STPSC12H065D

STPSC12H065 650 V power Schottky silicon carbide diode Datasheet - production data $ Description . . . 72$& Features • No or negligible reverse recovery $ The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. • Switching behavior independent of temperature Table 1. Device summary • Dedicated to PFC applications • High forward surge capability July 2015 This is information on a product in full production. DocID024086 Rev 2 Symbol Value IF(AV) 12 A VRRM 650 V Tj (max) 175 °C 1/8 www.st.com Characteristics 1 STPSC12H065 Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) (1) , δ = 0.5 Value Unit 650 V 22 A Average forward current Tc = 130 °C 12 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 100 90 400 A IFRM Repetitive peak forward current Tc = 130 °C(1), Tj = 150 °C, δ = 0.1 50 A Tstg Storage temperature range -55 to +175 °C -40 to +175 °C Tj Operating junction temperature (2) 1. Value based on Rth(j-c) max. 2. dPtot --------------dTj 1 - condition to avoid thermal runaway for a diode on its own heatsink < ------------------------Rth ( j – a ) Table 3. Thermal resistance Value Symbol Rth(j-c) Parameter Unit Junction to case Typ. Max. 1.00 1.4 °C/W Table 4. Static electrical characteristics Symbol Parameter Tests conditions IR (1) Reverse leakage current VF (2) Forward voltage drop Tj = 25 °C Min. Typ. Max. - 10 120 - 100 500 - 1.56 1.75 - 1.98 2.5 VR = VRRM Tj = 150 °C Tj = 25 °C IF = 12 A Tj = 150 °C Unit µA V 1. tp = 10 ms, δ < 2% 2. tp = 500 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.096 x IF2(RMS) Table 5. Dynamic electrical characteristics Symbol Qcj (1) Cj Parameter Test conditions Total capacitive charge VR = 400 V, Total capacitance Unit 36 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 600 VR = 400 V, Tc = 25 °C, F = 1 MHz 60 1. Most accurate value for the capacitive charge: 2/8 Typ. VOUT Qcj = ∫0 cj(vR).dvR DocID024086 Rev 2 pF STPSC12H065 Characteristics Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level) current (typical values, high level) IFM(A) 24 120 IFM(A) Pulse test : tp=500µs Pulse test : tp=500µs 100 20 Ta=25 °C 16 80 Ta=150 °C Ta=100 °C 12 Ta=25 °C 60 Ta=175 °C Ta=100 °C 40 8 Ta=150 °C 20 4 V FM 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 IR(µA) 2 3 4 5 6 7 8 IM(A) T δ = 0.1 Tj=175 °C 60 tp δ = tp/T Tj=150 °C 1.E+01 40 δ = 0.3 δ = 0.5 1.E+00 20 Tj=25 °C 1.E-01 δ = 1.0 V (V) δ = 0.7 R 50 100 150 200 250 300 350 400 450 500 550 600 650 Cj(pF) F=1 MHz VOSC=30 mVRMS Tj=25 °C 25 50 75 100 125 150 175 Figure 6. Relative variation of thermal impedance junction to case versus pulse duration 1.0 500 T (°C) C 0 0 Figure 5. Junction capacitance versus reverse voltage applied (typical values ) 600 1 Figure 4. Peak forward current versus case temperature 80 1.E+02 1.E-02 0 (V) FM 0 Figure 3. Reverse leakage current versus reverse voltage applied (typical values) 1.E+03 V Ta=175 °C (V) Zth(j-c)/Rth(j-c) 0.9 0.8 0.7 400 0.6 300 0.5 0.4 200 0.3 0.2 100 0.1 VR(V) 0 0.1 1.0 10.0 100.0 1000.0 Single pulse 0.0 1.E-05 DocID024086 Rev 2 1.E-04 tp (s) 1.E-03 1.E-02 1.E-01 1.E+00 3/8 8 Characteristics STPSC12H065 Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+03 IFSM(A) Figure 8. Total capacitive charges versus reverse voltage applied (typical values) 40 Ta=25 °C QCj(nC) 32 Ta=125 °C 24 1.E+02 16 8 1.E+01 1.E-05 4/8 tp(s) 1.E-04 1.E-03 1.E-02 VR(V) 0 0 50 DocID024086 Rev 2 100 150 200 250 300 350 400 STPSC12H065 2 Package information Package information • Epoxy meets UL94, V0 • Recommended torque value: 0.55 N·m • Maximum torque value: 0.7 N·m • Cooling method: conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at:www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220AC package information Figure 9. TO-220AC package outline A H2 ØI C L5 L7 L6 L2 F1 D L9 L4 F M E G DocID024086 Rev 2 5/8 8 Package information STPSC12H065 Table 6. TO-220AC package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. I 6/8 Inches 2.6 typ. 3.75 0.102 typ. 3.85 DocID024086 Rev 2 0.147 0.151 STPSC12H065 3 Ordering information Ordering information Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPSC12H065D PSC12H065D TO-220AC 1.86 g 50 Tube Revision history Table 8. Document revision history Date Revision Changes 27-Nov-2014 1 First issue. 13-Jul-2015 2 Removed D²PAK package information and updated Table 7. DocID024086 Rev 2 7/8 8 STPSC12H065 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 8/8 DocID024086 Rev 2