STPSC10065D

STPSC10065 Datasheet 650 V, 10 A low VF power Schottky silicon carbide diode Features A K K K A A NC A K TO-220AC D²PAK HV • • • • • No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Operating Tj from -40 °C to 175 °C • • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant component Applications • • • • DC/DC converter High frequency inverter Snubber Boost PFC function Description This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Product label Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1. Product status link STPSC10065 Product summary Symbol Value IF(AV) 10 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V DS12185 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10065 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Value Unit 650 V 22 A 10 A A current(1) IF(AV) Average forward current TC = 150 °C, DC IFRM Repetitive peak forward current Tc = 150 °C, Tj = 175 °C, δ = 0.1 42 tp = 10 ms sinusoidal, Tc = 25 °C 48 tp = 10 ms sinusoidal, Tc = 125 °C 39 tp = 10 µs square, Tc = 25 °C 210 IFSM Tstg Tj Surge non repetitive forward current A Storage temperature range -65 to +175 °C Operating junction temperature -40 to +175 °C 1. Value based on Rth(j-c) max. Table 2. Thermal parameters Symbol Rth(j-c) Value Parameter Unit Typ. Max. 1.0 1.5 °C/W Min. Typ. Max. Unit - 7 130 - 53 900 - 1.30 1.45 - 1.45 1.65 - 1.50 Junction to case For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol IR (1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 150 °C VR = VRRM Tj = 25 °C VF (2) Forward voltage drop Tj = 150 °C Tj = 175 °C IF = 10 A µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.97 x IF(AV) + 0.068 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS12185 - Rev 3 page 2/13 STPSC10065 Characteristics Table 4. Dynamic electrical characteristics Symbol QCj (1) Cj 1. DS12185 - Rev 3 Parameter Total capacitive charge Total capacitance Test conditions Typ. Unit VR = 400 V 34 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 670 VR = 400 V, Tc = 25 °C, F = 1 MHz 55 pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 3/13 STPSC10065 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values) Figure 2. Reverse leakage current versus reverse voltage applied (typical values) IF (A) IR (µA) 1.E+02 20 Pulse test : tp=500µs 18 Tj=175 °C Ta=100 °C 16 Tj=150 °C 1.E+01 14 Ta=150 °C 1.E+00 12 10 Ta=175 °C Ta=25 °C 8 1.E-01 6 Tj=25 °C 1.E-02 4 2 VR(V) VF (V) 1.E-03 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 2.4 Figure 3. Peak forward current versus case temperature T δ = 0.1 700 200 250 300 350 400 450 500 550 600 650 Cj(pF) F=1 MHz VOSC=30 mVRMS Tj=25 °C 600 tp δ=tp/T 60 100 150 Figure 4. Junction capacitance versus reverse voltage applied (typical values) IM(A) 80 50 500 δ = 0.3 40 400 δ = 0.5 300 200 20 δ= 1 δ = 0.7 100 TC(°C) 0 0 25 50 75 VR(V) 100 125 150 175 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration 0 0.1 10.0 100.0 1000.0 Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Zth(j-c) / Rth(j-c) 1.E+03 1.0 1.0 IFSM(A) 0.9 0.8 0.7 Ta=25 °C 0.6 0.5 1.E+02 Ta=125 °C 0.4 0.3 0.2 0.1 Single pulse tp(s) 0.0 1.E-05 DS12185 - Rev 3 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 t p (s) 1.E-04 1.E-03 1.E-02 page 4/13 STPSC10065 Characteristics (curves) Figure 7. Total capacitive charges versus reverse voltage applied (typical values) Qcj(nC) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values) Rth(j-a) (°C/W) 60 35 30 D²PAK HV Epoxy printed board FR4, copper thickness = 70 µm 50 25 40 20 30 15 20 10 10 5 SCu (cm²) VR (V) 0 0 DS12185 - Rev 3 50 100 150 200 250 300 350 400 0 0 5 10 15 20 25 30 35 40 page 5/13 STPSC10065 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-220AC package information • • • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.70 N·m Figure 9. TO-220AC package outline A H2 ØI C L5 L7 L6 L2 F1 D L9 L4 F M E G DS12185 - Rev 3 page 6/13 STPSC10065 TO-220AC package information Table 5. TO-220AC package mechanical data Dimensions Millimeters Ref. Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M ØI DS12185 - Rev 3 Inches 2.6 typ. 3.75 0.102 typ. 3.85 0.147 0.151 page 7/13 STPSC10065 D²PAK high voltage package information 2.2 D²PAK high voltage package information • Epoxy meets UL94, V0 Figure 10. D²PAK high voltage package outline DS12185 - Rev 3 page 8/13 STPSC10065 D²PAK high voltage package information Table 6. D²PAK high voltage package mechanical data Ref. Dimensions Min. Typ. Max. A 4.30 - 4.70 A1 0.03 - 0.20 C 1.17 - 1.37 D 8.95 - 9.35 e 4.98 - 5.18 E 0.50 - 0.90 F 0.78 - 0.85 F2 1.14 - 1.70 H 10.00 - 10.40 H1 7.40 - 7.80 J1 2.49 - 2.69 L 15.30 - 15.80 L1 1.27 - 1.40 L2 4.93 - 5.23 L3 6.85 - 7.25 L4 1.5 - 1.7 M 2.6 - 2.9 R 0.20 - 0.60 V 0° - 8° Figure 11. D²PAK high voltage footprint in mm 10,58 7,46 15,95 5,10 3,40 1,20 5,08 Note: DS12185 - Rev 3 For package and tape orientation, reel and inner box dimensions and tape outline please check TN1173. page 9/13 STPSC10065 D²PAK high voltage package information 2.2.1 Creepage distance between anode and cathode Table 7. Creepage distance between anode and cathode Symbol Note: Parameter CdA-K1 Minimum creepage distance between A and K1 (with top coating) CdA-K2 Minimum creepage distance between A and K2 (without top coating) Value D²PAK HV 5.38 3.48 Unit mm D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1) Figure 12. Creepage with top coating Figure 13. Creepage without top coating DS12185 - Rev 3 page 10/13 STPSC10065 Ordering information 3 Ordering information Table 8. Ordering information DS12185 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode STPSC10065D PSC10065D TO-220AC 1.86 g 50 Tube STPSC10065G2-TR PSC10065G2 D²PAK HV 1.48 g 1000 Tape and reel page 11/13 STPSC10065 Revision history Table 9. Document revision history Date Revision Changes 13-Jun-2017 1 First issue. 18-Jul-2017 2 Updated Table 3. Static electrical characteristics. Inserted STPOWER logo and product label "ST Sustainable". 23-Mar-2021 3 Added D²PAK HV package information. Minor text changes. DS12185 - Rev 3 page 12/13 STPSC10065 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS12185 - Rev 3 page 13/13