STPSC20H12DY

STPSC20H12-Y Datasheet Automotive 1200 V, 20 A, silicon carbide power Schottky diode A Features K K K K A A NC K D²PAK TO-220AC K A A • • • • • • AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery PPAP capable Operating Tj from -40 °C to 175 °C • • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK compliant NC D²PAK HV Product label Applications • On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Product status link STPSC20H12-Y Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Product summary IF(AV) 20 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V DS11830 - Rev 4 - May 2019 For further information contact your local STMicroelectronics sales office. www.st.com STPSC20H12-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current Value Unit 1200 V 38 A IF(AV) Average forward current Tc = 155 °C, DC current 20 A IFRM Repetitive peak forward current Tc =155 °C, Tj = 175 °C, δ = 0.1 78 A tp = 10 ms sinusoidal, Tc = 25 °C 140 tp = 10 ms sinusoidal, Tc = 150 °C 120 tp = 10 µs square, Tc = 25 °C 700 IFSM Surge non repetitive forward current Tstg Tj A Storage temperature range -55 to +175 °C Operating junction temperature(1) -40 to +175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Rth(j-c) Value Parameter Symbol Junction to case Typ. Max. 0.30 0.45 Unit °C/W Table 3. Static electrical characteristics Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 20 A Min. Typ. Max. - 10 120 - 60 800 - 1.35 1.50 - 1.75 2.25 Unit µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.07 x IF(AV) + 0.059 x IF 2(RMS) Table 4. Dynamic electrical characteristics Symbol QCj (1) Cj 1. DS11830 - Rev 4 Parameter Total capacitive charge Total capacitance Test conditions Min. Typ. Max. Unit VR = 800 V - 129 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 1650 - VR = 800 V, Tc = 25 °C, F = 1 MHz - 110 - pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 2/14 STPSC20H12-Y Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values) 40 IF(A) Figure 2. Reverse leakage current versus reverse voltage applied (typical values) 1.E+02 IR(µA) Pulse test : tp = 500 µs 35 Ta = -40 °C 1.E+01 30 Tj = 150 °C 25 Ta = 25 °C 1.E+00 Ta = 150 °C Tj = 25 °C 20 1.E-01 15 10 1.E-02 5 VR (V) VF(V) 1.E-03 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 3. Peak forward current versus case temperature 140 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 Figure 4. Junction capacitance versus reverse voltage applied (typical values) IM(A) T δ = 0.1 120 δ = tp/T tp 1800 Cj(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 1600 100 1400 80 1200 δ = 0.3 60 1000 δ = 0.5 800 40 600 δ= 1 20 δ = 0.7 400 200 Tc (°C) 0 VR(V) 0 0 DS11830 - Rev 4 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000 page 3/14 STPSC20H12-Y Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c)/Rth(j-c) Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+03 IFSM(A) 0.9 0.8 Ta = 25 °C 0.7 0.6 0.5 0.4 Ta = 150 °C 0.3 0.2 Single pulse 0.1 tp (s) t p (s) 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 7. Total capacitive charges versus reverse voltage applied (typical values) 140 1.E+02 1.E-05 1.E-04 1.E-03 1.E-02 Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 70 μm) Qcj(nC) Rth(j-a) (°C/W) 60 D²PAK / D²PAK HV 120 Epoxy printed board FR4, copper thickness = 70 µm 50 100 80 40 60 30 40 20 20 VR (V) 10 SCu (cm²) 0 0 100 200 300 400 500 600 700 800 0 0 DS11830 - Rev 4 5 10 15 20 25 30 35 40 page 4/14 STPSC20H12-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-220AC package information • • • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.70 N·m Figure 9. TO-220AC package outline A H2 ØI C L5 L7 L6 L2 F1 D L9 L4 F M E G DS11830 - Rev 4 page 5/14 STPSC20H12-Y TO-220AC package information Table 5. TO-220AC package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M ØI DS11830 - Rev 4 Inches 2.6 typ. 3.75 0.102 typ. 3.85 0.147 0.151 page 6/14 STPSC20H12-Y D²PAK package information 2.2 D²PAK package information • • Epoxy meets UL94, V0. Cooling method: by conduction (C) Figure 10. D²PAK package outline Table 6. D²PAK package mechanical data Dimensions Ref. Millimeters Min. DS11830 - Rev 4 Typ. Inches Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 7.75 8.00 0.295 0.305 0.315 D2 1.10 1.30 1.50 0.043 0.051 0.060 E 10 10.40 0.394 0.409 page 7/14 STPSC20H12-Y D²PAK package information Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. E1 8.30 8.50 8.70 0.326 0.335 0.343 E2 6.85 7.05 7.25 0.266 0.278 0.282 e 2.54 0.100 e1 4.88 5.28 0.190 0.205 H 15 15.85 0.591 0.624 J1 2.49 2.69 0.097 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.049 0.055 L2 1.30 1.75 0.050 0.069 R V2 0.4 0° 0.015 8° 0° 8° Figure 11. D²PAK recommended footprint (dimensions are in mm) Footprint DS11830 - Rev 4 page 8/14 STPSC20H12-Y D²PAK high voltage package information 2.3 D²PAK high voltage package information Figure 12. D²PAK high voltage package outline A H C L1 L R L4 R M L2 0.25 gauge plane F (x2) E e H1 L3 A1 V DS11830 - Rev 4 page 9/14 STPSC20H12-Y D²PAK high voltage package information Table 7. D²PAK high voltage package mechanical data Ref. Dimensions Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° Figure 13. D²PAK High Voltage footprint in mm 10,58 7,46 15,95 5,10 3,40 1,20 5,08 DS11830 - Rev 4 page 10/14 STPSC20H12-Y D²PAK high voltage package information 2.3.1 Creepage distance between Anode and Cathode Table 8. Creepage distance between anode and cathode Symbol Note: Parameter CdA-K1 Minimum creepage distance between A and K1 (with top coating) CdA-K2 Minimum creepage distance between A and K2 (without top coating) Value D²PAK HV 5.38 3.48 Unit mm D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1) Figure 14. Creepage with top coating Figure 15. Creepage without top coating DS11830 - Rev 4 page 11/14 STPSC20H12-Y Ordering information 3 Ordering information Table 9. Ordering information DS11830 - Rev 4 Order code Marking Package Weight Base qty. Delivery mode STPSC20H12DY STPSC20H12DY TO-220AC 1.86 g 50 Tube STPSC20H12GY-TR STPSC20H12GY D²PAK 1.48 g 1000 Tape and reel STPSC20H12G2Y-TR SC20H12G2Y D²PAK HV 1.48 g 1000 Tape and reel page 12/14 STPSC20H12-Y Revision history Table 10. Document revision history DS11830 - Rev 4 Date Revision Changes 05-Jan-2017 1 Initial release. 23-Jan-2017 2 Added D²PAK package. 18-Dec-2017 3 Updated cover image. 02-May-2019 4 Added D²PAK HV package. page 13/14 STPSC20H12-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11830 - Rev 4 page 14/14