STPSC10065DLF

STPSC10065DLF Datasheet 650 V, 10 A power Schottky silicon carbide diode Features • • • • • • • • Less than 1 mm height package High creepage package No or negligible reverse recovery Temperature independent switching behavior High forward surge capability Very low drop forward voltage Power efficient product ECOPACK2 compliant component Applications • • • • Boost PFC Bootstrap diode LLC clamping function High frequency inverter applications Description Product status link STPSC10065DLF Product summary Symbol Value IF(AV) 10 A VRRM 650 V VF(typ.) 1.30 V T j(max.) 175 °C This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Qualified in low profile package, the STPSC10065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains. Product label DS13136 - Rev 2 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10065DLF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) IFSM Value Unit 650 V 18 A DC 10 A tp = 10 ms sinusoidal, Tc = 25 °C 48 tp = 10 ms sinusoidal, Tc = 125 °C 39 tp = 10 µs square, Tc = 25 °C 210 Tc = 140 °C(1) , Tj = 175 °C, δ = 0.1, fW > 10 kHz 44 A Tj = -40 °C to + 175 °C Tc = 140 Average forward current Surge non repetitive forward current °C(1), A IFRM Repetitive peak forward current Tstg Storage temperature range -55 to +175 °C Operating junction temperature range -40 to +175 °C Tj 1. Value based on Rth(j-c) max. Table 2. Thermal resistance parameters Symbol Rth(j-c) Parameter Typ. value Max. value Unit 1.4 2.0 °C/W Junction to case Table 3. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 10 A Min. Typ. Max. - 7 130 - 53 900 - 1.30 1.45 - 1.45 1.65 Unit µA V 1. tp = 10 ms, δ < 2% 2. tp = 500 μs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.97 x IF(AV) + 0.068 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604 : Calculation of conduction losses in a power rectifier • AN4021 : Calculation of reverse losses on a power diode DS13136 - Rev 2 page 2/12 STPSC10065DLF Characteristics Table 4. Dynamic electrical characteristics Symbol Qcj(1) Cj Parameter Total capacitive charge Total capacitance Test conditions Typ. Unit VR = 400 V 34 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 670 VR = 400 V, Tc = 25 °C, F = 1 MHz 55 pF 1. Most accurate value for the capacitive charge: VR Qcj VR =   ∫ C j V dV 0 DS13136 - Rev 2 page 3/12 STPSC10065DLF Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values) 20 Figure 2. Reverse leakage current versus reverse voltage applied (typical values) IF(A) IR(µA) 1.E+02 Pulse test : tp=500µs 18 T j =175 °C 16 1.E+01 Ta=25 °C 14 12 T j =150 °C 1.E+00 Ta=150 °C Ta=100 °C 10 Ta=175 °C 8 1.E-01 6 T j =25 °C 4 1.E-02 2 VF(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VR(V) 1.E-03 0 2.4 Figure 3. Peak forward current versus case temperature (fw > 10 kHz) 100 150 200 250 300 350 400 450 500 550 600 650 Figure 4. Junction capacitance versus reverse voltage applied (typical values) IM(A) Cj(pF) 70 700 T δ=0.1 60 50 F=1 MHz VOSC=30 mVRMS Tj=25 °C 600 δ=tp/T tp 50 500 40 400 δ=0.3 30 300 δ=0.5 200 20 100 δ=0.7 δ=1 10 VR(V) T C(°C) 0 0 0 DS13136 - Rev 2 25 50 75 100 125 150 175 0.1 1.0 10.0 100.0 1000.0 page 4/12 STPSC10065DLF Characteristics (curves) Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration IFSM(A) Zth(j-c) /Rth(j-c) 1.E+03 1.0 0.9 0.8 0.7 Ta=25 °C 0.6 1.E+02 0.5 Ta=125 °C 0.4 0.3 0.2 0.1 Single pulse t p (s) t p (s) 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+01 1.E-05 1.E+00 1.E-04 1.E-03 1.E-02 Figure 7. Total capacitive charges versus reverse voltage applied (typical values) Q Cj (nC) 35 30 25 20 15 10 5 VR(V) 0 0 DS13136 - Rev 2 50 100 150 200 250 300 350 400 page 5/12 STPSC10065DLF Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 PowerFLAT 8x8 HV package information • • Epoxy meets UL94, V0 Lead-free Package Figure 8. PowerFLAT 8x8 HV package outline DS13136 - Rev 2 page 6/12 STPSC10065DLF PowerFLAT 8x8 HV package information Table 5. PowerFLAT 8x8 HV mechanical data Ref. Dimensions (in mm) Min. Typ. Max. A 0.75 0.85 0.95 A1 0.00 A3 0.10 0.20 0.30 b 0.90 1.00 1.10 D 7.90 8.00 8.10 E 7.90 8.00 8.10 D2 7.10 7.20 7.30 E1 2.65 2.75 2.85 E2 4.25 4.35 4.45 e L 0.05 2.00 0.40 0.50 0.60 Figure 9. PowerFLAT 8x8 HV footprint Note: DS13136 - Rev 2 All dimensions are in millimeters. page 7/12 STPSC10065DLF PowerFLAT 8x8 HV packing information 2.2 PowerFLAT 8x8 HV packing information Figure 10. PowerFLAT 8x8 HV tape P2 (2.0±0.1) D0 ( 1.55±0.05) D1 ( 1.5 Min) P1 (12.00±0.1) W (16.00±0.3) E (1.75±0.1) F (7.50±0.1) B0 (8.30±0.1) T (0.30±0.05) P0 (4.0±0.1) A0 (8.30±0.1) K0 (1.10±0.1) Note: All dimensions are in millimeters. Figure 11. PowerFLAT 8x8 HV package orientation in carrier tape DS13136 - Rev 2 page 8/12 STPSC10065DLF PowerFLAT 8x8 HV packing information Figure 12. PowerFLAT 8x8 HV reel Note: DS13136 - Rev 2 All dimensions are in millimeters. page 9/12 STPSC10065DLF Ordering Information 3 Ordering Information Table 6. Ordering information DS13136 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STPSC10065DLF PSC10065 PowerFLAT 8x8 HV 170 mg 3000 Reel page 10/12 STPSC10065DLF Revision history Table 7. Document revision history DS13136 - Rev 2 Date Version Changes 04-Nov-2019 1 Initial release. 31-Mar-2021 2 Inserted STPOWER logo and unpdated Table 6. page 11/12 STPSC10065DLF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 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