT – DO NOT COPY Characteristics STPS8H100DEE Figure 7. Forward voltage drop versus forward current Figure 8. Thermal resistance junction to ambient versus copper surface under tab IFM(A) Rth(j-a)(°C/W) 100.0 250 PowerFLAT (3.3x3.3) epoxy printed board FR4, copper thickness=35µm Tj=125 °C (Maximum values) 200 10.0 150 Tj=125 °C (Typical values) Tj=25 °C (Maximum values) l 100 50 VFM(V) 0 0.1 0.2 0.4 0.6 0.8 1.0 0 1.2 1 S T C o n fi d e n 0.0 ti a 1.0 4/7 DocID023272 Rev 2 2 3 SCu(cm²) 4 5 6 7 8 9 10 ST CONFIDENTIAL – SUBJECT TO NON-DISCLOSURE AGREEMENT – DO NOT COPY STPS8H100DEE Package information • Epoxy meets UL94, V0 • Cooling method: by conduction (C) l In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Exposed pad L E2 L1 nc e/2 E/2 nc D/2 D D2 D3 a k e e E A3 n b ti a Figure 9. PowerFLAT-3.3x3.3-8L dimensions (definitions) n a k A Index area (D/2 x E/2) A4 fi d L2 Projection o Table 5. PowerFLAT-8L dimensions (values) A Dimensions Millimeters C Ref. Inches Min. Typ. Max. Min. Typ. Max. 0.95 1.00 1.05 0.037 0.039 0.041 0.20 0.0079 A4 0.20 0.0079 T A3 b 0.30 0.37 0.44 0.012 0.015 0.017 D 3.20 3.30 3.40 0.126 0.130 0.134 D2 2.24 2.31 2.38 0.088 0.091 0.094 D3 1.60 1.67 1.74 0.063 0.066 0.069 S 2 Package information e 0.65 0.026 E 3.20 3.30 3.40 0.126 0.130 0.134 E2 1.68 1.75 1.82 0.066 0.069 0.072 L 0.31 0.38 0.45 0.012 0.015 0.018 L1 0.55 0.62 0.69 0.22 0.024 0.027 L2 0.86 0.93 1.00 0.034 0.037 0.039 DocID023272 Rev 2 5/7 7 ST CONFIDENTIAL – SUBJECT TO NON-DISCLOSURE AGREEMENT – DO NOT COPY Ordering information STPS8H100DEE Figure 10. Footprint (dimensions in mm) 3.50 0.21 1.25 fi d e Ordering information 0.52 n 1.79 3 ti a 0.80 0.42 l 3.50 2.28 1.75 1.75 Table 6. Ordering information Marking STPS8H100DEETR S8H100 (3.3 x 3.3) 34 mg Base qty Delivery mode 3000 Tape and reel 13” reel Table 7. Document revision history Revision 9-Sep-2012 1 First issue. 16-Jan-2015 2 Updated order code name and reformatted to current standard. T Date S 6/7 PowerFLAT Weight Revision history C 4 Package o n Order code Changes DocID023272 Rev 2 ST CONFIDENTIAL – SUBJECT TO NON-DISCLOSURE AGREEMENT – DO NOT COPY o n fi d e n ti a l STPS8H100DEE C IMPORTANT NOTICE – PLEASE READ CAREFULLY T STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. S Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID023272 Rev 2 7/7 7