STPSC12C065DY

STPSC12C065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description $ . . . $ 72$& Features The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications. Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified Symbol Value IF(AV) 12 A VRRM 650 V Tj (max) 175 °C • PPAP capable • ECOPACK®2 compliant component January 2015 This is information on a product in full production. DocID027332 Rev 1 1/8 www.st.com Characteristics 1 STPSC12C065-Y Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage, Tj = -40 °C IF(RMS) Forward rms current IF(AV) (1) , δ = 0.5 Value Unit 650 V 22 A Average forward current Tc = 120 °C 12 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 92 84 470 A IFRM Repetitive peak forward current Tc = 120 °C(1), Tj = 175 °C, δ = 0.1 51 A Tstg Storage temperature range -65 to +175 °C -40 to +175 °C Tj Operating junction temperature (2) 1. Value based on Rth(j-c) max. 2. dPtot --------------dTj 1 - condition to avoid thermal runaway for a diode on its own heatsink < ------------------------Rth ( j – a ) Table 3. Thermal resistance Value Symbol Rth(j-c) Parameter Unit Junction to case Typ. Max. 1.2 1.7 °C/W Table 4. Static electrical characteristics Symbol Parameter Tests conditions IR (1) Reverse leakage current VF (2) Forward voltage drop Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Min. Typ. Max. - 10 120 - 100 500 - 1.56 1.75 - 1.98 2.5 VR = VRRM IF = 12 A Unit µA V 1. tp = 10 ms, δ < 2% 2. tp = 500 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.096 x IF2(RMS) Table 5. Dynamic electrical characteristics Symbol Qcj (1) Cj Parameter Test conditions Total capacitive charge VR = 400 V Total capacitance Unit 29.3 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 530 VR = 300 V, Tc = 25 °C, F = 1 MHz 55 1. Most accurate value for the capacitive charge: 2/8 Typ. VOUT Qcj = ∫0 cj(vR).dvR DocID027332 Rev 1 pF STPSC12C065-Y Characteristics Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level) current (typical values, high level) ,)$   3XOVHWHVWWS —V  3XOVHWHVWWS —V  7  ƒ& D 7  ƒ& D  ,)$  7  ƒ& 7  ƒ& D D 7  ƒ&   D 7  ƒ& D   7  ƒ& D   7  ƒ& D 9 9 )         Figure 3. Reverse leakage current versus reverse voltage applied (typical values) )          Figure 4. Peak forward current versus case temperature , $  0 , —$ 5 ( 9 9   7 į  ( į WS7  ( WS 7M ƒ& ( į   ( į  7M ƒ& (  į  ( (  7Fƒ& 5              Figure 5. Junction capacitance versus reverse voltage applied (typical values)  į  9 9 7M ƒ& &MS)    7  ƒ& M       Figure 6. Relative variation of thermal impedance junction to case versus pulse duration  ) 0+] 926& P9506  =WKMF5WKMF            959   6LQJOHSXOVH        ( DocID027332 Rev 1 W3V ( ( ( ( ( 3/8 8 Characteristics STPSC12C065-Y Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) ( ,)60$ Figure 8. Total capacitive charges versus reverse voltage applied (typical values)  4&MQ&  7  ƒ& D   7  ƒ& D (    ( ( 4/8 WSV ( ( ( 959   DocID027332 Rev 1         STPSC12C065-Y 2 Package information Package information • Epoxy meets UL94, V0 • Recommended torque value (TO-220AC): 0.55 N·m • Maximum torque value: 0.7 N·m for TO-220AC • Cooling method: conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 9. TO-220AC dimension definitions A H2 ØI C L5 L7 L6 L2 F1 D L9 L4 F M E G DocID027332 Rev 1 5/8 8 Package information STPSC12C065-Y Table 6. TO-220AC dimension values Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. I 6/8 Inches 2.6 typ. 3.75 0.102 typ. 3.85 DocID027332 Rev 1 0.147 0.151 STPSC12C065-Y 3 Ordering information Ordering information Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPSC12C065DY PSC12C065DY TO-220AC 1.86 g 50 Tube Revision history Table 8. Document revision history Date Revision 13-Jan-2015 1 Changes First issue. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 8/8 DocID027332 Rev 1