STPSC10TH13TI
Dual 650 V power Schottky silicon carbide diode in series
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in specific bridge-less
topologies, this dual 650 V rectifier will boost the
performance in hard switching conditions. Its high
forward surge capability ensures a good
robustness during transient phases.
.
Table 1. Device summary (per diode)
,QVXODWHG72$%
Symbol
Value
IF(AV)
10 A
VRRM
650 V
Tj (max.)
175 °C
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Suited for specific bridge-less topologies
High forward surge capability
Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
January 2016
This is information on a product in full production.
DocID024699 Rev 3
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www.st.com
8
Characteristics
1
STPSC10TH13TI
Characteristics
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, per
diode)
Symbol
Parameter
Value
Unit
650
V
22
A
Repetitive peak reverse voltage
VRRM
IF(RMS)
Forward rms current
(1)
Average forward current
Tc = 70 °C , DC current
10
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs sinusoidal, Tc = 25 °C
90
80
470
A
IFRM
Repetitive peak forward current Tc = 70 °C(1), = 0.1
41
A
Tstg
Storage temperature range
-55 to +175
°C
Operating junction temperature (2)
-40 to +175
°C
IF(AV)
Tj
1. Value based on Rth(j-c) max (per diode)
2.
dPtot
--------------dTj
1
- condition to avoid thermal runaway for a diode on its own heatsink
------------------------Rth j – a
Table 3. Thermal resistance
Symbol
Rth(j-c)
Parameter
Typ.
Max.
Per diode
3.1
4.1
Total
1.8
2.3
Junction to case
Unit
°C/W
0.5
Rth(c)
°C/W
When the diodes are used simultaneously:
Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
IR (1)
Reverse leakage
current
VF (2)
Forward voltage drop
Tests conditions
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 10A
Min.
Typ.
Max.
-
9
100
-
85
425
-
1.56
1.75
-
1.98
2.5
µA
V
1. Pulse test: tp = 10 ms, < 2%
2. Pulse test: tp = 500 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 1.35 x IF(AV) + 0.115 x IF2(RMS)
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DocID024699 Rev 3
Unit
STPSC10TH13TI
Characteristics
Table 5. Dynamic electrical characteristics (per diode)
Symbol
Qcj(1)
Parameter
Test conditions
Total capacitive charge
Cj
Total capacitance
Typ.
Unit
VR = 400 V
28.5
nC
VR = 0 V, Tc = 25 °C, F = 1 MHz
480
VR = 400 V, Tc = 25 °C, F = 1 MHz
48
pF
9287
1. Most accurate value for the capacitive charge:
4FM FMY5GY5
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward
current (typical values, low level, per diode)
current (typical values, high level, per diode)
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7D &
7D &
7D &
7D &
7D &
7D &
7D &
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7D &
9)0 9
Figure 3. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
(
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Figure 4. Peak forward current versus case
temperature
(per diode)
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7
7M &
(
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WS
7M &
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7M &
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7& &
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Characteristics
STPSC10TH13TI
Figure 5. Junction capacitance versus reverse
voltage applied
(typical values, per diode)
&MS)
Figure 6. Relative variation of thermal
impedance junction to case versus pulse
duration
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7M &
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Figure 7. Non-repetitive peak surge forward
current versus pulse duration (sinusoidal
waveform, per diode)
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9 5 9
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(
(
(
(
(
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Figure 8. Total capacitive charges versus
reverse voltage applied (typical values, per
diode)
4&MQ&
7D &
7D &
(
959
W SV
(
(
4/8
(
(
(
DocID024699 Rev 3
STPSC10TH13TI
2
Package information
Package information
Epoxy meets UL94, V0
Lead-free package
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1
Insulated TO-220AB package information
Figure 9. Insulated TO-220AB package outline
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F
D
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D
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F
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Package information
STPSC10TH13TI
Table 6. Insulated TO-220AB package mechanical data
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
Max.
Min.
15.90
0.598
3.75
Typ.
Max.
0.625
0.147
a2
13.00
14.00
0.511
0.551
B
10.00
10.40
0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80
16.80
0.622
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
M
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Typ.
Inches
16.40
2.60
DocID024699 Rev 3
0.646
0.102
0.661
STPSC10TH13TI
3
Ordering information
Ordering information
Table 7. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPSC10TH13TI
STPSC 10TH13TI
Insulated
TO-220AB
2.3g
50
Tube
Revision history
Table 8. Document revision history
Date
Revision
Changes
24-Jun-2013
1
First issue.
07-Nov-2013
2
Updated Figure 1 and Figure 2.
05-Jan-2016
3
Updated Table 7.
Format updated to current standard.
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STPSC10TH13TI
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