STPSC10H065-Y
Automotive 650 V power Schottky silicon carbide diode
Datasheet - production data
Description
K
A
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
K
K
K
TO-220AC
A
A
NC
D²PAK
Features
AEC-Q101 qualified
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
PPAP capable
ECOPACK®2 compliant component
February 2017
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
10 A
VRRM
650 V
Tj (max.)
175 °C
DocID026618 Rev 4
This is information on a product in full production.
1/11
www.st.com
Characteristics
1
STPSC10H065-Y
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM
Repetitive peak reverse
voltage
IF(RMS)
Forward rms current
Value
Unit
650
V
22
A
10
A
A
Tj = -40 to +175 °C
°C(1),
IF(AV)
Average forward current
TC = 135
IFRM
Repetitive peak forward
current
Tc =135 °C, Tj = 175 °C, δ = 0.1
41
tp = 10 ms sinusoidal, Tc = 25 °C
90
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 125 °C
80
tp = 10 µs square, Tc = 25 °C
470
Tstg
DC
Storage temperature range
Operating junction
Tj
temperature(2)
A
-55 to +175
°C
-40 to +175
°C
Notes:
(1)Value
(2)(dP
based on Rth(j-c) max.
tot/dTj)
< (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Value
Symbol
Parameter
Unit
Typ.
Max.
1.25
1.5
°C/W
Min.
Typ.
Max.
Unit
-
9
100
-
85
425
-
1.56
1.75
-
1.98
2.5
Junction to case
Rth(j-c)
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 10 A
Notes:
(1)Pulse
test: tp = 10 ms, δ < 2%
(2)Pulse
test: tp = 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.35 x IF(AV) + 0.115 x IF2(RMS)
2/11
DocID026618 Rev 4
µA
V
STPSC10H065-Y
Characteristics
Table 5: Dynamic electrical characteristics
Symbol
QCj(1)
Cj
Parameter
Test conditions
Total capacitive charge
Total capacitance
Typ.
Unit
VR = 400 V
28.5
nC
VR = 0 V, Tc = 25 °C, F = 1 MHz
480
VR = 400 V, Tc = 25 °C, F = 1 MHz
48
pF
Notes:
(1)Most
𝑉
accurate value for the capacitive charge: 𝑄𝑐𝑗 = ∫0 𝑂𝑈𝑇 𝐶𝐽 (𝑉𝑅 ) • 𝑑𝑉𝑅
DocID026618 Rev 4
3/11
Characteristics
1.1
STPSC10H065-Y
Characteristics (curves)
Figure 1: Forward voltage drop versus forward
current (typical values, low level)
20
IF(A)
100
Pulse test : tp= 500µs
18
Figure 2: Forward voltage drop versus forward
current (typical values, high level)
IF(A)
Pulse test : tp= 500µs
90
16
80
Ta=25 °C
14
70
12
Ta=150 °C
Ta=100 °C
10
60
Ta=100 °C
8
40
6
30
4
20
2
Ta=150 °C
10
VF (V)
0
0.0
Ta=25 °C
50
Ta=175 °C
Ta=175 °C
VF (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
Figure 3: Reverse leakage current versus reverse
voltage applied (typical values)
1
2
3
4
5
6
7
8
Figure 4: Peak forward current versus case
temperature
IR(µA)
1.E+03
Tj=175 °C
1.E+02
Tj=150 °C
1.E+01
1.E+00
1.E-01
Tj=25 °C
VR(V)
1.E-02
0
50
100 150 200 250 300 350 400 450 500 550 600 650
Figure 5: Junction capacitance versus reverse
voltage applied (typical values)
500
Cj (pF)
1.0
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
450
400
Zth(j-c) /Rth(j-c)
0.9
0.8
350
0.7
300
0.6
250
0.5
200
0.4
150
0.3
100
0.2
50
0.1
1.0
Single pulse
VR(V)
0.1
10.0
0.0
1.E-05
0
4/11
Figure 6: Relative variation of thermal impedance
junction to case versus pulse duration
100.0
1000.0
DocID026618 Rev 4
1.E-04
t p(s)
1.E-03
1.E-02
1.E-01
1.E+00
STPSC10H065-Y
Characteristics
Figure 7: Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
1.E+03
Figure 8: Total capacitive charges versus reverse
voltage applied (typical values)
32
IFSM(A)
Qcj(nC)
28
24
Ta=25 °C
20
Ta=125 °C
16
1.E+02
12
8
4
VR (V)
t p(s)
1.E+01
1.E-05
1.E-04
1.E-03
0
0
1.E-02
50
100
150
200
250
300
350
400
Figure 9: Thermal resistance junction to ambient versus copper surface under tab for D²PAK package
(typical values)
80
Rth(j-a) (°C/W)
70
60
50
40
30
20
Epoxy printed board FR4, eCU= 35 µm
10
SCu(cm²)
0
0
5
10
15
20
DocID026618 Rev 4
25
30
35
40
5/11
Package information
2
STPSC10H065-Y
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 N·m
Maximum torque value: 0.7 N·m
D²PAK package information
Figure 10: D²PAK package outline
6/11
DocID026618 Rev 4
STPSC10H065-Y
Package information
Table 6: D²PAK package mechanical data
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
Max.
A
4.40
4.60
0.173
0.181
A1
0.03
0.23
0.001
0.009
b
0.70
0.93
0.028
0.037
b2
1.14
1.70
0.045
0.067
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
7.50
7.75
8.00
0.295
0.305
0.315
D2
1.10
1.30
0.051
0.060
E
10
E1
8.50
E2
6.85
e
1.50
0.043
10.40
0.394
8.70
8.90
0.335
0.343
0.346
7.05
7.25
0.266
0.278
0.282
2.54
0.409
0.100
e1
4.88
5.28
0.190
0.205
H
15
15.85
0.591
0.624
J1
2.49
2.69
0.097
0.106
L
2.29
2.79
0.090
0.110
L1
1.27
1.40
0.049
0.055
L2
1.30
1.75
0.050
0.069
R
V2
0.4
0°
0.015
8°
0°
8°
Figure 11: D²PAK recommended footprint (dimensions are in mm)
DocID026618 Rev 4
7/11
Package information
2.2
STPSC10H065-Y
TO-220AC package information
Figure 12: TO-220AC package outline
8/11
DocID026618 Rev 4
STPSC10H065-Y
Package information
Table 7: TO-220AC package mechanical data
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
L2
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
Diam
2.6 typ.
3.75
0.102 typ.
3.85
DocID026618 Rev 4
0.147
0.151
9/11
Ordering information
3
STPSC10H065-Y
Ordering information
Table 8: Ordering information
4
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STPSC10H065GY-TR
STPSC10H065DY
PSC10H065GY
D²PAK
1.48 g
1000
Tape and reel
PSC10H065DY
TO-220AC
1.86 g
50
Tube
Revision history
Table 9: Document revision history
10/11
Date
Revision
Changes
26-Jun-2014
1
First issue.
19-Sep-2014
2
Updated Table 8.
24-Sep-2015
3
Added device in D2PAK. Updated the entire document
accordingly.
06-Feb-2017
4
Updated D²PAK package information section.
DocID026618 Rev 4
STPSC10H065-Y
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© 2017 STMicroelectronics – All rights reserved
DocID026618 Rev 4
11/11
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