STPSC10C065RY

STPSC10C065-Y Datasheet Automotive 650 V power Schottky silicon carbide diode Features NC(1) K(2) A(3) K A I2PAK NC K • • • • • AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications PPAP capable • ECOPACK®2 compliant component Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions. Product status link STPSC10C065-Y Product summary IF(AV) 10 A VRRM 650 V Tj (max.) 175 °C DS12402 - Rev 2 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10C065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Surge non repetitive forward current Tstg Unit 650 V 22 A Tc = 120 °C, DC current(1) 10 A tp = 10 ms sinusoidal, Tc = 25 °C 85 tp = 10 ms sinusoidal, Tc = 125 °C 75 tp = 10 µs square, Tc = 25 °C 500 Tj from -40 °C to 175 °C Average forward current IFSM Value Storage temperature range Tj Operating junction temperature(2) A -55 to +175 °C -40 to +175 °C 1. Value based on Rth(j-c) max. 2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Rth(j-c) Value Parameter Junction to case Typ. Max. 1.3 2.0 Unit °C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 10 A Min. Typ. Max. - 9 100 - 85 425 - 1.56 1.75 - 1.98 2.50 Unit µA V 1. Pulse test: tp = 10 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) + 0.12 x IF2(RMS) Table 4. Dynamic electrical characteristics Symbol QCj(1) Cj 1. DS12402 - Rev 2 Parameter Total capacitive charge Total capacitance Test conditions Typ. Unit VR = 400 V 26.4 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 480 VR = 300 V, Tc = 25 °C, F = 1 MHz 47 pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 2/9 STPSC10C065-Y Characteristics (curves) 1.1 Characteristics (curves) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 1. Forward voltage drop versus forward current (typical values, low level) 20 IF(A) 100 IF(A) Pulse test : tp = 500 µs Pulse test : tp = 500 µs 80 16 Ta = 100 °C 60 12 Ta = 150 °C Ta = 175 °C 8 T a = 25 °C 40 Ta = 100 °C Ta = 25 °C Ta = 150 °C 20 4 Ta = 175 °C VF(V) Ta = -40 °C 0 0.0 0.5 1.0 1.5 2.0 VF(V) 0 2.5 3.0 0 3.5 Figure 3. Reverse leakage current versus reverse voltage applied (typical values) IR(µA) 1 2 3 4 5 6 7 Figure 4. Peak forward current versus case temperature 80 IM (A) 1.E+03 T δ = 0.1 70 δ =tp/T 1.E+02 8 tp 60 Tj = 175 °C 1.E+01 50 Tj = 150 °C 1.E+00 δ = 0.3 40 δ = 0.5 1.E-01 30 1.E-02 20 Tj = 25 °C 1.E-03 VR(V) δ = 0.7 TC(°C) 0 1.E-04 0 DS12402 - Rev 2 δ= 1 10 50 100 150 200 250 300 350 400 450 500 550 600 650 0 25 50 75 100 125 150 175 page 3/9 STPSC10C065-Y Characteristics (curves) Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c) /Rth(j-c) Cj (pF) 1.0 500 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 400 0.9 0.8 0.7 0.6 300 0.5 0.4 200 0.3 0.2 100 0 0.1 1.0 10.0 Single pulse t p (s) 0.1 VR(V) 100.0 1000.0 Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 0.0 1.E-05 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8. Total capacitive charges versus reverse voltage applied (typical values) IFSM(A) 30 1.E+03 1.E-04 QCj (nC) 25 Ta = 25 °C 20 Ta = 125 °C 15 1.E+02 10 5 VR(V) t p (s) 0 1.E+01 1.E-05 DS12402 - Rev 2 1.E-04 1.E-03 1.E-02 0 50 100 150 200 250 300 350 400 page 4/9 STPSC10C065-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 I²PAK package information • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Figure 9. I²PAK package outline DS12402 - Rev 2 page 5/9 STPSC10C065-Y I²PAK package information Table 5. I²PAK package mechanical data Dimensions Ref. DS12402 - Rev 2 Millimeters Inches (for reference only) Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.044 0.067 c 0.49 0.70 0.019 0.028 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 E 10.00 10.40 0.394 0.409 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 page 6/9 STPSC10C065-Y Ordering information 3 Ordering information Table 6. Ordering information DS12402 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STPSC10C065RY PSC10C065RY I²PAK 1.5 g 50 Tube page 7/9 STPSC10C065-Y Revision history Table 7. Document revision history DS12402 - Rev 2 Date Revision Changes 16-Feb-2018 1 First issue. 24-Sep-2018 2 Corrected cover image. page 8/9 STPSC10C065-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12402 - Rev 2 page 9/9