STPSC12065G-TR

STPSC12065 Datasheet 650 V, 12 A power Schottky silicon carbide diode Features K A K K D²PAK K A NC A A NC D²PAK HV K A • • • • • No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Operating Tj from -40 °C to 175 °C • • • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant Power efficient product K TO-220AC Applications • • • • DC/DC converter High frequency inverter Snubber Boost PFC function Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Product label Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1. Product status link STPSC12065 Product summary Symbol Value IF(AV) 12 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V DS11623 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC12065 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Value Unit 650 V 22 A DC(1) 12 A A IF(AV) Average forward current TC = 145 °C, IFRM Repetitive peak forward current Tc =145 °C, Tj = 175 °C, δ = 0.1 53 tp = 10 ms sinusoidal, Tc = 25 °C 50 tp = 10 ms sinusoidal, Tc = 125 °C 40 tp = 10 µs square, Tc = 25 °C 220 IFSM Surge non repetitive forward current Tstg Tj A Storage temperature range -55 to +175 °C Operating junction temperature -40 to +175 °C 1. Value based on Rth(j-c) max. Table 2. Thermal resistance parameters Symbol Rth(j-c) Value Parameter Junction to case Typ. Max. 0.85 1.25 Unit °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Tj = 25 °C IR (1) Reverse leakage current Tj = 150 °C Tj = 25 °C VR = VRRM Forward voltage drop Tj = 150 °C Tj = 175 °C Typ. Max. - 15 150 - 200 1000 8 50 - 1.30 1.45 - 1.45 1.65 - 1.50 600 V Tj = 25 °C VF (2) Min. IF = 12 A Unit µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.02 x IF(AV) + 0.065 x IF²(RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS11623 - Rev 3 page 2/14 STPSC12065 Characteristics (curves) Table 4. Dynamic electrical characteristics Symbol QCj 1.1 Test conditions Total capacitive charge Cj 1. Parameter Total capacitance Min. Typ. Max. Unit VR = 400 V - 36 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 750 - VR = 400 V, Tc = 25 °C, F = 1 MHz - 60 - pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values) 24 IF(A) Figure 2. Reverse leakage current versus reverse voltage applied (typical values) IR(µA) 1.E+03 Pulse test : tp=500µs Tj=175 °C 20 1.E+02 Ta=25 °C 16 Tj=150 °C Ta=150 °C Ta=100 °C 1.E+01 Ta=175 °C 12 1.E+00 8 1.E-01 4 Tj=25 °C VF(V) VR(V) 1.E-02 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Figure 3. Peak forward current versus case temperature 80 0 2.4 T δ=tp/T 800 tp 60 100 150 200 250 300 350 400 450 500 550 600 650 Figure 4. Junction capacitance versus reverse voltage applied (typical values) IM (A) δ=0.1 50 Cj (pF) F=1 MHz VOSC=30 mVRMS Tj=25 °C 700 600 500 δ=0.3 40 400 δ=0.5 300 20 200 δ=0.7 δ=1 100 TC(°C) 0 0 25 DS11623 - Rev 3 50 75 100 125 150 175 VR(V) 0 0.1 1.0 10.0 100.0 1000.0 page 3/14 STPSC12065 Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+03 Zth(j-c) /Rth(j-c) IFSM(A) 1.0 0.9 0.8 Ta=25 °C 0.7 0.6 1.E+02 0.5 Ta=125 °C 0.4 0.3 0.2 Single pulse 0.1 t p (s) t p (s) 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 7. Total capacitive charges versus reverse voltage applied (typical values) 40 1.E+01 1.E-05 1.E-04 1.E-03 1.E-02 Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values) QCj (nC) Rth(j-a) (°C/W) 60 35 30 50 25 40 20 30 15 D²PAK / D²PAK HV Epoxy printed board FR4, copper thickness = 70 µm 20 10 10 SCu (cm²) 5 VR(V) 0 0 0 0 50 DS11623 - Rev 3 100 150 200 250 300 350 5 10 15 20 25 30 35 40 400 page 4/14 STPSC12065 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-220AC package information • • • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.70 N·m Figure 9. TO-220AC package outline A H2 ØI C L5 L7 L6 L2 F1 D L9 L4 F M E G DS11623 - Rev 3 page 5/14 STPSC12065 TO-220AC package information Table 5. TO-220AC package mechanical data Dimensions Millimeters Ref. Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M ØI DS11623 - Rev 3 Inches 2.6 typ. 3.75 0.102 typ. 3.85 0.147 0.151 page 6/14 STPSC12065 D²PAK package information 2.2 D²PAK package information • • Epoxy meets UL94, V0. Cooling method: by conduction (C) Figure 10. D²PAK package outline DS11623 - Rev 3 page 7/14 STPSC12065 D²PAK package information Table 6. D²PAK package mechanical data Dimensions Millimeters Ref. Min. Inches Typ. Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 7.75 8.00 0.295 0.305 0.315 D2 1.10 1.30 1.50 0.043 0.051 0.060 E 10 10.40 0.394 E1 8.30 8.50 8.70 0.326 0.335 0.343 E2 6.85 7.05 7.25 0.266 0.278 0.282 e 0.409 2.54 0.100 e1 4.88 5.28 0.190 0.205 H 15 15.85 0.591 0.624 J1 2.49 2.69 0.097 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.049 0.055 L2 1.30 1.75 0.050 0.069 R V2 0.4 0.015 0° 8° 0° 8° Figure 11. D²PAK recommended footprint (dimensions are in mm) 2.54 16.90 9.75 12.20 1.60 2.54 5.08 Footprint_26 DS11623 - Rev 3 page 8/14 STPSC12065 D²PAK high voltage package information 2.3 D²PAK high voltage package information • Epoxy meets UL94, V0 Figure 12. D²PAK high voltage package outline DS11623 - Rev 3 page 9/14 STPSC12065 D²PAK high voltage package information Table 7. D²PAK high voltage package mechanical data Ref. Dimensions Min. Typ. Max. A 4.30 - 4.70 A1 0.03 - 0.20 C 1.17 - 1.37 D 8.95 - 9.35 e 4.98 - 5.18 E 0.50 - 0.90 F 0.78 - 0.85 F2 1.14 - 1.70 H 10.00 - 10.40 H1 7.40 - 7.80 J1 2.49 - 2.69 L 15.30 - 15.80 L1 1.27 - 1.40 L2 4.93 - 5.23 L3 6.85 - 7.25 L4 1.5 - 1.7 M 2.6 - 2.9 R 0.20 - 0.60 V 0° - 8° Figure 13. D²PAK high voltage footprint in mm 10,58 7,46 15,95 5,10 3,40 1,20 5,08 Note: DS11623 - Rev 3 For package and tape orientation, reel and inner box dimensions and tape outline please check TN1173. page 10/14 STPSC12065 D²PAK high voltage package information 2.3.1 Creepage distance between anode and cathode Table 8. Creepage distance between anode and cathode Symbol Note: Parameter CdA-K1 Minimum creepage distance between A and K1 (with top coating) CdA-K2 Minimum creepage distance between A and K2 (without top coating) Value D²PAK HV 5.38 3.48 Unit mm D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1) Figure 14. Creepage with top coating Figure 15. Creepage without top coating DS11623 - Rev 3 page 11/14 STPSC12065 Ordering information 3 Ordering information Table 9. Ordering information DS11623 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode STPSC12065D PSC12065D TO-220AC 1.86 g 50 Tube STPSC12065G-TR PSC12065G D²PAK 1.48 g 1000 Tape and reel STPSC12065G2-TR PSC12065G2 D²PAK HV 1.48 g 1000 Tape and reel page 12/14 STPSC12065 Revision history Table 10. Document revision history DS11623 - Rev 3 Date Revision Changes 29-Apr-2016 1 First issue. 12-Jul-2018 2 Added D²PAK package and Applications section. 25-Mar-2021 3 Updated Descrition title and Description. Inserted STPOWER logo and product label "ST Sustainable".Added D²PAK HV package information. Minor text changes. page 13/14 STPSC12065 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS11623 - Rev 3 page 14/14