STPSC15H12DY

STPSC15H12-Y Automotive grade 1200 V power Schottky silicon carbide diode Datasheet - production data A Description K The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. K A K TO-220AC Features       AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery PPAP capable Operating Tj from -40 °C to 175 °C January 2017 Table 1: Device summary DocID029723 Rev 1 This is information on a product in full production. Symbol Value IF(AV) 15 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V 1/8 www.st.com Characteristics 1 STPSC15H12-Y Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current Value Unit 1200 V 38 A IF(AV) Average forward current TC = 155 °C, DC current 15 A IFRM Repetitive peak forward current TC = 155 °C, Tj = 175 °C, δ = 0.1 58 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal tp = 10 µs square Tstg Tj TC = 25 °C 105 TC = 150 °C 90 TC = 25 °C 630 A Storage temperature range -65 to +175 °C Operating junction temperature -40 to +175 °C Table 3: Thermal parameters Symbol Parameter Typ. value Max. value Unit 0.45 0.6 °C/W Junction to case Rth(j-c) Table 4: Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Min. Typ. Max. - 7.5 90 - 45 600 - 1.35 1.50 - 1.75 2.25 VR = VRRM Tj = 150 °C Tj = 25 °C IF = 15 A Tj = 150 °C Unit µA V Notes: (1)Pulse test: tp = 10 ms, δ < 2% (2)Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses use, the following equation: P = 1.09 x IF(AV) + 0.0775 x IF2(RMS) Table 5: Dynamic electrical characteristics Symbol Parameter QCj(1) Total capacitive charge Cj Total capacitance Test conditions Min. Typ. Max. Unit VR = 800 V - 94 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 1200 - VR = 800 V, Tc = 25 °C, F = 1 MHz - 78 - Notes: (1)Most 2/8 𝑉 accurate value for the capacitive charge: 𝑄𝑐𝑗 (𝑉𝑅 ) = ∫0 𝑅 𝐶𝑗 (𝑉)𝑑𝑉 DocID029723 Rev 1 pF STPSC15H12-Y 1.1 Characteristics Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values) Figure 2: Reverse leakage current versus reverse voltage applied (typical values) IF(A) 30 IR(µA) 1.E+02 Pulse test : tp = 500 µs 25 Ta = -40 °C 1.E+01 Ta = 25 °C 1.E+00 Tj = 150 °C 20 15 Ta = 150 °C Tj = 25 °C 1.E-01 10 1.E-02 5 VF(V) VR(V) 0 1.E-03 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 200 300 400 500 600 700 800 900 1000 1100 1200 Figure 4: Junction capacitance versus reverse voltage applied (typical values) Figure 3: Peak forward current versus case temperature 140 0 IM(A) Cj(pF) 1200 T F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C δ = 0.1 120 δ = tp/T 1000 tp 100 800 80 δ = 0.3 600 δ = 0.5 60 400 40 δ = 0.7 δ= 1 20 200 VR (V) Tc (°C) 0 0 0 25 50 75 100 125 150 175 0.1 Zth(j-c)/Rth(j-c) 10.0 100.0 1000.0 10000.0 Figure 6: Non- repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration 1.0 1.0 1.E+03 IFSM(A) 0.9 Ta = 25 °C 0.8 0.7 Ta = 150 °C 0.6 0.5 1.E+02 0.4 0.3 0.2 Single pulse 0.1 tp (s) tp(s) 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 DocID029723 Rev 1 1.E-04 1.E-03 1.E-02 3/8 Characteristics STPSC15H12-Y Figure 7: Total capacitive charges versus reverse voltage applied (typical values) 100 Qcj(nC) 80 60 40 20 VR(V) 0 0 4/8 100 200 300 400 DocID029723 Rev 1 500 600 700 800 STPSC15H12-Y 2 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     2.1 Cooling method: by conduction (C) Epoxy meets UL 94,V0 Recommended torque value: 0.55 N·m Maximum torque value: 0.7 N·m TO-220AC package information Figure 8: TO-220AC package outline DocID029723 Rev 1 5/8 Package information STPSC15H12-Y Table 6: TO-220AC package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam 6/8 Inches 2.6 typ. 3.75 0.102 typ. 3.85 DocID029723 Rev 1 0.147 0.151 STPSC15H12-Y 3 Ordering information Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STPSC15H12DY STPSC15H12DY TO-220AC 1.86 g 50 Tube Revision history Table 8: Document revision history Date Revision 05-Jan-2017 1 Changes First issue DocID029723 Rev 1 7/8 STPSC15H12-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 8/8 DocID029723 Rev 1