STPSC10H12B2-TR

STPSC10H12B2-TR Datasheet 1200 V, 10 A, silicon carbide power Schottky diode A Features K K A K DPAK HV 2L Product label • • • • No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating Tj from -40 °C to 175 °C • Low VF • • DPAK HV creepage distance (anode to cathode) = 3 mm min. ECOPACK2 compliant Applications • • • • EV Charging station Servers DC/DC PFC Description Product status link STPSC10H12B2-TR Product summary IF(AV) 10 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature Housed in DPAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, servers, DC/DC modules, easing the compliance to IEC-60664-1. The STPSC10H12B2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. DS13411 - Rev 1 - August 2020 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10H12B2-TR Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current Value Unit 1200 V 25 A IF(AV) Average forward current δ = 0.5, square wave Tc = 155 °C, DC current 10 A IFRM Repetitive peak forward current Tc = 155 °C, Tj = 175 °C, δ = 0.1 38 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C 71 tp = 10 ms sinusoidal, Tc = 150 °C 60 Tstg Storage temperature range Tj Operating junction temperature(1) A -65 to +175 °C -40 to +175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Rth(j-c) Value Parameter Symbol Junction to case Typ. Max. 0.65 0.9 Unit °C/W Table 3. Static electrical characteristics Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 10 A Min. Typ. Max. - 5 60 - 30 400 - 1.35 1.50 - 1.75 2.25 Unit µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: • P = 1.03 x IF(AV) + 0.122 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS13411 - Rev 1 page 2/11 STPSC10H12B2-TR Characteristics Table 4. Dynamic electrical characteristics Symbol QCj (1) Cj 1. DS13411 - Rev 1 Parameter Total capacitive charge Total capacitance Test conditions Min. Typ. Max. Unit VR = 800 V - 57 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 725 - VR = 800 V, Tc = 25 °C, F = 1 MHz - 47 - pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 3/11 STPSC10H12B2-TR Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values) 20 Figure 2. Reverse leakage current versus reverse voltage applied (typical values) IF(A) IR(µA) 1.E+02 Pulse test : tp = 500 µs 15 1.E+01 Ta = 25 °C Tj = 150 °C 1.E+00 10 Tj = 25 °C 1.E-01 5 Ta = 150 °C 1.E-02 VF(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 3. Peak forward current versus case temperature 100 1.E-03 0 VR(V) 100 200 300 400 500 600 700 800 900 1000 1100 1200 Figure 4. Junction capacitance versus reverse voltage applied (typical values) IM(A) Cj(pF) 700 T F = 1 MHz δ = 0.1 80 δ = tp/T Vosc= 30 mVRMS 600 tp T = 25 °C j 500 60 40 δ = 0.3 400 δ = 0.5 300 200 20 δ=1 δ = 0.7 100 TC(°C) 0 0 25 50 75 100 125 150 175 VR(V) 0 0.1 DS13411 - Rev 1 1.0 10.0 100.0 1000.0 10000.0 page 4/11 STPSC10H12B2-TR Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Non- repetitive peak surge forward current versus pulse duration (sinusoidal waveform) IFSM(A) Zth(j-c) / Rth(j-c) 1.0 1.E+03 0.9 0.8 Ta = 25 °C 0.7 Ta = 150 °C 0.6 0.5 1.E+02 0.4 0.3 0.2 Single pulse 0.1 0.0 tp(s) 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 tp(s) 1.E+00 Figure 7. Total capacitive charges versus reverse voltage applied (typical values) QCj(nC) 1.E+01 1.E-05 1.E-04 1.E-03 1.E-02 Figure 8. Thermal resistance junction to ambient versus copper surface under tab on epoxy printed board FR4, eCu = 35 μm (typical values) 60 100 50 Rth(j-a)(°C/W) DPAK HV 2L 90 80 40 70 60 30 50 20 40 30 10 20 VR(V) 0 SCu (cm²) 10 0 0 100 DS13411 - Rev 1 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40 page 5/11 STPSC10H12B2-TR Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 DPAK HV 2L package information • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Figure 9. DPAK HV 2L package outline DS13411 - Rev 1 page 6/11 STPSC10H12B2-TR DPAK HV 2L package information Table 5. DPAK HV 2L package mechanical data Dimensions Millimeters Ref. Inches (for reference only) Min. Typ. Max. Min. Typ. Max. A 2.20 2.29 2.40 0.086 0.090 0.095 A1 0.90 1.10 0.035 0.044 A2 0.03 0.23 0.001 0.010 b 0.64 0.76 0.90 0.025 0.030 0.036 b4 5.20 5.10 5.40 0.204 0.201 0.213 c 0.45 0.60 0.017 0.024 c2 0.48 0.60 0.018 0.024 D 6.00 6.20 0.236 0.245 D1 4.60 4.80 0.181 E 6.40 6.60 0.251 E1 4.95 5.10 5.25 0.194 0.201 0.207 e 2.16 2.28 2.40 0.085 0.090 0.095 e1 4.40 4.60 0.173 0.182 H 9.35 10.10 0.368 0.398 L 1.00 1.50 0.039 0.060 L1 2.60 2.80 3.00 0.102 0.110 0.119 L2 0.65 0.80 0.95 0.025 0.031 0.038 V2 0° 8° 0° 4.70 0.185 0.189 0.260 8° Figure 10. Footprint (dimensions in mm) 1.80 6.10 2.80 1.50 4.572 6.30 10.70 DS13411 - Rev 1 page 7/11 STPSC10H12B2-TR DPAK HV 2L package information 2.1.1 Creepage distance between Anode and Cathode Table 6. Creepage distance between anode and cathode Symbol CdA-K Note: DS13411 - Rev 1 Parameter Minimum creepage distance between A and K DPAK HV Value Unit 3.0 mm DPAK HV creepage distance (anode to cathode) = 0.3 mm min. (refer to IEC 60664-1) page 8/11 STPSC10H12B2-TR Ordering information 3 Ordering information Table 7. Ordering information DS13411 - Rev 1 Order code Marking Package Weight Base qty. Delivery mode STPSC10H12B2-TR PSC10 H12 DPAK HV 0.350 g 2500 Tape and reel page 9/11 STPSC10H12B2-TR Revision history Table 8. Document revision history DS13411 - Rev 1 Date Revision 31-Aug-2020 1 Changes First issue. page 10/11 STPSC10H12B2-TR IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13411 - Rev 1 page 11/11