STPSC10H065DLF

STPSC10H065DLF Datasheet 650 V, 10 A power Schottky silicon carbide diode Features • • • • • • • • Less than 1 mm height package High creepage package No or negligible reverse recovery Temperature independent switching behavior High forward surge capability Very low drop forward voltage Power efficient product ECOPACK2 compliant component Applications • • • • Boost PFC Bootstrap diode LLC clamping function High frequency inverter applications Description Product status link STPSC10H065DLF Product summary Symbol Value IF(AV) 10 A VRRM 650 V VF(typ.) 1.38 V T j(max.) 175 °C This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Qualified in low profile package, the STPSC10H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains. Product label DS13179 - Rev 2 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10H065DLF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) IFSM Value Unit 650 V 28 A DC 10 A tp = 10 ms sinusoidal, Tc = 25 °C 90 tp = 10 ms sinusoidal, Tc = 125 °C 80 tp = 10 µs square, Tc = 25 °C 850 Tc = 125 °C(1) , Tj = 175 °C, δ = 0.1, fW > 10 kHz 42 A Tj = -40 °C to + 175 °C Tc = 125 Average forward current Surge non repetitive forward current °C(1), A IFRM Repetitive peak forward current Tstg Storage temperature range -55 to +175 °C Operating junction temperature range -40 to +175 °C Tj 1. Value based on Rth(j-c) max. Table 2. Thermal resistance parameters Symbol Rth(j-c) Parameter Typ. value Max. value Unit 1.65 2.35 °C/W Junction to case Table 3. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 10 A Min. Typ. Max. - 9 100 - 85 425 - 1.38 1.55 - 1.60 1.95 Unit µA V 1. tp = 10 ms, δ < 2% 2. tp = 500 μs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.00 x IF(AV) + 0.095 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604 : Calculation of conduction losses in a power rectifier • AN4021 : Calculation of reverse losses on a power diode DS13179 - Rev 2 page 2/12 STPSC10H065DLF Characteristics Table 4. Dynamic electrical characteristics Symbol Qcj(1) Cj Parameter Total capacitive charge Total capacitance Test conditions Typ. Unit VR = 400 V 32 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 595 VR = 400 V, Tc = 25 °C, F = 1 MHz 55 pF 1. Most accurate value for the capacitive charge: VR Qcj VR =   ∫ C j V dV 0 DS13179 - Rev 2 page 3/12 STPSC10H065DLF Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) IF(A) IF(A) 20 80 Pulse test : tp=500µs 18 Pulse test : tp=500µs 70 16 Ta=25 °C Ta=25 °C 60 14 Ta=100 °C 12 50 Ta=150 °C 10 40 Ta=175 °C 8 Ta=100 °C 30 Ta=150 °C 6 20 4 2 VF(V) 0 Ta=175 °C 10 VF(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 3. Reverse leakage current versus reverse voltage applied (typical values) IR(µA) 0 2 3 4 5 6 Figure 4. Peak forward current versus case temperature (fw > 10 kHz) 90 1.E+03 1 IM(A) δ =0.1 T 80 1.E+02 70 T j =175 °C T j =150 °C δ=tp/T tp 60 1.E+01 1.E+00 50 δ =0.3 40 δ =0.5 30 1.E-01 20 T j =25 °C VR(V) 1.E-02 δ =0.7 δ =1 10 T C(°C) 0 0 50 DS13179 - Rev 2 100 150 200 250 300 350 400 450 500 550 600 650 0 25 50 75 100 125 150 175 page 4/12 STPSC10H065DLF Characteristics (curves) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration Figure 5. Junction capacitance versus reverse voltage applied (typical values) Cj(pF) Zth(j-c) /Rth(j-c) 600 1.0 F=1 MHz VOSC=30 mVRMS Tj=25 °C 500 0.9 0.8 0.7 400 0.6 300 0.5 0.4 200 0.3 0.2 100 0 0.1 1.0 10.0 Single pulse 0.1 VR(V) 100.0 t p (s) 0.0 1000.0 1.E-05 Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8. Total capacitive charges versus reverse voltage applied (typical values) IFSM(A) Q Cj (nC) 1.E+03 35 Ta=25 °C 30 25 Ta=125 °C 20 1.E+02 15 10 5 VR(V) t p (s) 0 1.E+01 1.E-05 1.E-04 1.E-03 0 1.E-02 50 100 150 200 250 300 350 400 Figure 9. Thermal resistance junction to ambient versus copper surface under tab (typical values) Rth(j-a) (°C/W) 125 epoxy printed board FR4, eCu = 70 µm PowerFlat_8X8 100 75 50 25 SCu (cm²) 0 0 DS13179 - Rev 2 1 2 3 4 5 6 7 8 9 10 page 5/12 STPSC10H065DLF Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 PowerFLAT 8x8 HV package information • • Epoxy meets UL94, V0 Lead-free Package Figure 10. PowerFLAT 8x8 HV package outline DS13179 - Rev 2 page 6/12 STPSC10H065DLF PowerFLAT 8x8 HV package information Table 5. PowerFLAT 8x8 HV mechanical data Ref. Dimensions (in mm) Min. Typ. Max. A 0.75 0.85 0.95 A1 0.00 A3 0.10 0.20 0.30 b 0.90 1.00 1.10 D 7.90 8.00 8.10 E 7.90 8.00 8.10 D2 7.10 7.20 7.30 E1 2.65 2.75 2.85 E2 4.25 4.35 4.45 e L 0.05 2.00 0.40 0.50 0.60 Figure 11. PowerFLAT 8x8 HV footprint Note: DS13179 - Rev 2 All dimensions are in millimeters. page 7/12 STPSC10H065DLF PowerFLAT 8x8 HV packing information 2.2 PowerFLAT 8x8 HV packing information Figure 12. PowerFLAT 8x8 HV tape P2 (2.0±0.1) D0 ( 1.55±0.05) D1 ( 1.5 Min) P1 (12.00±0.1) W (16.00±0.3) E (1.75±0.1) F (7.50±0.1) B0 (8.30±0.1) T (0.30±0.05) P0 (4.0±0.1) A0 (8.30±0.1) K0 (1.10±0.1) Note: All dimensions are in millimeters. Figure 13. PowerFLAT 8x8 HV package orientation in carrier tape DS13179 - Rev 2 page 8/12 STPSC10H065DLF PowerFLAT 8x8 HV packing information Figure 14. PowerFLAT 8x8 HV reel Note: DS13179 - Rev 2 All dimensions are in millimeters. page 9/12 STPSC10H065DLF Ordering Information 3 Ordering Information Table 6. Ordering information DS13179 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STPSC10H065DLF PSC10H065 PowerFLAT 8x8 HV 170 mg 3000 Reel page 10/12 STPSC10H065DLF Revision history Table 7. Document revision history DS13179 - Rev 2 Date Version Changes 04-Dec-2019 1 Initial release. 31-Mar-2021 2 Inserted STPOWER logo and unpdated Table 6. page 11/12 STPSC10H065DLF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS13179 - Rev 2 page 12/12