STPSC16H065CT

STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description $ . $ $ $ . 72$% The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature. Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value  No or negligible reverse recovery IF(AV) 2x8A  Switching behavior independent of temperature VRRM 650 V Tj (max) 175 °C Features  High forward surge capability  ECOPACK®2 compliant component December 2015 This is information on a product in full production. DocID024810 Rev 5 1/8 www.st.com Characteristics 1 STPSC16H065C Characteristics Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Tc = 140 °C(1), DC Value Unit 650 V 22 A Per diode 8 A Per device 16 A IF(AV) Average forward current IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 75 69 420 A IFRM Repetitive peak forward current Tc = 140 °C(1), Tj = 175 °C,  = 0.1 34 A Tstg Storage temperature range -65 to +175 °C -40 to +175 °C Operating junction Tj (2) Tc = 135 °C , DC temperature(3) 1. Value based on Rth(j-c) max (per diode) 2. Value based on Rth(j-c) max (per device) dPtot --------------dTj 3. 1 - condition to avoid thermal runaway for a diode on its own heatsink  ------------------------Rth  j – a  Table 3. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Typ. Max. Per diode 1.3 1.6 Per device 0.8 0.95 - 0.3 Unit °C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 8A Min. Typ. Max. - 7 80 - 65 335 - 1.56 1.75 - 1.98 2.5 µA V 1. tp = 10 ms,  < 2% 2. tp = 500 µs,  < 2% To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.144 x IF2(RMS) 2/8 DocID024810 Rev 5 Unit STPSC16H065C Characteristics Table 5. Dynamic electrical characteristics (perdiode) Symbol Parameter Qcj(1) Test conditions Total capacitive charge Cj Total capacitance Typ. Unit VR = 400 V 23.5 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 414 VR = 400 V, Tc = 25 °C, F = 1 MHz 38 pF 9287 1. Most accurate value for the capacitive charge: ³ 4FM FMY5GY5  Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level, per diode) current (typical values, high level, per diode)  ,)0$ ,)0$  3XOVHWHVWWS —V  3XOVHWHVWWS —V  7D ƒ&    7D   ƒ& 7D  ƒ&   7D ƒ&  7D  ƒ&  7D ƒ&   7D ƒ&    9)09   9)09 7D ƒ&         Figure 3. Reverse leakage current versus reverse voltage applied (typical values, per diode)  Figure 4. Peak forward current versus case temperature (per diode) ,0$ ,5—$  ( 7 Ƚ   7M ƒ& ( ( Ƚ
 WS7  WS  7M ƒ& Ƚ   Ƚ  (   ( Ƚ  7M ƒ& 959 ( Ƚ   7&ƒ&                 DocID024810 Rev 5        3/8 8 Characteristics STPSC16H065C Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode Figure 6. [Relative variation of thermal impedance junction to case versus pulse duration &MS) =WKMF5WKMF    ) 0+] 926& P9506   7M ƒ&                   6LQJOHSXOVH  959   Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode)  ( W S V ( ( ( ( ( Figure 8. Total capacitive charges versus reverse voltage applied (typical values, per diode) ,)60$ 4FM Q& (   7D ƒ&   7D ƒ& (    95 9 W S V ( ( 4/8  ( ( (   DocID024810 Rev 5        STPSC16H065C 2 Package information Package information  Epoxy meets UL94, V0  Cooling method: conduction (C)  Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at:www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220AB package information Figure 9. TO-220AB package outline $ ( ‫܍‬3 5HVLQJDWH PPPD[ SURWUXVLRQ ) 4 + ' ' / / E - / / E H H 5HVLQJDWH PPPD[ SURWUXVLRQ F 5HVLQJDWHSRVLWLRQDFFHSWHGLQHDFKRIWKHWZR SRVLWLRQVKRZQDVZHOODVWKHV\PPHWULFDORSSRVLWHV DocID024810 Rev 5 5/8 8 Package information STPSC16H065C Table 6. TO-220AB package mechanical data Dimensions Ref. Inches(1) Millimeters Typ. Min. Max. A 4.40 b Min. Max. 4.60 0.17 0.18 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.60 0.62 D1 1.27 Typ. 0.05 E 10 10.40 0.39 0.41 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.19 0.20 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.24 0.26 J1 2.40 2.72 0.094 0.107 L 13 14 0.51 0.55 L1 3.50 3.93 0.137 0.154 L20 16.40 0.64 L30 28.90 1.13 P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 1. Values in inches are converted from mm and rounded to 4 decimal digits. 6/8 DocID024810 Rev 5 STPSC16H065C 3 Ordering information Ordering information Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPSC16H065CT STPSC16H065CT TO-220AB 1.86 g 50 Tube Revision history Table 8. Document revision history Date Revision Changes 24-Jun-2013 1 First issue. 07-Nov-2013 2 Updated Figure 1 and Figure 2. 20-Mar-2014 3 Updated Table 3. 02-Nov-2015 4 Updated cover page and Table 7. Format updated to current standard. 07-Dec-2015 5 Updated Table 7. DocID024810 Rev 5 7/8 8 STPSC16H065C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 8/8 DocID024810 Rev 5