STPSC20H065CTY

STPSC20H065C-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 (1) K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CTY A2 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. K A1 Table 1. Device summary TO-247 STPSC20H065CWY Features Symbol Value IF(AV) 2 x 10 A VRRM 650 V Tj (max) 175 °C • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified • ECOPACK®2 compliant component • PPAP capable September 2014 This is information on a product in full production. DocID026619 Rev 2 1/9 www.st.com Characteristics 1 STPSC20H065C-Y Characteristics Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current Tc = 135 °C (1) , DC, per diode Value Unit 650 V 22 A 10 Tc = 125 °C(2), DC, per device 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 90 80 470 A IFRM Repetitive peak forward current Tc = 135 °C(1), Tj = 175 °C, δ = 0.1 41 A Tstg Storage temperature range -55 to +175 °C -40 to +175 °C Operating junction Tj temperature(3) 1. Value based on Rth(j-c) max (per diode) 2. Value based on Rth(j-c) max (per device) dPtot --------------dTj 3. 1 - condition to avoid thermal runaway for a diode on its own heatsink < ------------------------Rth (j – a ) Table 3. Thermal resistance Value Symbol Parameter Per diode Rth(j-c) Junction to case per diode Total Rth(c) Unit TO-247 TO-220AB TO-247 TO-220AB Typ. Max. 1.25 1.5 0.83 0.95 Coupling °C/W 0.4 When the two diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x R th(c) Table 4. Static electrical characteristics per diode Symbol Parameter IR (1) Reverse leakage current VF(2) Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 10 A Min. Typ. Max. - 9 100 - 85 425 - 1.56 1.75 - 1.98 2.5 µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.115 x IF2(RMS) 2/9 DocID026619 Rev 2 Unit STPSC20H065C-Y Characteristics Table 5. Dynamic electrical characteristics per diode Symbol Parameter Qcj(1) Test conditions Total capacitive charge Total capacitance Cj Typ. Unit VR = 400 V 28.5 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 480 VR = 400 V, Tc = 25 °C, F = 1 MHz 48 1. Most accurate value for the capacitive charge: pF VOUT Qcj = ∫0 cj(vR).dvR Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values per diode, low level) current (typical values per diode, high level) 20 IFM(A) 18 IFM(A) 100 Pulse test : tp=500µs 16 80 Ta=25 °C 14 12 Pulse test : tp=500µs 90 70 Ta=150 °C Ta=100 °C 10 60 8 40 6 30 4 20 2 Ta=25 °C 50 Ta=175 °C Ta=100 °C Ta=150 °C 10 VFM(V) 0 Ta=175 °C VFM(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3. Reverse leakage current versus reverse voltage applied (typical values per diode) 1.E+03 IR(µA) 0 1 2 3 4 5 6 I M (A) T δ = 0.1 70 Tj=175 °C δ=tp/T 60 tp 50 Tj=150 °C 1.E+01 8 Figure 4. Peak forward current versus case temperature (per diode) 80 1.E+02 7 δ = 0.3 40 1.E+00 δ = 0.5 30 20 1.E-01 Tj=25 °C δ=1 VR(V) 1.E-02 δ = 0.7 10 TC(°C) 0 0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 DocID026619 Rev 2 25 50 75 100 125 150 175 3/9 9 Characteristics STPSC20H065C-Y Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode) 500 Cj (pF) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration per diode Zth(j-c)/Rth(j-c) 1.0 F=1 MHz VOSC=30 mVRMS Tj=25 °C 450 400 0.9 0.8 350 0.7 300 0.6 250 0.5 200 0.4 150 0.3 100 0.2 50 0.1 10.0 0.0 1.E-05 0 0.1 1.0 100.0 1000.0 Figure 7. Non-repetitive peak surge forward current versus pulse duration per diode (sinusoidal waveform) 1.E+03 Single pulse VR(V) IFSM (A) tp(s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8. Total capacitive charges versus reverse voltage applied (typical values per diode) 32 Qcj (nC) 28 Ta=25 °C 24 20 Ta=125 °C 16 1.E+02 12 8 4 VR (V) tp(s) 1.E+01 1.E-05 4/9 0 1.E-04 1.E-03 1.E-02 0 DocID026619 Rev 2 50 100 150 200 250 300 350 400 STPSC20H065C-Y 2 Package information Package information • Epoxy meets UL94, V0 • Cooling method: conduction (C) • Recommended torque value: – TO-220AB 0.4 to 0.6 N·m, – TO-247 0.55 N·m (1.0 N·m maximum) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 9. TO-220AB dimension definitions A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G DocID026619 Rev 2 5/9 9 Package information STPSC20H065C-Y Table 6. TO-220AB dimension values Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. 6/9 Inches 2.6 typ. 3.75 0.102 typ. 3.85 DocID026619 Rev 2 0.147 0.151 STPSC20H065C-Y Package information Figure 10. TO-247 dimension definitions Heat-sink plane A E ∅P S ∅R D L2 L1 b1 L b2 1 2 3 b c 3 2 1 BACK VIEW A1 e Table 7. TO-247 dimension values Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D(1) 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 5.45 18.50 typ. 0.215 0.220 0.728 typ. ∅P(2) 3.55 3.65 0.139 0.143 ∅R 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 5.50 0.216 0.224 1. Dimension D plus gate protrusion does not exceed 20.5 mm 2. Resin thickness around the mounting hole is not less than 0.9 mm DocID026619 Rev 2 7/9 9 Ordering information 3 STPSC20H065C-Y Ordering information Table 8. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPSC20H065CTY PSC20H065CTY TO-220AB 1.86 g 50 Tube STPSC20H065CWY PSC20H065CWY TO-247 4.43 g 30 Tube Revision history Table 9. Document revision history 8/9 Date Revision Changes 26-Jun-2014 1 First issue. 19-Sep-2014 2 Updated Table 8. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID026619 Rev 2 9/9 9