STPSC1006D

STPSC1006D 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. c u d e t le o s b O - ST SiC diodes will boost the performance of PFC operations in hard switching conditions. ) s ( ct TO-220AC STPSC1006D Table 1. u d o ) s t( o r P Device summary IF(AV) 10 A VRRM 600 V Tj (max) 175 °C QC (typ) 12 nC r P e t e l o s b O May 2008 Rev 1 1/7 www.st.com 7 Characteristics 1 STPSC1006D Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 18 A Continuous forward current TC = 115 °C 10 A IFSM IF Surge non repetitive forward current tp = 10 ms sinusoidal 40 A IFRM Repetitive peak forward current δ = 0.1, TC = 110 °C, Tj = 150 °C 40 A Tstg Storage temperature range -55 to +175 °C Operating junction temperature -40 to +175 °C Tj Table 3. Thermal resistance Symbol Rth(j-c) Table 4. Parameter Value Junction to case Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C 1. tp = 10 ms, δ < 2% ) s ( ct Min. d o r P e let VR = VRRM so IF = 10 A b O - Tj = 150 °C 2. tp = 500 µs, δ < 2% uc 2 Static electrical characteristics (per diode) ) s t( Unit Typ Max. 30 300 210 1500 1.4 1.7 1.6 2.1 °C/W Unit µA V To evaluate the conduction losses use the following equation: P = 1.2 x IF(AV) + 0.09 x IF2(RMS) Table 5. u d o Other parameters r P e Symbol t e l o s b O 2/7 Parameter Test conditions Typ Unit Qc Total capacitive charge Vr = 400 V, IF = 10 A dIF/dt = -200 A/µs Tj = 150 °C 12 nC C Total capacitance Vr = 0 V, Tc = 25 °C, F = 1 Mhz 650 pF STPSC1006D Figure 1. Characteristics Forward voltage drop versus forward current (typical values) Figure 2. IFM(A) 20 1.E+04 Reverse leakage current versus reverse voltage applied (maximum values) IR(µA) 18 Tj=175 °C 16 1.E+03 14 Tj=25 °C Tj=150 °C Tj=150 °C 12 1.E+02 10 Tj=175 °C 1.E+01 8 6 1.E+00 4 Tj=25 °C VR(V) VFM(V) 2 1.E-01 0 0.0 0.5 Figure 3. 70 1.0 1.5 2.0 2.5 0 3.0 Peak forward current versus case temperature 100 Figure 4. IM(A) 150 200 δ=tp/T tp 350 300 δ=0.3 250 δ=0.5 200 e t le o s b O 150 20 100 δ=1 δ=0.7 50 75 100 500 550 600 ) s t( F=1 MHz VOSC=30 mVRMS Tj=25 °C o r P 0 0 25 450 VR(V) 50 TC(°C) 400 c u d 400 40 0 350 Junction capacitance versus reverse voltage applied (typical values) 450 50 10 300 C(pF) δ=0.1 30 250 500 T 60 50 125 150 175 ) s ( ct 1 10 100 1000 u d o r P e t e l o s b O 3/7 Characteristics Figure 5. 1.0 STPSC1006D Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, typical values) IFSM(A) Zth(j-c)/Rth(j-c) 1.E+03 0.9 0.8 0.7 1.E+02 Tj=25 °C 0.6 0.5 Tj=125 °C 0.4 1.E+01 0.3 0.2 0.1 tp(s) Single pulse tp(s) 0.0 1.E+00 1.E-05 1.E-04 Figure 7. 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Total capacitive charges versus dIF/dt (typical values) QC(nC) 18 c u d IF=10A VR=400 V Tj=150 °C 16 14 12 10 8 e t le 6 4 0 0 50 100 150 ) s ( ct u d o r P e t e l o s b O 4/7 o s b O dIF/dt(A/µs) 2 200 250 300 350 400 450 500 o r P 1.E+00 ) s t( STPSC1006D 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: C ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 6. TO-220AC Dimensions Dimensions Ref. A H2 ØI C L5 L2 F1 F o r P e t e l o bs (t s) L9 Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F P e let 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 c u d G L2 L4 c u d ro o s b O D ) s t( Inches Min. L7 L6 Millimeters 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M E M Diam. I 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 O 5/7 Ordering information 3 STPSC1006D Ordering information Table 7. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STPSC1006D STPSC1006D TO-220AC 1.86 g 50 Tube Revision history Table 8. Document revision history Date Revision 05-May-2008 1 Description of changes First issue c u d e t le ) s ( ct u d o r P e t e l o s b O 6/7 o s b O - o r P ) s t( STPSC1006D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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