STPSC20H12CWY

STPSC20H12CWY Datasheet 20 A 1200 V power Schottky silicon carbide diode Features • • • • • • AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Robust high-voltage periphery PPAP capable Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant Applications • • • • OBC (On Board Battery chargers) PHEV - EV charging stations Resonant LLC topology PFC functions (Power Factor Corrector) Description The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Product status link STPSC20H12CWY Product summary IF(AV) 2 x 10 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product label DS12793 - Rev 2 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC20H12CWY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 °C , unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current IF(AV) Average forward current Tc = 150 °C, DC current IFRM Repetitive peak forward current tp = 10 ms sinusoidal IFSM Surge non repetitive forward current tp = 10 ms sinusoidal tp = 10 µs square Tstg Tj Value Unit 1200 V 25 A Per diode 10 Per device 20 Tc =150 °C, Tj = 175 °C, δ = 0.1 42 Tc = 25 °C 71 Tc = 150 °C 60 Tc = 25 °C 420 A A A Storage temperature range -55 to +175 °C Operating junction temperature (1) -40 to +175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Rth(j-c) Parameter Junction to case Typ. Max. Per diode 0.70 0.95 Per device 0.35 0.48 Unit °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 10 A Min. Typ. Max. - 5 60 - 30 400 - 1.35 1.50 - 1.75 2.25 Unit µA V 1. Pulse test: tp = 10 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.03 x IF(AV) + 0.122 x IF 2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS12793 - Rev 2 page 2/10 STPSC20H12CWY Characteristics Table 4. Dynamic electrical characteristics (per diode) Symbol QCj (1) Cj 1. DS12793 - Rev 2 Parameter Total capacitive charge Total capacitance Test conditions Min. Typ. Max. Unit VR = 800 V - 57 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 725 - VR = 800 V, Tc = 25 °C, F = 1 MHz - 47 - pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 3/10 STPSC20H12CWY Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values, per diode) Figure 2. Reverse leakage current versus reverse voltage applied (typical values, per diode) IF(A) IR(µA) 20 1.E+02 Pulse test : tp = 500 µs Ta = -40 °C 15 1.E+01 Ta = 25 °C Tj = 150 °C 1.E+00 10 Tj = 25 °C 1.E-01 Ta = 150 °C 5 1.E-02 VF(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 3. Peak forward current versus case temperature (per diode) 100 1.E-03 0 VR(V) 100 200 300 400 500 600 700 800 900 1000 1100 1200 Figure 4. Junction capacitance versus reverse voltage applied (typical values, per diode) Cj(pF) IM(A) 700 T δ = 0.1 F=1 MHz VOSC=30 mVRMS Tj=25 °C 600 80 δ = tp/T tp 500 60 400 δ = 0.3 40 δ = 0.5 300 200 20 δ=1 δ = 0.7 100 TC(°C) 0 0 25 50 75 100 125 150 175 0.1 DS12793 - Rev 2 VR(V) 0 1.0 10.0 100.0 1000.0 10000.0 page 4/10 STPSC20H12CWY Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) Zth(j-c) /Rth(j-c) 1.E+03 IFSM(A) 1.0 0.9 Ta=25 °C 0.8 0.7 0.6 Ta=150 °C 1.E+02 0.5 0.4 0.3 0.2 0.1 Single pulse t p (s) t p (s) 1.E+01 0.0 1.E-05 1.E-04 1.E-03 1.E-01 1.E-02 1.E+00 1.E-05 1.E-04 1.E-03 1.E-02 Figure 7. Total capacitive charges versus reverse voltage applied (typical values, per diode) QCj(nC) 60 50 40 30 20 10 VR(V) 0 0 DS12793 - Rev 2 100 200 300 400 500 600 700 800 page 5/10 STPSC20H12CWY Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-247 package information • • • • Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 N·m Maximum torque value: 1.0 N·m Figure 8. TO-247 package outline DS12793 - Rev 2 page 6/10 STPSC20H12CWY TO-247 package information Table 5. TO-247 package mechanical data Dimensions Millimeters Ref. Inches (for reference only) Min. Typ. Max. Min. Typ. Max. A 4.85 5.00 5.15 0.191 0.197 0.203 A1 2.20 2.60 0.086 A2 1.90 2.10 0.075 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D 19.85 20.00 20.15 0.781 0.787 0.793 E 15.45 15.60 15.75 0.608 0.614 0.620 E3 1.45 1.65 0.057 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 18.30 18.70 0.720 ØP 3.55 3.65 0.139 0.143 Q 5.65 5.95 0.222 0.234 S 5.30 5.70 0.209 DS12793 - Rev 2 2.00 5.45 18.50 5.50 0.102 0.078 0.083 0.065 0.215 0.728 0.216 0.220 0.737 0.224 page 7/10 STPSC20H12CWY Ordering information 3 Ordering information Table 6. Ordering information DS12793 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STPSC20H12CWY STPSC20H12CWY TO-247 5.38 g 30 Tube page 8/10 STPSC20H12CWY Revision history Table 7. Document revision history DS12793 - Rev 2 Date Revision Changes 12-Nov-2018 1 First issue. 24-Feb-2021 2 Updated Table 5 and Figure 8. page 9/10 STPSC20H12CWY IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. 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