STPSC12065GY-TR

STPSC12065-Y Datasheet Automotive 650 V, 12 A, silicon carbide power Schottky diode A Features K K K K A A NC K D²PAK TO-220AC K A A NC D²PAK HV Product label • • • • • • • AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability PPAP capable Operating Tj from -40 °C to 175 °C • VRRM guaranteed from -40 to +175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • ECOPACK®2 compliant Applications • On board charger Description Product status link STPSC12065-Y Product summary IF(AV) 12 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. DS11624 - Rev 4 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPSC12065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) 650 V IF(RMS) Forward rms current 22 A 12 A 53 A IF(AV) Tc = 145 °C(1), DC Average forward current IFRM Tc =145 Repetitive peak forward current IFSM Surge non repetitive forward current Tstg Tj °C(1), Tj = 175 °C, δ = 0.1 tp = 10 ms sinusoidal, Tc = 25 °C 50 tp = 10 ms sinusoidal, Tc = 125 °C 40 tp = 10 µs square, Tc = 25 °C 220 A Storage temperature range -55 to +175 °C Operating junction temperature -40 to +175 °C 1. Value based on Rth(j-c) max. Table 2. Thermal resistance parameters Rth(j-c) Value Parameter Symbol Junction to case Typ. Max. 0.85 1.25 Unit °C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions Tj = 25 °C IR (1) Reverse leakage current Tj = 150 °C Tj = 25 °C VR = VRRM Tj = 150 °C Forward voltage drop Typ. Max. - 15 150 - 200 1000 8 50 - 1.30 1.45 - 1.45 1.65 - 1.50 VR = 600 V Tj = 25 °C VF (2) Min. IF = 12 A Tj = 175 °C Unit µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.02 x IF(AV) + 0.065 x IF 2(RMS) Table 4. Dynamic electrical characteristics Symbol QCj (1) DS11624 - Rev 4 Parameter Total capacitive charge Test conditions VR = 400 V Min. Typ. Max. Unit - 36 - nC page 2/15 STPSC12065-Y Characteristics Symbol Cj 1. DS11624 - Rev 4 Parameter Total capacitance Test conditions Min. Typ. Max. VR = 0 V, Tc = 25 °C, F = 1 MHz - 750 - VR = 400 V, Tc = 25 °C, F = 1 MHz - 60 - Unit pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 3/15 STPSC12065-Y Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values) Figure 2. Reverse leakage current versus reverse voltage applied (typical values) IF(A) 24 IR(µA) 1.E+03 Pulse test : tp=500µs Tj=175 °C Ta=-40 °C 20 1.E+02 Ta=25 °C 16 Tj=150 °C Ta=100 °C 1.E+01 Ta=150 °C 12 1.E+00 Ta=175 °C 8 1.E-01 4 VR(V) VF(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.E-02 2.2 0 2.4 Figure 3. Peak forward current versus case temperature 80 T δ=tp/T 800 tp 60 50 100 150 200 250 300 350 400 450 500 550 600 650 Figure 4. Junction capacitance versus reverse voltage applied (typical values) IM (A) δ=0.1 Tj=25 °C Cj (pF) F=1 MHz VOSC=30 mVRMS Tj=25 °C 700 600 500 δ=0.3 40 400 δ=0.5 300 20 200 δ=0.7 δ=1 100 TC(°C) 0 0 25 DS11624 - Rev 4 50 75 100 125 150 175 VR(V) 0 0.1 1.0 10.0 100.0 1000.0 page 4/15 STPSC12065-Y Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c) /Rth(j-c) Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+03 IFSM(A) 0.9 0.8 0.7 Ta=25 °C 0.6 1.E+02 0.5 Ta=125 °C 0.4 0.3 0.2 Single pulse 0.1 t p (s) 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 t p (s) 1.E+00 Figure 7. Total capacitive charges versus reverse voltage applied (typical values) 40 1.E+01 1.E-05 1.E-04 1.E-03 1.E-02 Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 