STPSC12H065DY

STPSC12H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data A Description K The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. K A K Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. TO-220AC Features        AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability PPAP capable ECOPACK® 2 compliant component October 2016 Table 1: Device summary DocID026617 Rev 4 This is information on a product in full production. Symbol Value IF(AV) 12 A VRRM 650 V Tj (max.) 175 °C 1/9 www.st.com Characteristics 1 STPSC12H065-Y Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current 22 A IF(AV) Average forward current TC = 130 °C(1), δ = 0.5 12 A IFRM Repetitive peak forward current Tc =110 °C, Tj = 150 °C, δ = 0.1 50 A tp = 10 ms sinusoidal, Tc = 25 °C 100 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 125 °C 90 tp = 10 µs square, Tc = 25 °C 400 Tstg Storage temperature range Tj Operating junction temperature(2) A -55 to +175 °C -40 to +175 °C Notes: (1)Value (2)(dP based on Rth(j-c) max. tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Value Symbol Parameter Max. 1.00 1.4 °C/W Min. Typ. Max. Unit - 10 120 - 100 500 - 1.56 1.75 - 1.98 2.5 Junction to case Rth(j-c) Unit Typ. Table 4: Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 12 A Notes: (1)Pulse test: tp = 10 ms, δ < 2% (2)Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) + 0.096 x IF2(RMS) 2/9 DocID026617 Rev 4 µA V STPSC12H065-Y Characteristics Table 5: Dynamic electrical characteristics Symbol QCj(1) Cj Parameter Test conditions Total capacitive charge Total capacitance Typ. Unit VR = 400 V 36 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 600 VR = 400 V, Tc = 25 °C, F = 1 MHz 60 pF Notes: (1)Most 𝑉𝑂𝑈𝑇 accurate value for the capacitive charge: 𝑄𝑐𝑗 = ∫0 DocID026617 Rev 4 𝐶𝐽 (𝑉𝑅 ) • 𝑑𝑉𝑅 3/9 Characteristics 1.1 STPSC12H065-Y Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values, low level) 24 IFM(A) Figure 2: Forward voltage drop versus forward current (typical values, high level) 120 IFM(A) Pulse test : tp = 500 µs Pulse test : tp = 500 µs 100 20 Ta = 25 °C 16 80 Ta= 150 °C Ta = 100 °C Ta = 25 °C 12 60 Ta = 175 °C Ta = 100 °C 8 40 4 20 V 0 0.0 FM (V) V Ta=175 °C (V) FM 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 6 7 8 Figure 4: Peak forward current versus case temperature Figure 3: Reverse leakage current versus reverse voltage applied (typical values) 1.E+03 Ta = 150 °C IR (µA) 80 IM(A) T δ = 0.1 Tj = 175 °C 1.E+02 δ = tp/T 60 tp Tj = 150 °C 1.E+01 40 1.E+00 δ = 0.5 20 Tj = 25 °C 1.E-01 δ = 1.0 V (V) R 1.E-02 0 4/9 δ = 0.3 50 100 150 200 250 300 350 400 450 500 550 600 650 δ = 0.7 T (°C) C 0 0 DocID026617 Rev 4 25 50 75 100 125 150 175 STPSC12H065-Y Characteristics Figure 5: Junction capacitance versus reverse voltage applied (typical values) 600 Figure 6: Relative variation of thermal impedance junction to case versus pulse duration C j(pF) 1.0 F = 1 MHz VOSC = 30 mVRM S Tj = 25 °C 500 Zth(j-c)/Rth(j-c) 0.9 0.8 0.7 400 0.6 300 0.5 0.4 200 0.3 0.2 100 0.1 VR(V) 0 0.1 1.0 10.0 100.0 1000.0 Figure 7: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 40 Ta = 25 °C t p (s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8: Total capacitive charges versus reverse voltage applied (typical values) IFSM(A) 1.E+03 Single pulse 0.0 1.E-05 QCj(nC) 32 Ta = 125 °C 24 1.E+02 16 8 t p(s) 1.E+01 1.E-05 1.E-04 1.E-03 VR(V) 0 1.E-02 DocID026617 Rev 4 0 50 100 150 200 250 300 350 5/9 400 Package information 2 STPSC12H065-Y Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     2.1 Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.7 N·m TO-220AC package information Figure 9: TO-220AC package outline 6/9 DocID026617 Rev 4 Package information STPSC12H065-Y Table 6: TO-220AC package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam 2.6 typ. 3.75 0.102 typ. 3.85 DocID026617 Rev 4 0.147 0.151 7/9 Ordering information 3 STPSC12H065-Y Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STPSC12H065DY PSC12H065DY TO-220AC 1.86 g 50 Tube Revision history Table 8: Document revision history 8/9 Date Revision Changes 04-Sep-2014 1 First issue. 19-Sep-2014 2 Updated Table 7. 12-Mar-2015 3 Added AEC-Q101 qualified. 24-Oct-2016 4 Updated Table 7: "Ordering information". DocID026617 Rev 4 STPSC12H065-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID026617 Rev 4 9/9