35 μm) QCj (nC) 80 35 Rth(j-a) (°C/W) D²PAK, D²PAK -HV 70 30 60 25 50 20 40 15 30 10 20 5 10 VR(V) 0 SCu (cm²) 0 0 50 DS11624 - Rev 4 100 150 200 250 300 350 400 0 5 10 15 20 25 30 35 40 page 5/15 STPSC12065-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220AC package information • • • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.70 N·m Figure 9. TO-220AC package outline A H2 ØI C L5 L7 L6 L2 F1 D L9 L4 F M E G DS11624 - Rev 4 page 6/15 STPSC12065-Y TO-220AC package information Table 5. TO-220AC package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M ØI DS11624 - Rev 4 Inches 2.6 typ. 3.75 0.102 typ. 3.85 0.147 0.151 page 7/15 STPSC12065-Y D²PAK package information 2.2 D²PAK package information • • Epoxy meets UL94, V0. Cooling method: by conduction (C) Figure 10. D²PAK package outline Table 6. D²PAK package mechanical data Dimensions Ref. Millimeters Min. DS11624 - Rev 4 Typ. Inches Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 7.75 8.00 0.295 0.305 0.315 D2 1.10 1.30 1.50 0.043 0.051 0.060 E 10 10.40 0.394 0.409 page 8/15 STPSC12065-Y D²PAK package information Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. E1 8.30 8.50 8.70 0.326 0.335 0.343 E2 6.85 7.05 7.25 0.266 0.278 0.282 e 2.54 0.100 e1 4.88 5.28 0.190 0.205 H 15 15.85 0.591 0.624 J1 2.49 2.69 0.097 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.049 0.055 L2 1.30 1.75 0.050 0.069 R V2 0.4 0° 0.015 8° 0° 8° Figure 11. D²PAK recommended footprint (dimensions are in mm) Footprint DS11624 - Rev 4 page 9/15 STPSC12065-Y D²PAK high voltage package information 2.3 D²PAK high voltage package information Figure 12. D²PAK high voltage package outline A H C L1 L R L4 R M L2 0.25 gauge plane F (x2) E e H1 L3 A1 V DS11624 - Rev 4 page 10/15 STPSC12065-Y D²PAK high voltage package information Table 7. D²PAK high voltage package mechanical data Ref. Dimensions Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° Figure 13. D²PAK High Voltage footprint in mm 10,58 7,46 15,95 5,10 3,40 1,20 5,08 DS11624 - Rev 4 page 11/15 STPSC12065-Y D²PAK high voltage package information 2.3.1 Creepage distance between Anode and Cathode Table 8. Creepage distance between anode and cathode Symbol Note: Parameter CdA-K1 Minimum creepage distance between A and K1 (with top coating) CdA-K2 Minimum creepage distance between A and K2 (without top coating) Value D²PAK HV 5.38 3.48 Unit mm D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1) Figure 14. Creepage with top coating Figure 15. Creepage without top coating DS11624 - Rev 4 page 12/15 STPSC12065-Y Ordering information 3 Ordering information Table 9. Ordering information DS11624 - Rev 4 Order code Marking Package Weight Base qty. Delivery mode STPSC12065DY PSC12065DY TO-220AC 1.86 g 50 Tube STPSC12065GY-TR PSC12065GY D²PAK 1.48 g 1000 Tape and reel STPSC12065G2Y-TR PSC12065G2Y D²PAK HV 1.48 g 1000 Tape and reel page 13/15 STPSC12065-Y Revision history Table 10. Document revision history Date Revision Changes 10-May-2016 1 First issue. 06-Nov-2017 2 Added D²PAK package. 10-Sep-2018 3 Added D²PAK HV package. Updated Section 2.3.1 Creepage distance between anode and cathode. 04-Dec-2018 4 Minor text changes to improve readability. Updated title of document. DS11624 - Rev 4 page 14/15 STPSC12065-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS11624 - Rev 4 page 15/15